Determination of permeation properties of hydrogen gas in sealing rubbers using thermal desorption analysis gas chromatography.

Permeation properties of hydrogen gas (H2) into nitrile butadiene rubber (NBR), ethylene propylene diene monomer (EPDM), and fluoroelastomer (FKM) which are the strong candidates for sealing material in H2 energy infrastructures, was quantified using a thermal desorption analysis gas chromatography (TDA GC) and a self-developed diffusion-analysis program. The samples were charged with H2 in a high-pressure chamber for 24 h then decompressed into atmosphere, and the mass of H2 released from the sample was measured as a function of elapsed time after decompression. The developed program calculated the total charging amount C0 and diffusivity D, which were then used to calculate the H2 solubility S and permeability P for variation of pressure. The samples were polymerized with and without carbon black (CB) filler in cylindrical shapes with different diameters. There was no appreciable pressure up to 12 MPa or diameter dependence investigated in this study on D, S and P. NBR and EPDM showed dual hydrogen diffusion with fast and slow diffusion behaviors caused by CB, whereas FKM showed a single diffusion behavior. The determined D are Dfast, NBR = (1.55 ± 0.28) × 10-10 m2/s, Dslow, NBR = (3.1 ± 0.5) × 10-11 m2/s, Dfast, EPDM = (3.65 ± 0.66) × 10-10 m2/s, Dslow, EPDM = (3.3 ± 0.5) × 10-11 m2/s, DFKM = (7.7 ± 0.8) × 10-11 m2/s. It appeared that the filler contributes to increase S and decrease D. The uncertainty analysis against the evaluated data was carried out, too, in order that the method could be applicable as a standard test for the permeation properties of various polymer membranes.

Gas chromatography techniques to evaluate the hydrogen permeation characteristics in rubber: ethylene propylene diene monomer.

We established an ex-situ technique for evaluating hydrogen gas permeability by thermal desorption analysis (TDA) gas chromatography (GC) and by self-developed diffusion analysis software. Absorbed hydrogen mass in rubber, related to the GC-peak area, is recorded as a function of elapsed time after decompressing the hydrogen under high-pressure. From the charging amount (CH0) and diffusivity (D) obtained by the developed diffusion analysis program, the solubility(S) and permeability(P) is evaluated via Henry's law and P = SD, respectively. The techniques were applied to ethylene propylene diene monomer (EPDM) rubber, sealing material candidates in hydrogen infrastructures. EPDM sample mixed with carbon black fillers showed dual hydrogen diffusion behaviors, whereas EPDM sample without carbon black showed a single hydrogen diffusion behavior. There was no appreciable pressure or size dependence on D, S and P. P are consistent with that measured by different researcher within the expanded uncertainty.

Graphene-based optical waveguide tactile sensor for dynamic response.

Optical tactile sensors based on a directional coupler have been widely investigated because of their many advantages. However, one important requirement limits their wide application: the refractive index of the upper superstrate must be equal to or larger than that of the optical waveguide core. To overcome this disadvantage, an optical waveguide tactile sensor using graphene is proposed and its operational feasibility was validated experimentally. The pressure-dependent lateral deformation of the low-index prism-like microstructure on an elastomer superstrate has a key role in optically measuring the mechanical pressure. By mechanically varying the lateral deformation area, the waveguide core-graphene-polydimethylsiloxane (PDMS) interface area was adjusted and the amount of light absorption by graphene became tunable, even when the refractive index of the superstrate was lower than that of the waveguide core. The dynamic response of the sensor was accurately matched to the repeated pressing and release time of the pressure, and exhibited a real-time response to multi-stepped mechanical pressing and releasing using a piezoelectric motor. The proposed graphene-based optical tactile sensor is foundational to the use of a wide range of materials for overcoming the shortcoming of a directional coupler-based optical tactile sensor.

Laser-Induced Reduction of Graphene Oxide by Intensity-Modulated Line Beam for Supercapacitor Applications.

Supercapacitors are irreplaceable energy-storage devices for high power output and rapid charge/discharge of electrical energy. In this study, the laser-based fabrication of reduced graphene oxide (rGO) electrodes for supercapacitors is demonstrated with several new features of laser irradiation. A conventional CO2 laser irradiation system is equipped with (1) a nitrogen blower to avoid combustion of the GO paper, (2) a cylindrical lens for producing a wide line beam, and (3) an optical chopper system for generating an intensity-modulated laser beam. Scanning of the intensity-modulated line beam transforms an extended area of GO into chemically reduced and physically porous graphene. The effects of the laser beam modifications and scanning parameters on the electrochemical performance of the rGO electrode are investigated. The rGO electrode exhibits a high specific capacitance (up to ∼130 F/g) at a current density of 1 A/g. This work can serve as a reference for the process optimization of laser-induced GO reduction.

Activated Biomass-derived Graphene-based Carbons for Supercapacitors with High Energy and Power Density.

