ABSTRACT
Systematic planar Hall measurements have been performed on a ferromagnetic Fe film grown on a standard (001) GaAs substrate at room temperature. The angular dependence of the planar Hall effect revealed the presence of both four-fold (cubic) and two-fold (uniaxial) anisotropies in the 7 nm thick Fe film. The dominance of the four-fold symmetric anisotropy, however, provided four magnetic easy axes near the (100) direction, which results in a two step switching phenomenon in the magnetization reversal process. An interesting asymmetric hysteresis loop was observed in the planar Hall resistance (PHR) when the turning point of the field scan is set at the value in the region of the second transition. The intermediate resistance states appearing in the asymmetric PHR loop were understood in terms of mutli-domain structures formed during the second switching of magnetization. Such multi-domain structure of the Fe film showing robust time stability provided additional Hall resistance states, which can be used for multi-valued memory device applications.
ABSTRACT
The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
