Intrinsic and strain dependent ultralow thermal conductivity in novel AuX (X = Cu, Ag) monolayers for outstanding thermoelectric applications.

A large power factor and ultralow lattice thermal conductivity in 2D-monolayers of AuX (X = Cu and Ag) are achieved via first principles calculations. Low phonon frequency, small Debye temperature and high Gruneisen parameter limit the intrinsic thermal conductivity of both the studied materials. An ultra-low lattice thermal conductivity of 0.13 (0.30) W m-1 K-1 and 0.66 (1.59) W m-1 K-1 is obtained for unstrained AuCu and AuAg monolayers, respectively, at 700 (300) K, which further reduces to 0.04 (0.09) and 0.26 (0.63) W m-1 K-1 at 6% biaxial tensile strain. Such values of thermal conductivity are lower than the critical thermal conductivity for the state-of-art thermoelectric materials (kl < 2 W m-1 K-1). The peak values of ZT for unstrained monolayers are 2.20 and 1.40, which enhances to 3.61 and 2.91 at 6% strain for AuCu and AuAg monolayers, respectively. Interestingly pudding-mold band textures are found to be responsible for this unusual thermoelectric behaviour. The stability concerns (chemical/dynamic/mechanical) of these monolayers are ensured to stimulate experimental determinations for novel synthesis and possible applications.

Photoluminescence Emission Studies on a Lanthanum-Doped Lead Free Double Halide Perovskite, La:Cs2SnCl6.

Recent advances in bandgap engineering have increased the possibility of vacancy ordered double halide perovskites (VO-DHPs), Cs2SnX6 where X = Cl, Br, I with designable optoelectronic features. Doping with La3+ ions modulates the band gap from 3.8 to 2.7 eV, allowing a steady room temperature dual emission (PL) centered at 440 and 705 nm in Cs2SnCl6. Pristine Cs2SnCl6 and La:Cs2SnCl6 both have a crystalline cubic structure with a space symmetry of Fm3m. The cubic phase correlates well with the Rietveld refinement. SEM analysis confirms anisotropic development with huge micrometer-sized (>10 µm) truncated octahedral structures. DFT investigations show that the insertion of La3+ ions into the crystal lattice leads to the band splitting. The present study elaborates the experimental understanding of the dual PL emission properties of La:Cs2SnCl6 leaving a scope for detailed theoretical study on the origin of the complex electronic transitions involving f-orbital electrons.

Electronic Structure-, Phonon Spectrum-, and Effective Mass- Related Thermoelectric Properties of PdXSn (X = Zr, Hf) Half Heuslers.

We hereby discuss the thermoelectric properties of PdXSn(X = Zr, Hf) half Heuslers in relation to lattice thermal conductivity probed under effective mass (hole/electrons) calculations and deformation potential theory. In addition, we report the structural, electronic, mechanical, and lattice dynamics of these materials as well. Both alloys are indirect band gap semiconductors with a gap of 0.91 eV and 0.82 eV for PdZrSn and PdHfSn, respectively. Both half Heusler materials are mechanically and dynamically stable. The effective mass of electrons/holes is (0.13/1.23) for Zr-type and (0.12/1.12) for Hf-kind alloys, which is inversely proportional to the relaxation time and directly decides the electrical/thermal conductivity of these materials. At 300K, the magnitude of lattice thermal conductivity observed for PdZrSn is 15.16 W/mK and 9.53 W/mK for PdHfSn. The highest observed ZT value for PdZrSn and PdHfSn is 0.32 and 0.4, respectively.

Effect of Strain on the Electronic Structure and Phonon Stability of SrBaSn Half Heusler Alloy.

This paper presents the strain effects on the structural, electronic and phonon properties of a newly proposed SrBaSn half Heusler compound. Since it is stable considering chemical thermodynamics, we tested its strength against uniform strain w.r.t phonon spectrum and it produces a direct bandgap of 0.7 eV. The direct bandgap reduces to 0.19 eV at -12% strain beyond which the structure is unstable. However, an indirect gap of 0.63 eV to 0.39 eV is observed in the range of +5% to +8% strain and afterwards the strain application destabilizes the structure. From elastic parameters, the ductile nature of this material is observed.

