Halogenated 9H-Indeno[1,2-b]Pyrazine-2,3-Dicarbonitrile End Groups Based Asymmetric Non-Fullerene Acceptors for Green Solvent-Processable, Additive-Free, and Stable Organic Solar Cells.

Non-fullerene acceptors (NFAs) significantly enhance photovoltaic performance in organic solar cells (OSCs) using halogenated solvents and additives. However, these solvents are environmentally detrimental and unsuitable for industrial-scale production, and the issue of OSCs' poor long-term stability persists. This report introduces eight asymmetric NFAs (IPCnF-BBO-IC2F, IPCnF-BBO-IC2Cl, IPCnCl-BBO-IC2F, and IPCnCl-BBO-IC2Cl, where n = 1 and 2). These NFAs comprise a 12,13-bis(2-butyloctyl)-3,9-diundecyl-12,13-dihydro-[1,2,5]thiadiazolo[3,4-e]thieno[2'',3'':4',5']thieno[2',3':4,5]pyrrolo[3,2-g]thieno[2',3':4,5]thieno-[3,2-b]indole (BBO) core. One end of the core attaches to a mono- or di-halogenated 9H-indeno[1,2-b]pyrazine-2,3-dicarbonitrile (IPC) end group (IPC1F, IPC1Cl, IPC2F, or IPC2Cl), while the other end connects to a 2-(5,6-dihalo-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (IC) end group (IC2F or IC2Cl). The optical and electronic properties of these NFAs can be finely tuned by controlling the number of halogen atoms. Crucially, these NFAs demonstrate excellent compatibility with PM6 even in o-xylene, facilitating the production of additive-free OSCs. The di-halogenated IPC-based NFAs outperform their mono-halogenated counterparts in photovoltaic performance within OSCs. Remarkably, the di-halogenated IPC-based NFAs maintain 94‒98% of their initial PCEs over 2000 h in air without encapsulation, indicating superior long-term device stability. These findings imply that the integration of di-halogenated IPCs in asymmetric NFA design offers a promising route to efficient, stable OSCs manufactured through environmentally friendly processes.

Investigation of Hole-Transfer Dynamics through Simple EL De-Convolution in Non-Fullerene Organic Solar Cells.

In conventional fullerene-based organic photovoltaics (OPVs), in which the excited electrons from the donor are transferred to the acceptor, the electron charge transfer state (eECT) that electrons pass through has a great influence on the device's performance. In a bulk-heterojunction (BHJ) system based on a low bandgap non-fullerene acceptor (NFA), however, a hole charge transfer state (hECT) from the acceptor to the donor has a greater influence on the device's performance. The accurate determination of hECT is essential for achieving further enhancement in the performance of non-fullerene organic solar cells. However, the discovery of a method to determine the exact hECT remains an open challenge. Here, we suggest a simple method to determine the exact hECT level via deconvolution of the EL spectrum of the BHJ blend (ELB). To generalize, we have applied our ELB deconvolution method to nine different BHJ systems consisting of the combination of three donor polymers (PM6, PBDTTPD-HT, PTB7-Th) and three NFAs (Y6, IDIC, IEICO-4F). Under the conditions that (i) absorption of the donor and acceptor are separated sufficiently, and (ii) the onset part of the external quantum efficiency (EQE) is formed solely by the contribution of the acceptor only, ELB can be deconvoluted into the contribution of the singlet recombination of the acceptor and the radiative recombination via hECT. Through the deconvolution of ELB, we have clearly decided which part of the broad ELB spectrum should be used to apply the Marcus theory. Accurate determination of hECT is expected to be of great help in fine-tuning the energy level of donor polymers and NFAs by understanding the charge transfer mechanism clearly.

Asymmetric Polymer Additive for Morphological Regulation and Thermally Stable Organic Solar Cells.

