Complex disaster response framework to reduce urban disaster vulnerability.

Cities are vulnerable to a range of disasters that can occur simultaneously due to their complexity. Therefore, an effective disaster response plan is needed to reduce the disaster vulnerability of cities. In particular, evacuation route management is important for reducing the losses from a disaster. Efficient disaster response can be realized by searching for suitable evacuation routes and effective road network management. In this paper, we propose a disaster response framework based on a multilayered road network structure and evacuation routes based on our road network. The suggested road structure consists of three layers for the effective management of the network. An A* algorithm-based search for multiple evacuation routes under different conditions in response to an individual disaster on the configured road map provides a safe route for evacuees. As a result, the damage caused by disasters in urban areas can be ameliorated.

Force uniformity control for large-area roll-to-roll process.

Demand for high throughput manufacturing has recently increased in various fields, such as electronics, photonics, optical devices, and energy. Moreover, flexible electronic devices are indispensable in applications such as touch screens, transparent conductive electrodes, transparent film heaters, organic photovoltaics, organic light-emitting diodes, and battery. For these applications, a large-area roll-to-roll (R2R) process is a promising method for producing with high throughput. However, bending deformation of rollers is unavoidable in a large-scale R2R system, which produces non-uniformity in force distribution during processing and reduces the sample quality. In this study, we propose a new R2R imprinting module to mitigate the deformation by using an additional backup roller to achieve uniform force distribution. From numerical simulations, we found that there exists an optimal imprinting force for each backup roller length to obtain the best uniformity. Experimental results using a large-area pressure sensor verified the effectiveness of the proposed method. Finally, the R2R nanoimprint lithography process showed that the proposed method produces patterns of 100 nm width with uniform residual layer thickness, which are distributed across the substrate of 1.2 m width.

Continuous Patterning of Copper Nanowire-Based Transparent Conducting Electrodes for Use in Flexible Electronic Applications.

Simple, low-cost and scalable patterning methods for Cu nanowire (NW)-based flexible transparent conducting electrodes (FTCEs) are essential for the widespread use of Cu NW FTCEs in numerous flexible optoelectronic devices, wearable devices, and electronic skins. In this paper, continuous patterning for Cu NW FTCEs via a combination of selective intense pulsed light (IPL) and roll-to-roll (R2R) wiping process was explored. The development of continuous R2R patterning could be achieved because there was significant difference in adhesion properties between NWs and substrates depending on whether Cu NW coated area was irradiated by IPL or not. Using a custom-built, R2R-based wiping apparatus, it was confirmed that nonirradiated NWs could be clearly removed out without any damage on irradiated NWs strongly adhered to the substrate, resulting in continuous production of low-cost Cu NW FTCE patterns. In addition, the variations in microscale pattern size by varying IPL process parameters/the mask aperture sizes were investigated, and possible factors affecting on developed pattern size were meticulously examined. Finally, the successful implementation of the patterned Cu NW FTCEs into a phosphorescent organic light-emitting diode (PhOLED) and a flexible transparent conductive heater (TCH) were demonstrated, verifying the applicability of the patterned FTCEs. It is believed that our study is the key step toward realizing the practical use of NW FTCEs in various flexible electronic devices.

Roll-to-roll-compatible, flexible, transparent electrodes based on self-nanoembedded Cu nanowires using intense pulsed light irradiation.

Copper nanowire (Cu NW)-based flexible transparent conductive electrodes (FTCEs) have been investigated in detail for use in various applications such as flexible touch screens, organic photovoltaics and organic light-emitting diodes. In this study, hexadecylamine (HDA) adsorbed onto the surface of NWs is changed into polyvinylpyrrolidone (PVP) via a ligand exchange process; the high-molecular-weight PVP enables high dispersion stability. Intense pulsed light (IPL) irradiation is used to remove organic species present on the surface of the NWs and to form direct connections between the NWs rapidly without any atmospheric control. NWs are self-nanoembedded into a plastic substrate after IPL irradiation, which results in a smooth surface, strong NW/substrate adhesion, excellent mechanical flexibility and enhanced oxidation stability. Moreover, Cu NW FTCEs with high uniformities are successfully fabricated on a large area (150 mm × 200 mm) via successive IPL irradiation that is synchronized with the motion of the sample stage. This study demonstrates the possibility of roll-to-roll-based, large-scale production of low-cost, high-performance Cu NW-based FTCEs.

