1.
Phys Rev Lett
; 85(8): 1694-7, 2000 Aug 21.
Article
in English
| MEDLINE
| ID: mdl-10970591
ABSTRACT
Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.