Perfect blackbody radiation from a graphene nanostructure with application to high-temperature spectral emissivity measurements.

We report the successful fabrication of a novel type of blackbody material based on a graphene nanostructure. We demonstrate that the graphene nanostructure not only shows a low reflectance comparable to that of a carbon nanotube array but also shows an extremely high heat resistance at temperatures greater than 2500 K. The graphene nanostructure, which has an emissivity higher than 0.99 over a wide range of wavelengths, behaves as a standard blackbody material; therefore, the radiation spectrum and the temperature can be precisely measured in a simple manner. Here, the spectral emissivities of tungsten and tantalum are experimentally obtained using this ideal blackbody material and are compared to previously reported spectra. We clearly demonstrate the existence of a temperature-independent fixed point of emissivity at a certain wavelength. Both the spectral emissivity as a function of temperature and the cross-over point in the emissivity spectrum are well described by the complex dielectric function based on the Lorentz-Drude model with the phonon-scattering effect.

Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters.

We report the successful fabrication of a compact deep ultraviolet emission device via a marriage of AlGaN quantum wells and graphene nanoneedle field electron emitters. The device demonstrated a 20-mW deep ultraviolet output power and an approximately 4% power efficiency. The performance of this device may lead toward the realization of an environmentally friendly, convenient and practical deep ultraviolet light source.

Thermal hysteresis and thickness dependence of the molecular orientation of poly(di-n-hexylsilane) in the film state.

Molecular orientation of poly(di-n-hexylsilane) adsorbed on poly(vinyl alcohol) film has been studied by making use of the stretching technique. Dichroic ratio, Rd, strongly depended on the thickness of poly(di-n-hexylsilane) thin film and the highest value ca. 19 was observed at the film thickness of 110 +/- 30 nm. The thermal hysteresis of the molecular orientation was observed in the heating-cooling cycles. By studying the fluorescence spectrum it was confirmed that a portion of the poly(di-n-hexylsilane) molecules were in transoid conformation even at 320 K, although most of poly(di-n-hexylsilane) molecules were in disordered conformation (conformation D). This poly(di-n-hexylsilane) in transoid conformation is formed in the stretching process and may play a role of crystallization nucleus to induce the whole orientation of the poly(di-n-hexylsilane) in the film state.