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2.
BMJ Case Rep ; 20102010 Dec 29.
Article in English | MEDLINE | ID: mdl-22802482

ABSTRACT

Pyloric gland-type adenoma of the duodenum with documented malignant progression is rare. A case is presented of an 87-year-old man with bloating and nausea, who on investigation was found to have a polyp on the anteroinferior wall of the duodenal cap. Histologic examination of the polyp showed features of a pyloric gland adenoma (PGA) demonstrating the full spectrum of progression from low- to high-grade dysplasia and finally invasive adenocarcinoma. The carcinoma showed gastric-type differentiation highlighted by its mucin immunohistochemistry profile and was of advanced stage with lymph node metastasis. The literature on PGAs and the little documentations on progression to carcinoma in duodenal PGAs are reviewed.


Subject(s)
Adenocarcinoma/pathology , Adenoma/pathology , Duodenal Neoplasms/pathology , Gastric Mucosa , Neoplasms, Multiple Primary/pathology , Stomach Neoplasms/pathology , Aged, 80 and over , Humans , Male
5.
J Nanosci Nanotechnol ; 7(1): 329-34, 2007 Jan.
Article in English | MEDLINE | ID: mdl-17455499

ABSTRACT

Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the largest memory window among the three programming mechanisms. The DCHE and SCHE have similar endurance characteristics, but the SCHE has a longer retention time than the DCHE. Both the DCHE and SCHE have a larger memory window, a better endurance and a longer retention time as compared to the FN. Explanations to the phenomena are given.


Subject(s)
Information Storage and Retrieval , Nanoparticles/chemistry , Silicon/chemistry , Software , Computer Storage Devices , Electronics , Equipment Design , Microscopy, Electron, Transmission , Nanotechnology , Oxides/chemistry , Time Factors
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