ABSTRACT
The energy level offset at inorganic layer-organic layer interfaces and the mismatch of hole/electron mobilities of the individual layers greatly limit the establishment of balanced charge carrier injection inside the emissive layer of halide perovskite light-emitting diodes (PeQLEDs). In contrast with other types of light-emitting devices, namely OLEDs and QLEDs, various techniques such as inserting an electron suppression layer between the emissive and electron transport layer have been employed as a means of establishing charge carrier injection into their respective emissive layers. Hence, in this study, we report the use of a thin layer of Poly(4-vinylpyridine) (PVPy) (an electron suppression material) placed between the emissive and electron transport layer of a halide PeQLEDs fabricated with an inverted configuration. With ZnO as the electron transport material, devices fabricated with a thin PVPy interlayer between the ZnO ETL and CsPbBr3 -based green QDs emissive layer yielded a 4.5-fold increase in the maximum observed luminance and about a 10-fold increase in external quantum efficiency (EQE) when compared to ones fabricated without PVPy. Furthermore, the concentration and coating process conditions of CsPbBr3 QDs were altered to produce various thicknesses and film properties which resulted in improved EQE values for devices fabricated with QDs thin films of lower surface root-mean-square (RMS) values. These results show that inhibiting the excessive injection of electrons and adjusting QDs layer thickness in perovskite-inverted QLEDs is an effective way to improve device luminescence and efficiency, thereby improving the carrier injection balance.
ABSTRACT
A desire to achieve optimal electron transport from the electron transport layer (ETL) towards the emissive layer (EML) is an important research factor for the realization of high performance quantum dot light-emitting diodes (QD-LEDs). In this paper, we study the effect of a single, double, and electron transport layer sandwiched Poly(4-vinylpyridine) (PVPy here on) on the charge injection balance and on the overall device performance of InP-based red quantum dot light emitting diodes (red QD-LEDs). The results showed general improvement of device characteristic performance metrics such as operational life with incorporation of a PVPy interlayer. The best performance was observed at a lower concentration of PVPy (@ 0.1 mg/mL) in interlayer with continual worsening in performance as PVPy concentration in the interlayer increased in other fabricated devices. The AFM images obtained for the different materials reported improved surface morphology and overall improved surface properties, but decreased overall device performance as PVPy concentration in interlayer was increased. Furthermore, we fabricated two special devices: in the first special device, a single 0.1 mg/mL PVPy sandwiched between two ZnO ETL layers, and in the second special device, two 0.1 mg/mL PVPy interlayers were inter-sandwiched between two ZnO ETL layers. Particular emphasis was placed on monitoring the maximum obtained EQE and the maximum obtained luminance of all the devices. The first special device showed better all-round improved performance than the second special device compared to the reference device (without PVPy) and the device with a single 0.1 mg/mL PVPy interlayer stacked between ZnO ETL and the emissive layer.
ABSTRACT
Various nanoparticle surface layers allow unique functionalities. We developed a coating method with tetracyanoquinodimethane that forms solid layers through π stacking on gold nanorod surfaces. Its reaction mechanism was investigated with reaction time, aging time and surfactant concentration. Our method could be generalizable to different nanoparticle shapes and crystal facets.
