Arrays of Ag split-ring resonators coupled to InGaAs single-quantum-well gain.

We study arrays of silver split-ring resonators operating at around 1.5-µm wavelength coupled to an MBE-grown single 12.7-nm thin InGaAs quantum well separated only 4.8 nm from the wafer surface. The samples are held at liquid-helium temperature and are pumped by intense femtosecond optical pulses at 0.81-µm center wavelength in a pump-probe geometry. We observe much larger relative transmittance changes (up to about 8%) on the split-ring-resonator arrays as compared to the bare quantum well (not more than 1-2%). We also observe a much more rapid temporal decay component of the differential transmittance signal of 15 ps for the case of split-ring resonators coupled to the quantum well compared to the case of the bare quantum well, where we find about 0.7 ns. These observations are ascribed to the evanescent coupling of the split-ring resonators to the quantum-well gain. All experimental results are compared with a recently introduced analytical toy model that accounts for this evanescent coupling, leading to excellent overall qualitative agreement.

Transition between different coherent light-matter interaction regimes analyzed by phase-resolved pulse propagation.

We present phase-resolved pulse propagation measurements that allow us to fully describe the transition between several light-matter interaction regimes. The complete range from linear excitation to the breakdown of the photonic bandgap on to self-induced transmission and self-phase modulation is studied on a high-quality multiple-quantum-well Bragg structure. An improved fast-scanning cross-correlation frequency-resolved optical gating setup is applied to retrieve the pulse phase with an excellent signal-to-noise ratio. Calculations using the semiconductor Maxwell-Bloch equations show qualitative agreement with the experimental findings.

Carrier-wave Rabi flopping: role of the carrier-envelope phase.

Recently, a dependence of Rabi flopping on the carrier-envelope phase of the exciting laser pulses was predicted theoretically [Phys. Rev. Lett. 89, 127401 (2002)] for excitation of a thin semiconductor film with intense few-cycle pulses. Here, we report corresponding experiments on 50-100-nm thin GaAs films excited with 5-fs pulses. We find a dependence on the carrier-envelope phase arising from the interference of sidebands from the fundamental or the third-harmonic Mollow triplet, respectively, with surface second-harmonic generation.