Electrical and optical properties of Y-doped indium zinc oxide films grown by RF magnetron sputtering.

Y2O3-doped IZO (YIZO) films was investigated in order to control the carrier concentration of semiconducting IZO layer. Stoichiometric thin YIZO films were deposited on glass substrates by RF magnetron sputtering method using indium zinc oxide (IZO) including 50 wt.% ZnO and Y2O3 targets. During the deposition of YIZO films, the working pressure was fixed at 0.17 Pa and the deposition temperature was kept at room temperature while the oxygen partial pressure (P(O2)) was changed to find the optimal film condition. In order to check the PO2 effect on structural, electrical and optical properties of the grown YIZO layer on glass, X-ray diffraction (XRD) was employed to analyze the structure of YIZO films and the electrical properties were characterized by Hall measurements using the Van der Pauw geometry at room temperature. From the measured XRD patterns, exhibiting crystalline peak of the YIZO film deposited under PO2 condition is revealed while amorphous phase structure is only observed from the YIZO film deposited under pure Ar gas condition. As the O2 contents in gas increase, the resistivity of YIZO film also drastically increases, whereas the carrier concentration of the YIZO films sharply decreases with mobility.

Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

Thin transparent W-doped indium-zinc oxide (WIZO) layer on glass.

Annealing effect on structural and electrical properties of W-doped IZO (WIZO) films for thin film transistors (TFT) was studied under different process conditions. Thin WIZO films were deposited on glass substrates by RF magnetron co-sputtering technique using indium zinc oxide (10 wt.% ZnO-doped In2O3) and WO3 targets in room temperature. The post annealing temperature was executed from 200 degrees C to 500 degrees C under various O2/Ar ratios. We could not find any big difference from the surface observation of as grown films while it was found that the carrier density and sheet resistance of WIZO films were controlled by O2/Ar ratio and post annealing temperature. Furthermore, the crystallinity of WIZO film was changed as annealing temperature increased, resulting in amorphous structure at the annealing temperature of 200 degrees C, while clear In2O3 peak was observed for the annealed over 300 degrees C. The transmittance of as-grown films over 89% in visible range was obtained. As an active channel layer for TFT, it was found that the variation of resistivity, carrier density and mobility concentration of WIZO film decreased by annealing process.

Roll-printed organic thin-film transistor using patterned poly(dimethylsiloxane) (PDMS) stamp.

The roll-printed gate, source, and drain electrodes of organic thin-film transistors (OTFTs) were fabricated by gravure printing or gravure-offset printing using patterned poly(dimethylsiloxane) (PDMS) stamp with various channel lengths and low-resistance silver (Ag) pastes on flexible 150 x 150 mm2 plastic substrates. Bottom-contact roll-printed OTFTs used polyvinylphenol (PVP) as polymeric dielectric and bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) as organic semiconductor; they were formed by spin coating or ink-jetting. Depending on the choice of roll-printing method, the printed OTFTs obtained had a field-effect mobility of between 0.08 and 0.1 cm2/Vs, an on/off current ratio of between 10(4) and 10(5), and a subthreshold slope of between 1.96 and 2.32 V/decade. The roll-printing using patterned PDMS stamp and soluble processes made it possible to fabricate a printed OTFT with a channel length of between 12 to 74 microm on a plastic substrate; this was not previously possible using traditional printing techniques. The proposed fabrication process was 20 steps shorted than conventional fabrication techniques.