Here, we present a facile and low-cost method to produce hierarchically porous graphene-based carbons from a biomass source. Three-dimensional (3D) graphene-based carbons were produced through continuous sequential steps such as the formation and transformation of glucose-based polymers into 3D foam-like structures and their subsequent carbonization to form the corresponding macroporous carbons with thin graphene-based carbon walls of macropores and intersectional carbon skeletons. Physical and chemical activation was then performed on this carbon to create micro- and meso-pores, thereby producing hierarchically porous biomass-derived graphene-based carbons with a high Brunauer-Emmett-Teller specific surface area of 3,657 m2 g-1. Owing to its exceptionally high surface area, interconnected hierarchical pore networks, and a high degree of graphitization, this carbon exhibited a high specific capacitance of 175 F g-1 in ionic liquid electrolyte. A supercapacitor constructed with this carbon yielded a maximum energy density of 74 Wh kg-1 and a maximum power density of 408 kW kg-1, based on the total mass of electrodes, which is comparable to those of the state-of-the-art graphene-based carbons. This approach holds promise for the low-cost and readily scalable production of high performance electrode materials for supercapacitors.

Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

When silicon photonic integrated circuits (PICs), defined for transmitting and receiving optical data, are successfully monolithic-integrated into major silicon electronic chips as chip-level optical I/Os (inputs/outputs), it will bring innovative changes in data computing and communications. Here, we propose new photonic integration scheme, a single-chip optical transceiver based on a monolithic-integrated vertical photonic I/O device set including light source on bulk-silicon. This scheme can solve the major issues which impede practical implementation of silicon-based chip-level optical interconnects. We demonstrated a prototype of a single-chip photonic transceiver with monolithic-integrated vertical-illumination type Ge-on-Si photodetectors and VCSELs-on-Si on the same bulk-silicon substrate operating up to 50 Gb/s and 20 Gb/s, respectively. The prototype realized 20 Gb/s low-power chip-level optical interconnects for λ ~ 850 nm between fabricated chips. This approach can have a significant impact on practical electronic-photonic integration in high performance computers (HPC), cpu-memory interface, hybrid memory cube, and LAN, SAN, data center and network applications.

Silicon photonic receiver and transmitter operating up to 36 Gb/s for λ~1550 nm.

We present the hybrid-integrated silicon photonic receiver and transmitter based on silicon photonic devices and 65 nm bulk CMOS interface circuits operating over 30 Gb/s with a 10(-12) bit error rate (BER) for λ ~1550nm. The silicon photonic receiver, operating up to 36 Gb/s, is based on a vertical-illumination type Ge-on-Si photodetector (Ge PD) hybrid-integrated with a CMOS receiver front-end circuit (CMOS Rx IC), and exhibits high sensitivities of -11 dBm, -8 dBm, and -2 dBm for data rates of 25 Gb/s, 30 Gb/s and 36 Gb/s, respectively, at a BER of 10(-12). The measured energy efficiency of the Si-photonic receiver is 2.6 pJ/bit at 25 Gb/s with an optical input power of -11 dBm, and 2.1 pJ/bit at 36 Gb/s with an optical power of -2 dBm. The hybrid-integrated silicon photonic transmitter, comprised of a depletion-type Mach-Zehnder modulator (MZM) and a CMOS driver circuit (CMOS Tx IC), shows better than 5.7 dB extinction ratio (ER) for 25 Gb/s, and 3 dB ER for 36 Gb/s. The silicon photonic transmitter achieves the data transmission with less than 10(-15) BER at 25 Gb/s, 10(-14) BER at 28 Gb/s, and 6 x 10(-13) BER with the energy efficiency of ~6 pJ/bit at 30 Gb/s.

Nuclear quadrupole coupling parameters and structural nature of the nonlinear optical material Li2B4O7 by NMR.

The structural nature underlying the nonlinear optical (NLO) properties of Li2B4O7 is characterized by nuclear magnetic resonance (NMR). The rotation patterns of (11)B NMR were measured. We observed sixteen different spectra which were divided into two groups, corresponding to two types of boron atoms, 4-coordinated B(1) and 3-coordinated B(2), which have different boron-oxygen rings and lie at chemically inequivalent sites. From these results, the quadrupole parameter and the principal axis of the electric field gradient (EFG) tensor were determined for the two borons.

Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration.

We present small-sized depletion-type silicon Mach-Zehnder (MZ) modulator with a vertically dipped PN depletion junction (VDJ) phase shifter based on a CMOS compatible process. The fabricated device with a 100 µm long VDJ phase shifter shows a VπLπ of ∼0.6 V·cm with a 3 dB bandwidth of ∼50 GHz at -2 V bias. The measured extinction ratios are 6 and 5.3 dB for 40 and 50 Gb/s operation under 2.5 Vpp differential drive, respectively. On-chip insertion loss is 3 dB for the maximum optical transmission. This includes the phase-shifter loss of 1.88 dB/100 µm, resulting mostly from the extra optical propagation loss through the polysilicon-plug structure for electrical contact, which can be readily minimized by utilizing finer-scaled lithography nodes. The experimental result indicates that a compact depletion-type MZ modulator based on the VDJ scheme can be a potential candidate for future chip-level integration.

High-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm.