High thermal stability is crucial for the commercialization of organic solar cells (OSCs). The thermal stability of OSCs has been improved using the tailoring blend morphology of bulk heterojunctions (BHJs). Herein, we demonstrated thermally stable OSCs in a ternary blended system containing low-crystalline semiconducting polymers (asy-PNDI1FTVT and PTB7-Th) and a non-fullerene acceptor (Y6). The asymmetric n-type semiconducting polymer (asy-PNDI1FTVT) differed from general symmetric semiconducting polymers as it randomly substituted fluorine atoms at the donor moiety (TVT), resulting in significantly lower crystallinity. asy-PNDI1FTVT in PTB7-Th:Y6 exhibited a well-mixed morphology at the BHJ and efficiently facilitated the charge dissociation process with an enhanced fill factor and power conversion efficiency. Furthermore, the ternary system of PTB7-Th:Y6:asy-PNDI1FTVT suppressed phase separation with negligible burn-in loss and performance degradation under thermal stress. The experiments showed that our devices without encapsulation retained over 90% of their initial efficiencies after 100 h at 65 °C. These results show significant potential for the development of thermally stable OSCs with reasonable efficiency.

Impact of symmetry-breaking of non-fullerene acceptors for efficient and stable organic solar cells.

The concurrent enhancement of short-circuit current (J SC) and open-circuit voltage (V OC) is a key problem in the preparation of efficient organic solar cells (OSCs). In this paper, we report efficient and stable OSCs based on an asymmetric non-fullerene acceptor (NFA) IPC-BEH-IC2F. The NFA consists of a weak electron-donor core dithienothiophen[3,2-b]-pyrrolobenzothiadiazole (BEH) and two kinds of strong electron-acceptor (A) units [9H-indeno[1,2-b]pyrazine-2,3-dicarbonitrile (IPC) with a tricyclic fused system and 2-(5,6-difluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (IC2F)]. For comparison, the symmetric NFAs IPC-BEH-IPC and IC2F-BEH-IC2F were characterised. The kind of flanking A unit significantly affects the light absorption features and electronic structures of the NFAs. The asymmetric IPC-BEH-IC2F has the highest extinction coefficient among the three NFAs owing to its strong dipole moment and highly crystalline feature. Its highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) levels lie between those of the IPC-BEH-IPC and IC2F-BEH-IC2F molecules. The IPC group also promotes molecular packing through the tricyclic π-conjugated system and achieves increased crystallinity compared to that of the IC2F group. Inverted-type photovoltaic devices based on p-type polymer:NFA blends with PBDB-T and PM6 polymers as p-type polymers were fabricated. Among all these devices, the PBDB-T:IPC-BEH-IC2F blend device displayed the best photovoltaic properties because the IPC unit provides balanced electronic and morphological characteristics. More importantly, the PBDB-T:IPC-BEH-IC2F-based device exhibited the best long-term stability owing to the strongly interacting IPC moiety and the densely packed PBDB-T:IPC-BEH-IC2F film. These results demonstrate that asymmetric structural modifications of NFAs are an effective way for simultaneously improving the photovoltaic performance and stability of OSCs.

Multiply Charged Conjugated Polyelectrolytes as a Multifunctional Interlayer for Efficient and Scalable Perovskite Solar Cells.

A series of anionic conjugated polyelectrolytes (CPEs) is synthesized based on poly(fluorene-co-phenylene) by varying the side-chain ionic density from two to six per repeat units (MPS2-TMA, MPS4-TMA, and MPS6-TMA). The effect of MPS2, 4, 6-TMA as interlayers on top of a hole-extraction layer of poly(bis(4-phenyl)-2,4,6-trimethylphenylamine (PTAA) is investigated in inverted perovskite solar cells (PeSCs). Owing to the improved wettability of perovskites on hydrophobic PTAA with the CPEs, the PeSCs with CPE interlayers demonstrate a significantly enhanced device performance, with negligible device-to-device dependence relative to the reference PeSC without CPEs. By increasing the ionic density in the MPS-TMA interlayers, the wetting, interfacial defect passivation, and crystal growth of the perovskites are significantly improved without increasing the series resistance of the PeSCs. In particular, the open-circuit voltage increases from 1.06 V for the PeSC with MPS2-TMA to 1.11 V for the PeSC with MPS6-TMA. The trap densities of the PeSCs with MPS2,4,6-TMA are further analyzed using frequency-dependent capacitance measurements. Finally, a large-area (1 cm2 ) PeSC is successfully fabricated with MPS6-TMA, showing a power conversion efficiency of 18.38% with negligible hysteresis and a stable power output under light soaking for 60 s.

