ABSTRACT
The charging effect in a ZrO2 sintered body was investigated by using scanning ion microscope (SIM) images. In this study, we report interesting features caused by the charging effect in the ZrO2 sintered body during the Ga ion beam irradiation: a bright contrast with a distorted net shape appears around the positively charged specimen. From this feature in the SIM image, it is clarified that the Ga ion beam is strongly deflected and the wide area of the internal parts of the focused ion beam machine is irradiated by the Ga ion beam, depending on the extent to which the specimen is charged. We discuss the mechanism of the characteristic charging effect through observing SIM images by varying the intensity of the Ga ion beam.
Subject(s)
Gallium/chemistry , Zirconium/chemistry , Microscopy, Electron, Scanning/methods , RadiationABSTRACT
The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, DeltaV(p-n), by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, DeltaV(p-n) was estimated to be about 0.78 V assuming that the thickness of the dead layer on both surfaces is 50 nm, which is to show the difference of within 12% from the calculated value. It demonstrates that the backside ion milling method is a very promising specimen preparation technique for the reliable and quantitative analysis of dopant profiling with electron holography.
Subject(s)
Holography , Microscopy, Electron/methods , Specimen Handling/methods , Image Interpretation, Computer-Assisted/methods , Microscopy, Electron/instrumentation , Surface PropertiesABSTRACT
An evaluation technique for field emission guns (FEG-emitters) was established by using electron holography. For performing electron holography under an applied voltage, a specimen holder with the capabilities of three-directional motion as well as voltage application was developed. An unused Schottky emitter and a used emitter that had failed after operating for about 10,000 h were selected for this study. By visualizing the electric potential distributions around the emitters, it was clarified that a change in the edge shape of the emitter led to the change in the strength of the electric field. The observations revealed that electron holography can be applied to evaluate the performances of the various emitters.
Subject(s)
Electricity , Holography/methods , Electrons , Holography/instrumentation , Research Design , Specimen HandlingABSTRACT
The electric potential change in a single TaSi2 nanowire during field emission was visualized by means of electron holography. During the field emission, the interference fringes of the electron hologram were blurred locally between the TaSi2 nanowire and anode. This phenomenon was interpreted as being due to a change in the electric potential of approximately 1 V in the TaSi2 nanowire after each ballistic emission. The experiments on the single TaSi2 nanowire field emission behavior provide the useful information for understanding the field emission in the nano-field-emitting device.
Subject(s)
Electrochemistry/methods , Microelectrodes , Nanostructures/chemistry , Nanotechnology/methods , Sulfur/chemistry , Tantalum/chemistry , Crystallization/methods , Electrochemistry/instrumentation , Electromagnetic Fields , Macromolecular Substances/chemistry , Materials Testing , Molecular Conformation , Nanostructures/ultrastructure , Nanotechnology/instrumentation , Particle Size , Surface PropertiesABSTRACT
By means of electron holographic visualization of detailed electric potential distribution around sciatic nerve tissues coated with C and OsO(4), we show that the steady state of these specimens subjected to intense charging with electron irradiation is accompanied with a dynamic motion of collective secondary electrons; the secondary electrons emitted from the coated specimens revolve around the positively charged specimens forming stationary orbits. Further, this study clarified the possibility of the direct visualization of a part of the orbits of the collective secondary electrons without disturbing their motions.
Subject(s)
Holography/methods , Microscopy, Electron/methods , Sciatic Nerve/physiology , Sciatic Nerve/ultrastructure , Animals , Electrophysiology , Holography/instrumentation , Membrane Potentials , Mice , Mice, Inbred C57BL , Microfibrils/physiology , Microfibrils/ultrastructure , Microscopy, Electron/instrumentation , Static ElectricityABSTRACT
Nanometre-scale interfacial oxides formed in contact-hole-bottom Si surfaces were investigated by analytical electron microscopy coupled with a field-emission transmission electron microscope. The results showed that the chemical state of the residual oxide formed during reactive-ion etching was mostly changed from the suboxide of Si2+ or Si3+ to the oxide of Si4+ by the following light-etch treatment. Consequently, the process of removing the residual oxide by light-etch treatment was improved and it contributed to the accomplishment of lower contact resistance.