We present high-sensitivity photoreceivers based on a vertical- illumination-type 100% Ge-on-Si p-i-n photodetectors (PDs), which operate up to 50 Gb/s with high responsivity. A butterfly-packaged photoreceiver using a Ge PD with 3-dB bandwidth (f(-3dB)) of 29 GHz demonstrates the sensitivities of -10.15 dBm for 40 Gb/s data rate and -9.47 dBm for 43 Gb/s data rate, at BER of 10(-12) and λ ~1550 nm. Also a photoreceiver based on a Ge PD with f(-3dB)~19 GHz shows -14.14 dBm sensitivity at 25 Gb/s operation. These results prove the high performance levels of vertical-illumination type Ge PDs ready for practical high-speed network applications.

Si micro-ring MUX/DeMUX WDM filters.

We demonstrate 3rd order micro-ring filters, 100 GHz-spaced 16 channels and 50 GHz-spaced 32 channels. Fabrication-induced resonant wavelength errors, σ = 0.237 nm, and temperature-dependent wavelength shift, 0.043 nm/°C tolerable to ΔT>10 °C, has been measured on filters based on the fundamental TM mode. The problem of CMOS-compatible photolithography is solved, while maintaining a small radius, R = 9 µm. As some dummy channels are arranged, it is shown that an on-chip optical network for many cores CPU can be constructed by 16 channel ring filters with the currently available technology.

Low-voltage high-performance silicon photonic devices and photonic integrated circuits operating up to 30 Gb/s.

We present high performance silicon photonic circuits (PICs) defined for off-chip or on-chip photonic interconnects, where PN depletion Mach-Zehnder modulators and evanescent-coupled waveguide Ge-on-Si photodetectors were monolithically integrated on an SOI wafer with CMOS-compatible process. The fabricated silicon PIC(off-chip) for off-chip optical interconnects showed operation up to 30 Gb/s. Under differential drive of low-voltage 1.2 V(pp), the integrated 1 mm-phase-shifter modulator in the PIC(off-chip) demonstrated an extinction ratio (ER) of 10.5dB for 12.5 Gb/s, an ER of 9.1dB for 20 Gb/s, and an ER of 7.2 dB for 30 Gb/s operation, without adoption of travelling-wave electrodes. The device showed the modulation efficiency of V(π)L(π) ~1.59 Vcm, and the phase-shifter loss of 3.2 dB/mm for maximum optical transmission. The Ge photodetector, which allows simpler integration process based on reduced pressure chemical vapor deposition exhibited operation over 30 Gb/s with a low dark current of 700 nA at -1V. The fabricated silicon PIC(intra-chip) for on-chip (intra-chip) photonic interconnects, where the monolithically integrated modulator and Ge photodetector were connected by a silicon waveguide on the same chip, showed on-chip data transmissions up to 20 Gb/s, indicating potential application in future silicon on-chip optical network. We also report the performance of the hybrid silicon electronic-photonic IC (EPIC), where a PIC(intra-chip) chip and 0.13µm CMOS interface IC chips were hybrid-integrated.

High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.

We present a high-sensitivity photoreceiver based on a vertical- illumination-type 100% Ge-on-Si photodetector. The fabricated p-i-n photodetector with a 90 microm-diameter mesa shows the -3 dB bandwidth of 7.7 GHz, and the responsivity of 0.9 A/W at lambda approximately 1.55 microm, corresponding to the external quantum efficiency of 72%. A TO-can packaged Ge photoreceiver exhibits the sensitivity of -18.5 dBm for a BER of 10(-12) at data rate of 10 Gbps. This result proves the capability of a cost-effective 100% Ge-on-Si photoreceiver which can readily replace the III-V counterparts for optical communications.

High-modulation efficiency silicon Mach-Zehnder optical modulator based on carrier depletion in a PN Diode.

We present a high phase-shift efficiency Mach-Zehnder silicon optical modulator based on the carrier-depletion effect in a highly-doped PN diode with a small waveguide cross-sectional area. The fabricated modulator show a V(pi)L(pi) of 1.8 V x cm and phase shifter loss of 4.4 dB/mm. A device using a 750 microm-long phase-shifter exhibits an eye opening at 12.5 Gbps with an extinction ratio of 3 dB. Also, an extinction ratio of 7 dB is achieved at 4 Gbps for a device with a 2 mm-long phase shifter. Further enhancement of the extinction ratio at higher operating speed can be achieved using a travelling-wave electrode design and the optimal doping.

Adjusting resonant wavelengths and spectral shapes of ring resonators using a cladding SiN layer or KOH solution.

It is shown that the resonant frequencies and the transmission spectra of ring resonators can be adjusted by depositing or etching the cladding nitride layer on the ring waveguide without introducing an extra loss or extra variations of channel spacing. The cladding nitride layer increases the minimum width of the gap in the coupling region to larger than 150nm which makes it possible to consider photolithography instead of E-beam lithography for the typical design rule of ring filters. KOH silicon etching can also adjust not only the resonance frequencies but also coupling coefficients with a small sacrifice of guiding loss.