11% Organic Photovoltaic Devices Based on PTB7-Th: PC71BM Photoactive Layers and Irradiation-Assisted ZnO Electron Transport Layers.

The enhancement of interfacial charge collection efficiency using buffer layers is a cost-effective way to improve the performance of organic photovoltaic devices (OPVs) because they are often universally applicable regardless of the active materials. However, the availability of high-performance buffer materials, which are solution-processable at low temperature, are limited and they often require burdensome additional surface modifications. Herein, high-performance ZnO based electron transporting layers (ETLs) for OPVs are developed with a novel g-ray-assisted solution process. Through careful formulation of the ZnO precursor and g-ray irradiation, the pre-formation of ZnO nanoparticles occurs in the precursor solutions, which enables the preparation of high quality ZnO films. The g-ray assisted ZnO (ZnO-G) films possess a remarkably low defect density compared to the conventionally prepared ZnO films. The low-defect ZnO-G films can improve charge extraction efficiency of ETL without any additional treatment. The power conversion efficiency (PCE) of the device using the ZnO-G ETLs is 11.09% with an open-circuit voltage (VOC), short-circuit current density ( JSC), and fill factor (FF) of 0.80 V, 19.54 mA cm-2, and 0.71, respectively, which is one of the best values among widely studied poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]: [6,6]-phenyl-C71-butyric acid methyl ester (PTB7-Th:PC71BM)-based devices.

Water-resistant PEDOT:PSS hole transport layers by incorporating a photo-crosslinking agent for high-performance perovskite and polymer solar cells.

We demonstrated a water-resistant PEDOT:PSS HTL by incorporating a photo-crosslinking agent into a PEDOT:PSS film. A crosslinking system was successfully formed inside the PEDOT:PSS film by simple and fast photo-polymerization of PCDSA monomers. Combination of the crosslinking system and MeOH surface treatment simultaneously improved the device efficiency and stability of both perovskite and polymer solar cells. The crosslinking system inside PEDOT:PSS changed its intrinsic water-soluble characteristic into a water-resistant property, thus preventing water penetration into the PEDOT:PSS film. In addition, MeOH treatment improved the surface conductivity and reduced the surface roughness of the PEDOT:PSS film by removing surface residues of PDAs and insulating PSS parts.

Ultrasonic-Assisted Spin-Coating: Improved Junction by Enhanced Permeation of a Coating Material within Nanostructures.

Over the last decades, the spin-coating (SC) technique has been widely used to prepare thin films of various materials in the liquid phase on arbitrary substrates. The technique simply relies on the centrifugal force to spread a coating solution radially outward over the substrate. This mechanism works fairly well for solutions with low surface tension to form thin films of reasonable junctions on smooth substrates. Here, we present a modified SC technique, namely, ultrasonic-assisted spin-coating (UASC), to form thin films of coating solution having high surface tension on rough substrates with excellent junctions. The UASC technique couples SC with an external ultrasonic wave generator to provide external perturbation to locally break down big drops of the coating material into smaller droplets via Rayleigh instability. Because of their lower mass, these tiny droplets gain low momenta and move slowly both in radial and azimuthal directions, giving them an enough time to effectively permeate within pores, thereby yielding excellent junctions. Furthermore, we also investigated the effect of junction improvement on conventional and inverted bulk heterojunction organic solar cells. Intriguingly, the organic solar cells fabricated by the UASC method showed an improved efficiency compared to typical SC owing to efficient charge transfer across the junction. These results clearly imply that UASC is a simple and powerful technique which can significantly enhance the device performance by improving the junction. Moreover, we believe that UASC can be more effective for the preparation of devices composed of multilayers of different materials having complicated nanostructures.