Highly efficient blue InGaN nanoscale light-emitting diodes.

Indium gallium nitride (InGaN)-based micro-LEDs (µLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability1-5. However, µLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction6-9. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE. To overcome the size-dependent EQE reduction problem8,9, we studied the interaction between the GaN surface and the sidewall passivation layer through various analyses. Minimizing the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol-gel method is advantageous for the passivation because SiO2 nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions. The fabricated nLEDs showed an EQE of 20.2 ± 0.6%, the highest EQE value ever reported for the LED in the nanoscale. This work opens the way for manufacturing self-emissive nLED displays that can become an enabling technology for next-generation displays.

Nonvolatile memory properties of Pt nanoparticle-embedded TiO(2) nanocomposite multilayers via electrostatic layer-by-layer assembly.

It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (Pt(NP)) with about 5.8 nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to Pt(NP)-embedded TiO(2) films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10(4)) and the stable device performance. These phenomena were caused by the presence of Pt(NP) inserted within TMO films.

Nonvolatile resistive switching memory properties of thermally annealed titania precursor/polyelectrolyte multilayers.

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. The multilayers were then converted to TiO2 nanocomposite (TiO2 NC) films after thermal annealing. A top electrode was coated on the TiO2 NC films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 VRESET and 1.3 VSET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing.

Resistive switching memory devices composed of binary transition metal oxides using sol-gel chemistry.

We describe a novel and versatile approach for preparing resistive switching memory devices based on binary transition metal oxides (TMOs). Titanium isopropoxide (TIPP) was spin-coated onto platinum (Pt)-coated silicon substrates using a sol-gel process. The sol-gel-derived layer was converted into a TiO2 film by thermal annealing. A top electrode (Ag electrode) was then coated onto the TiO2 films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (about 0.6 VRESET and 1.4 VSET). In addition, it was confirmed that the electrical properties (i.e., retention time, cycling test and switching speed) of the sol-gel-derived devices were comparable to those of vacuum deposited devices. This approach can be extended to a variety of binary TMOs such as niobium oxides. The reported approach offers new opportunities for preparing the binary TMO-based resistive switching memory devices allowing a facile solution processing.

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.

We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top contact was formed by depositing HfO2 and platinum. In this study, we investigated the effect of increasing the number of polyelectrolyte and gold nanoparticle layers on memory performance, including the size of the memory window (the critical voltage difference between the 'programmed' and 'erased' states of the devices) and programming speed. We observed a maximum memory window of about 1.8 V, with a stored electron density of 4.2 x 1012 cm-2 in the gold nanoparticle layers, when the devices consist of three polyelectrolyte/gold nanoparticle layers. The reported approach offers new opportunities to prepare nanostructured polyelectrolyte/gold nanoparticle-based memory devices with tailored performance.