Extreme Domain Wall Speeds under Ultrafast Optical Excitation.

Time-resolved ultrafast EUV magnetic scattering was used to test a recent prediction of >10 km/s domain wall speeds by optically exciting a magnetic sample with a nanoscale labyrinthine domain pattern. Ultrafast distortion of the diffraction pattern was observed at markedly different timescales compared to the magnetization quenching. The diffraction pattern distortion shows a threshold dependence with laser fluence, not seen for magnetization quenching, consistent with a picture of domain wall motion with pinning sites. Supported by simulations, we show that a speed of ≈66 km/s for highly curved domain walls can explain the experimental data. While our data agree with the prediction of extreme, nonequilibrium wall speeds locally, it differs from the details of the theory, suggesting that additional mechanisms are required to fully understand these effects.

Near-unity spin Hall ratio in Ni x Cu1-x alloys.

We report a large spin Hall effect in the 3d transition metal alloy Ni x Cu1-x for x ∈ {0.3, 0.75}, detected via the ferromagnetic resonance of a permalloy (Py = Ni80Fe20) film deposited in a bilayer with the alloy. A thickness series at x = 0.6, for which the alloy is paramagnetic at room temperature, allows us to determine the spin Hall ratio θ SH ≈ 1, spin diffusion length λs, spin mixing conductance G ⇅, and damping due to spin memory loss αSML. We compare our results with similar experiments on Py/Pt bilayers measured using the same method. Ab initio band structure calculations with disorder and spin-orbit coupling suggest an intrinsic spin Hall effect in Ni x Cu1-x alloys, although the experiments here cannot distinguish between extrinsic and intrinsic mechanisms.

Nonequilibrium quasiparticles and 2e periodicity in single-Cooper-pair transistors.

We have fabricated single-Cooper-pair transistors in which the spatial profile of the superconducting gap energy was controlled by oxygen doping. The profile dramatically affects the switching current vs gate voltage curve of the transistor, changing its period from 1e to 2e. A model based on nonequilibrium quasiparticles in the leads explains our results, including the observation that even devices with a clean 2e period are "poisoned" by small numbers of these quasiparticles.