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1.
Phys Chem Chem Phys ; 24(34): 20506-20516, 2022 Aug 31.
Article in English | MEDLINE | ID: mdl-35993759

ABSTRACT

Atomic layer deposition (ALD) was used to deposit a protective overcoating (Al2O3) on an industrially relevant Co-based Fischer-Tropsch catalyst. A trimethylaluminium/water (TMA/H2O) ALD process was used to prepare ∼0.7-2.2 nm overcoatings on an incipient wetness impregnated Co-Pt/TiO2 catalyst. A diffusion-reaction differential equation model was used to predict precursor transport and the resulting deposited overcoating surface coverage inside a catalyst particle. The model was validated against transmission electron (TEM) and scanning electron (SEM) microscopy studies. The prepared model utilised catalyst physical properties and ALD process parameters to estimate achieved overcoating thickness for 20 and 30 deposition cycles (1.36 and 2.04 nm respectively). The TEM analysis supported these estimates, with 1.29 ± 0.16 and 2.15 ± 0.29 nm average layer thicknesses. In addition to layer thickness estimation, the model was used to predict overcoating penetration into the porous catalyst. The model estimated a penetration depth of ∼19 µm, and cross-sectional scanning electron microscopy supported the prediction with a deepest penetration of 15-18 µm. The model successfully estimated the deepest penetration, however, the microscopy study showed penetration depth fluctuation between 0-18 µm, having an average of 9.6 µm.

2.
ACS Omega ; 7(9): 7725-7736, 2022 Mar 08.
Article in English | MEDLINE | ID: mdl-35284741

ABSTRACT

Atomic layer deposition (ALD) and molecular layer deposition (MLD) methods were used to prepare overcoatings on a cobalt-based Fischer-Tropsch catalyst. A Co-Pt-Si/γ-Al2O3 catalyst (21.4 wt % Co, 0.2 wt % Pt, and 1.6 wt % Si) prepared by incipient wetness impregnation was ALD overcoated with 30-40 cycles of trimethylaluminum (TMA) and water, followed by temperature treatment (420 °C) in an inert nitrogen atmosphere. MLD-overcoated samples with corresponding film thicknesses were prepared by using TMA and ethylene glycol, followed by temperature treatment (400 °C) in an oxidative synthetic air atmosphere. The ALD catalyst (40 deposition cycles) had a positive activity effect upon moderate water addition (P H2O/P H2 = 0.42), and compared with a non-overcoated catalyst, it showed resistance to irreversible deactivation after co-fed water conditions. In addition, MLD overcoatings had a positive effect on the catalyst activity upon moderate water addition. However, compared with a non-overcoated catalyst, only the 10-cycle MLD-overcoated catalyst retained increased activity throughout high added water conditions (P H2O/P H2 = 0.71). All catalyst variations exhibited irreversible deactivation under high added water conditions.

3.
ACS Omega ; 3(7): 7141-7149, 2018 Jul 31.
Article in English | MEDLINE | ID: mdl-31458876

ABSTRACT

Novel coating materials are constantly needed for current and future applications in the area of microelectronics, biocompatible materials, and energy-related devices. Molecular layer deposition (MLD) is answering this cry and is an increasingly important coating method for organic and hybrid organic-inorganic thin films. In this study, we have focused on hybrid inorganic-organic coatings, based on trimethylaluminum, monofunctional aromatic precursors, and ring-opening reactions with ozone. We present the MLD processes, where the films are produced with trimethylaluminum, one of the three aromatic precursors (phenol, 3-(trifluoromethyl)phenol, and 2-fluoro-4-(trifluoromethyl)benzaldehyde), ozone, and the fourth precursor, hydrogen peroxide. According to the in situ Fourier-transform infrared spectroscopy measurements, the hydrogen peroxide reacts with the surface carboxylic acid group, forming a peroxyacid structure (C(O)-O-OH), in the case of all three processes. In addition, molecular modeling for the processes with three different aromatic precursors was carried out. When combining these modeling results with the experimental research data, new interesting aspects of the film growth, reactions, and properties are exploited.

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