Highly efficient passive InP polarization rotator-splitter.

Monolithically integrated polarization beam splitters (PBSs) are needed to reduce the form-factor and assembly cost of optical coherent receivers. A highly efficient passive polarization rotator and splitter based on mode-evolution is demonstrated. The device is fabricated on InP substrate with a single etch-step and uses an adiabatic mode-converter and an asymmetric Y-coupler. Despite its simple fabrication process, the device shows a polarization extinction ratio (PER) better than 19 dB over 1520 nm to 1620 nm, thus covering both C- and L-band. The peak value of 24 dB is obtained for TE and TM polarizations. Its fabrication tolerance is large, so that even under a width variation of +/- 200 nm the PER remains above 17 dB over the entire C- and L-band.

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 µm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.5 Gb/s and 40 Gb/s AOWC for both wavelength up and down conversion.

Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser.

In this paper, we report the optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This technique allows us to reduce the MHz optical line width of the mode-locked laser longitudinal modes down to the line width of the source used for injection locking, 50 kHz. We show that more than 50 laser lines generated by the mode-locked laser are coherent with the narrow line width CW source. Two locking techniques are explored. In a first approach a hybrid mode-locked laser is injection-locked with a CW source. In a second approach, light from a modulated CW source is injected in a passively mode-locked laser cavity. The realization of such a frequency comb on a chip enables transceivers for high spectral efficiency optical communication.

Heterogeneously integrated III-V/silicon dual-mode distributed feedback laser array for terahertz generation.

We demonstrate an integrated distributed feedback (DFB) laser array as a dual-wavelength source for narrowband terahertz (THz) generation. The laser array is composed of four heterogeneously integrated III-V-on-silicon DFB lasers with different lengths enabling dual-mode lasing tolerant to process variations, bias fluctuations, and ambient temperature variations. By optical heterodyning the two modes emitted by the dual-wavelength DFB laser in the laser array using a THz photomixer composed of an uni-traveling carrier photodiode (UTC-PD), a narrow and stable carrier signal with a frequency of 0.357 THz is generated. The central operating frequency and the emitted terahertz wave linewidth are analyzed, along with their dependency on the bias current applied to the laser diode and ambient temperature.

Measurement and tuning of the chromatic dispersion of a silicon photonic wire around the half band gap spectral region.

We demonstrate the measurement and tuning of second-to-fourth order dispersion of a silicon wire waveguide in a spectral region of low nonlinear losses. Using white light interferometry we extract the chromatic dispersion of our waveguide from 1950 to 2300 nm. Moreover we demonstrate tuning of the zero dispersion wavelength over more than 100 nm, pushing it to longer wavelength by partially underetching the waveguide.

Heterodyne laser Doppler vibrometers integrated on silicon-on-insulator based on serrodyne thermo-optic frequency shifters.

Miniaturized laser Doppler vibrometers (LDVs) have many advantages over conventional bulk LDVs. In this paper, the realization of a miniaturized heterodyne LDV integrated on silicon-on-insulator substrate is reported. The optical frequency shifters in these on-chip LDVs employ a serrodyne technique, and they generate a frequency shift at 2 kHz. Vibrations of a mirror for the frequency range between 1.1 and 123 Hz and the velocity range between 0.8 and 400 µm/s are measured by both an on-chip LDV and a commercial LDV. The measurement results agree well. A compensation method for the influence of on-chip spurious reflections is also demonstrated.

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser.

A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 °C and a thermo-optic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

Adhesively bonded Ce:YIG/SOI integrated optical circulator.

A classical 3-port optical circulator is demonstrated on the silicon-on-insulator (SOI) platform. A garnet die with a magneto-optical cerium-doped yttrium iron garnet (Ce:YIG) layer is bonded on top of a Mach-Zehnder interferometer circuit using a thin adhesive bonding layer. The power transmission between different ports is characterized in the presence of an external magnetic field, transversal to the light propagation direction. An isolation of 22 dB is measured at a wavelength of 1562 nm.

High-efficiency ultrasmall polarization converter in InP membrane.

An ultrasmall (<10 µm length) polarization converter in InP membrane is fabricated and characterized. The device relies on the beating between the two eigenmodes of chemically etched triangular waveguides. Measurements show a very high polarization conversion efficiency of >99% with insertion losses of <-1.2 dB at a wavelength of 1.53 µm. Furthermore, our design is found to be broadband and tolerant to dimension variations.