Inspecting the electronic structure and thermoelectric power factor of novel p-type half-Heuslers.

In line for semiconducting electronic properties, we systematically scrutinize the likely to be grown half-Heusler compounds XTaZ (X = Pd, Pt and Z = Al, Ga, In) for their stability and thermoelectric properties. The energetically favored F-43m configuration of XTaZ alloys at equilibrium lattice constant is a promising non-magnetic semiconductor reflected from its total valence electron count (NV = 18) and electronic structure calculations. Alongside mechanical stability, the dynamic stability is guaranteed from lattice vibrations and the phonon studies. The energy gaps of these stable Ta-based materials with Z = Ga are estimated to reach as high as 0.46 eV when X = Pd and 0.95 eV when X = Pt; however, this feature is reduced when Z = Al/In and X = Pd/Pt, respectively. Lattice thermal conductivity calculations are achieved to predict the smallest room temperature value of KL = 33.6 W/K (PdTaGa) and 38.0 W/mK (for PtAlGa) among the proposed group of Heusler structures. In the end, we investigated the plausible thermoelectric performance of XTaZ alloys, which announces a comparable difference for the n-type and p-type doping regions. Among the six alloys, PtTaAl, PtTaGa and PtTaIn are predicted to be the most efficient materials where the power factor (PF) elevates up to ~ 90.5, 106.7, 106.5 mW/(K2m), respectively at 900 K; however the lower values are recorded for PdTaAl (~ 66.5), PdTaGa (~ 76.5) and PdTaIn (~ 73.4) alloys. While this reading unlocks avenues for additional assessment of this new class of Half Heuslers, the project approach used here is largely appropriate for possible collection of understandings to realize novel stable materials with potential high temperature applications.

Optical, electrochemical and photocatalytic properties of cobalt doped CsPbCl3 nanostructures: a one-pot synthesis approach.

The present manuscript aims at the synthesis of cesium based halide perovskite nanostructures and the effect of cobalt doping on the structural, optical, lumnisent, charge storage and photocatalytic properties. In a very first attempt, we report the solvothermal synthesis of Co doped CsPbCl3 nanostructures under subcritical conditions. The structural features were demonstrated by X-ray diffraction (XRD) Surface morphology determined cubic shape of the synthesized particles. Doping is an excellent way to modify the properties of host material in particular to the electronic structure or optical properties. Incorporation of Co2+ ions in the perovskite structure tunes the optical properties of the nanostructures making this perovskite a visible light active material (Eg = 1.6 eV). This modification in the optical behaviour is the result of size effect, the crystallite size of the doped nanostructures increases with cobalt doping concentration. Photolumniscance (PL) study indicated that CsPbCl3 exhibited Blue emission. Thermogravametric analysis (TGA) revealed that the nanostructures are quite stable at elavated temperatures. The electrochemical performance depicts the pseudocapacative nature of the synthesized nanostructures and can used for charge storage devices. The charge storage capability showed direct proportionality with cobalt ion concentration. And Finally the photocatalytic performance of synthesized material shows superior catalytic ability degrading 90% of methylene blue (MB) dye in 180 min under visible light conditions.

Thioglycolic acid assisted hydrothermal growth of SnS 2D nanosheets as catalysts for photodegradation of industrial dyes.

We present our work on the rapid hydrothermal synthesis of highly crystalline 2D SnS nanostructures. An innovative idea is used in which thioglycolic acid is the sulfur precursor source. Structural studies indicate the material has grown in a single-phase orthorhombic structure. The single-phase formation of the material is also confirmed from the rietveld refinement of the experimental XRD data and by raman spectroscopic analysis. Morphological studies show the formation of 2D sheets having thickness in the nanoscale (100-150 nm) dimensions. Optical absorbance studies show the material is visible-light active exhibiting an indirect bandgap of 1.1 eV and direct band gap ∼1.7 eV. Density functional theory calculations support the experimental bandgap results. Photocatalytic activity of the nanosheets was investigated against methylene blue (MB), rhodamine B (RhB) and methyl orange (MO) dyes employing a solar simulator as the source of photons (light source). The nanosheets were found to photodegrade 80% of MB, 77% of RhB and 60% of MO in 120 min of light illumination. Reusability and post catalytic properties affirm the durability and stability of the nanosheets, which is very important in the context of waste water treatment considering the toxic nature of the effluents from dye industries.

