Single-material zinc sulfide bi-layer antireflection coatings for GaAs solar cells.

We demonstrated the efficiency improvement of GaAs single-junction (SJ) solar cells with the single-material zinc sulfide (ZnS) bi-layer based on the porous/dense film structure, which was fabricated by the glancing angle deposition (GLAD) method, as an antireflection (AR) coating layer. The porous ZnS film with a low refractive index was formed at a high incident vapor flux angle of 80° in the GLAD. Each optimum thickness of ZnS bi-layer was determined by achieving the lowest solar weighted reflectance (SWR) using a rigorous coupled-wave analysis method in the wavelength region of 350-900 nm, extracting the thicknesses of 20 and 50 nm for dense and porous films, respectively. The ZnS bi-layer with a low SWR of ~5.8% considerably increased the short circuit current density (J(sc)) of the GaAs SJ solar cell to 25.57 mA/cm(2), which leads to a larger conversion efficiency (η) of 20.61% compared to the conventional one without AR layer (i.e., SWR~31%, J(sc) = 18.81 mA/cm(2), and η = 14.82%). Furthermore, after the encapsulation, its J(sc) and η values were slightly increased to 25.67 mA/cm(2) and 20.71%, respectively. For the fabricated solar cells, angle-dependent reflectance properties and external quantum efficiency were also studied.

Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer.

Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed.

Highly efficient hybrid light-emitting device using complex of CdSe/ZnS quantum dots embedded in co-polymer as an active layer.

We propose a highly efficient hybrid light-emitting device (LED) with a single active layer where CdSe/ZnS quantum dots (QDs) are dispersed as a guest material in a conjugated polymer (co-polymer) matrix used for a host material. In our structure, the QDs act on light-emitting chromophores by trapping the migrating excitons in the co-polymer matrix via Förster energy transfer, and improve the charge balance within the co-polymer by trapping the injected electron carriers. Experimental results show that the electroluminescent properties highly depend on the doping density of the QDs within the co-polymer matrix, where the luminance as well as the external current efficiency are initially enhanced with increasing the concentration of the dispersed QDs in the co-polymer solution, and then such properties are degraded due to aggregation of the QDs. We can get the maximum brightness of 9,088 cd/m(2) and the maximum external current efficiency of 7.5 cd/A in mixing ratio of the QDs by 1.0 wt%. The external current efficiency is enhanced by over 15 times and the turn-on voltage is reduced in comparison with the corresponding values for a reference device that uses only a co-polymer as an active layer.

Variable wavelength surface plasmon resonance (SPR) in biosensing.

In this study, we fabricated a novel variable wavelength surface plasmon resonance (SPR) sensor, which detects resonance conditions such as a maximum attenuation wavelength, measuring change of microscopic refractive index. Such a change was measured to detect a salmonella antigen-antibody reaction and a penicillinase-penicillin reaction. Our experiments were performed after immobilizing a salmonella antibody on the sensor chip. We measured the shift in resonant wavelength during the antigen-antibody reaction for 30 min by injecting 5 x 10(7) cells/ml concentration of salmonella antigen solution into the sample chamber. Also, after immobilizing penicillinase on the sensor chip, we measured the shift in resonant wavelength during the reaction. Penicillin solution at 10mM was injected into the sample chamber. The shift of resonant wavelength for each experiment was measured using a white light source, multimode optical fiber, a part of sensor chip and an optical spectrum analyzer. As a result, the resonant wavelength shifted about 0.26 nm/min owing to the salmonella antibody-antigen reaction. Thus, we could detect the change in wavelength (0.8 nm/min) through the interaction of penicillin and penicillinase for 15 min using variable wavelength SPR sensor.