ABSTRACT
This article describes the design and the characterization of the ANTIGONE (ANalog To dIGital cONvErter) ASIC (Application Specific Integrated Circuit) built in AMS 0.35 m technology for low dc-current sensing. This energy-efficient ASIC was specifically designed to interface with multiple Ion-Sensitive Field-Effect Transistors (ISFETs) and detect biomarkers like pH, Na+, K+ and Ca2+ in human sweat. The ISFET-ASIC system can allow real-time noninvasive and continuous health monitoring. The ANTIGONE ASIC architecture is based on the current-to-frequency converter through the charge balancing principle. The same front-end can digitize multiple currents produced by four sweat ISFET sensors in time multiplexing. The front-end demonstrates good linearity over a dynamic range that spans from 1 pA up to 500 nA. The consumed energy per conversion is less than 1 J. The chip is programmable and works in eight different modes of operation. The system uses a standard Serial Peripheral Interface (SPI) to configure, control and read the digitally converted sensor data. The chip is controlled by a portable device over Bluetooth Low Energy (BLE) through a Microcontroller Unit (MCU). The sweat sensing system is part of a bigger wearable platform that exploits the convergence of multiparameter biosensors and environmental sensors for personalized and preventive healthcare.
Subject(s)
Biosensing Techniques , Wearable Electronic Devices , Humans , Ions , Sodium , SweatABSTRACT
In this Letter, a direct light-to-digital converter based on an MOS-PN photodetector driven by pulsed voltage is presented. The objective is to avoid any analog-to-digital or time-to-digital conversion and, thereby, to pave the way for a new generation of fully digital imaging sensors with reduced complexity, area, and power consumption. Moreover, the pulsed voltage operation allows for a significant reduction of the dark level. The concept is validated by a theoretical study and TCAD simulations. A first prototype fabricated in 0.18 µm CMOS technology is presented. The experimental results under various light conditions show that the pulsed voltage improves the light sensitivity by several orders of magnitude.
ABSTRACT
A new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation starts with an internal charge integration, followed by a positive feedback, and a sharp switching-current. The device, consisting of a deeply depleted MOS structure controlling the conduction of a forward-based PN diode, is presented and its operation explained. TCAD simulations are used to show the effects of semiconductor parameters and bias conditions. The photodetector and its detection circuit are designed and fabricated in a 0.18µm CMOS process. Measurements of this new device under different biasing and illumination conditions show highly promising properties in terms of linearity, internal gain, and noise performances.
ABSTRACT
Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