Unique topological nodal line states and associated exceptional thermoelectric power factor platform in Nb3GeTe6 monolayer and bulk.

To date, ideal topological nodal line semimetal (TNLS) candidates in high dynamically stable and high thermally stable two-dimensional (2D) materials are still extremely scarce. Herein, by performing first-principles calculations, on the one hand, we found that three-dimensional Nb3GeTe6 bulk possesses a single closed TNL in the kx = 0 plane and a fourfold TNL in the S-R direction without considering spin-orbit coupling (SOC). Under the SOC effect, a new topological signature, i.e., hourglass-like Dirac nodal line, occurs in Nb3GeTe6 bulk. On the other hand, we found that the 2D Nb3GeTe6 monolayer features a doubly degenerate TNL along surface X-S paths. Importantly, this monolayer enjoys the following advantages: (i) it has high thermal stability at room temperature and above; (ii) its TNL is nearly flat in energy and is very close to the Fermi level (EF), which provides a fantastic maximum value platform of the thermoelectric power factor around the EF; and (iii) no extraneous bands are close to the TNL, near the Fermi level. Moreover, we explore the entanglement between the topological states and thermolectric properties for the 2D Nb3GeTe6 monolayer. Our work not only reports the discovery of a novel TNL material, but also builds the link between the TNL and thermoelectric properties.

Lattice dynamics, mechanical stability and electronic structure of Fe-based Heusler semiconductors.

The structural and mechanical stability of Fe2TaAl and Fe2TaGa alloys along with the electronic properties are explored with the help of density functional theory. On applying different approximations, the enhancement of semiconducting gap follows the trend as GGA < mBJ < GGA + U. The maximum forbidden gaps observed by GGA + U method are Eg = 1.80 eV for Fe2TaAl and 1.30 eV for Fe2TaGa. The elastic parameters are simulated to determine the strength and ductile nature of these materials. The phonon calculations determine the dynamical stability of all these materials because of the absence of any negative frequencies. Basic understandings of structural, elastic, mechanical and phonon properties of these alloys are studied first time in this report.

Electronic structure, mechanical and thermodynamic properties of BaPaO3 under pressure.

Density functional theory (DFT)-based investigations have been put forward on the elastic, mechanical, and thermo-dynamical properties of BaPaO3. The pressure dependence of electronic band structure and other physical properties has been carefully analyzed. The increase in Bulk modulus and decrease in lattice constant is seen on going from 0 to 30 GPa. The predicted lattice constants describe this material as anisotropic and ductile in nature at ambient conditions. Post-DFT calculations using quasi-harmonic Debye model are employed to envisage the pressure-dependent thermodynamic properties like Debye temperature, specific heat capacity, Grüneisen parameter, thermal expansion, etc. Also, the computed Debye temperature and melting temperature of BaPaO3 at 0 K are 523 K and 1764.75 K, respectively.

A case study of Fe2TaZ (Z = Al, Ga, In) Heusler alloys: hunt for half-metallic behavior and thermoelectricity.

We have computed the electronic structure and transport properties of Fe2TaZ (Z = Al, Ga, In) alloys by the full-potential linearized augmented plane wave (FPLAPW) method. The magnetic conduct in accordance with the Slater-Pauling rule classifies them as non-magnetic alloys with total zero magnetic moment. The semiconducting band profile and the density of states in the post DFT treatment are used to estimate the relations among various transport parameters such as Seebeck coefficient, electrical conductivity, thermal conductivity, and figure of merit. The Seebeck coefficient variation and band profiles describe the p-type behavior of charge carriers. The electrical and thermal conductivity plots follow the semiconducting nature of bands along the Fermi level. The overall measurements show that semi-classical Boltzmann transport theory has well-behaved potential in predicting the transport properties of such functional materials, which may find the possibility of their experimental synthesis for future applications in thermoelectric technologies.