Highly Reliable Flexible Device with a Charge Compensation Layer.

Flexible devices fabricated with a polyimide (PI) substrate are essential for foldable, rollable, and stretchable products and various applications. However, inherent technical challenges remain in mobile charge-induced device instabilities and image retention, significantly hindering future technologies. Here, we introduce a new barrier material, SiCOH, into the backplane of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) and applied it to production-level flexible panels. We found that the SiCOH layer effectively compensates for the surface charging induced by fluorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive shifts in threshold voltage (Vth) and image disturbance. The a-IGZO TFTs and metal-insulator-metal and metal-insulator-semiconductor capacitors with a SiCOH layer demonstrate reliable device performance, Vth shifts, and capacitance changes with an increase in gate bias stress. A flexible device with SiCOH enables the suppression of abnormal Vth shifts associated with PIs and plays a vital role in image sticking. This work provides new insights into process integrity and paves the way for expediting versatile form factors.

Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays.

In this paper, we investigate the Vth shift of p-type LTPS TFTs fabricated on a polyimide (PI) and glass substrate considering charging phenomena. The Vth of the LTPS TFTs with a PI substrate positively shift after a bias temperature stress test. However, the Vth with a glass substrate rarely changed even with increasing stress. Such a positive Vth shift results from the negative charging of fluorine stemmed from the PI under the gate bias. In fact, the C-V characterization on the metal-insulator-metal capacitor reveals that charging at the SiO2/PI interface depends on the applied gate bias and the PI material, which agrees well with the TCAD simulation and SIMS analyses. As a result, the charging at the SiO2/PI interface contributes to the Vth shift of the LTPS TFTs leading to image sticking.