Fabrication of a 100 × 100 mm2 nanometer-thick graphite pellicle for extreme ultraviolet lithography by a peel-off and camphor-supported transfer approach.

An extreme ultraviolet (EUV) lithography pellicle is used to physically protect a mask from contaminants during the EUV exposure process and needs to have a high EUV transmittance. The EUV pellicle should be fabricated using a freestanding thin film with several tens of nanometer thickness in an area of 110 × 142 mm2, which is a challenging task. Here, we propose a peel-off approach to directly detach the nanometer-thick graphite film (NGF)/Ni film from SiO2/Si wafer and significantly shorten the etching time of the Ni film. Combined with the residue-damage-free transfer method that used camphor as a supporting layer, we successfully fabricated a large-area (100 × 100 mm2) NGF pellicle with a thickness of ∼20 nm, and an EUV transmittance of ∼87.2%.

Fabrication of extreme ultraviolet lithography pellicle with nanometer-thick graphite film by sublimation of camphor supporting layer.

An extreme ultraviolet (EUV) pellicle consists of freestanding thin films on a frame; these films are tens of nanometers in thickness and can include Si, SiNX, or graphite. Nanometer-thick graphite films (NGFs), synthesized via chemical vapor deposition on a metal catalyst, are used as a pellicle material. The most common method to transfer NGFs onto a substrate or a frame is to use polymethyl methacrylate (PMMA) as a supporting layer. However, this PMMA-mediated technique involves several disadvantages in term of manufacturing NGF EUV pellicles. When removing the PMMA using acetone or O2plasma, defects or deflections can occur in the NGFs. Furthermore, PMMA residues are generally present on large-area NGFs. In this study, a transfer method using camphor instead of PMMA as the supporting layer was developed to overcome these problems. After the camphor/NGF was formed on the frame, camphor was removed via sublimation in an atmosphere of ethanol vapor. This study investigated the deposition and sublimation of camphor, and confirmed that no residue was present and no deflection or defects were observed in the NGFs. Thus, a large-area NGF pellicle was successfully fabricated using the camphor transfer process.

Protective effect of Paeoniae radix alba root extract on immune alterations in mice with atopic dermatitis.

Atopic dermatitis is a progressive inflammatory disease characterized by type 2 helper T cell (TH2) reactivity. The aim of this study was to examine the therapeutic effects of Paeoniae radix alba root extract using a murine model of atopic dermatitis. Atopic dermatitis was induced in a murine model characterized by immune alterations skewed toward TH2 reactivity and pathophysiological dermal alterations which resemble human atopic dermatitis. The root extract at 1% or 6% was applied to the mouse dorsal skin for 3 weeks following induction of atopic dermatitis. Splenocytes were stimulated with immobilized anti-CD3 for 48 h to measure cytokine production. Levels of serum IgE, IgG1, and IgG2a were quantitated. Epidermal thickness and numbers of skin mast cells were determined. Mice in which atopic dermatitis was induced displayed increased numbers of skin mast cells, increased frequency of scratching, elevated serum IgE levels, increased ratios of IgG1 to IgG2a, and ratios of IL-4 to IFN-γ. The frequency of scratching was significantly decreased following application of 1% or 6% extract for 1 week. The root extract also reversed TH2 skewing, as serum IgE levels, ratio of serum IgG1 to IgG2a, and ratio of IL-4 to IFN-γ production by in vitro-stimulated splenocytes were all suppressed following application of 1% or 6% extract for 3 weeks. Taken together Paeoniae radix alba root extract is suggested to reverse the immunological alterations and skin manifestations symptoms found in atopic dermatitis.

Large-scale freestanding nanometer-thick graphite pellicles for mass production of nanodevices beyond 10 nm.

Extreme ultraviolet lithography (EUVL) has received much attention in the semiconductor industry as a promising candidate to extend dimensional scaling beyond 10 nm. We present a new pellicle material, nanometer-thick graphite film (NGF), which shows an extreme ultraviolet (EUV) transmission of 92% at a thickness of 18 nm. The maximum temperature induced by laser irradiation (λ = 800 nm) of 9.9 W cm(-2) was 267 °C, due to the high thermal conductivity of the NGF. The freestanding NGF was found to be chemically stable during annealing at 500 °C in a hydrogen environment. A 50 × 50 mm large area freestanding NGF was fabricated using the wet and dry transfer (WaDT) method. The NGF can be used as an EUVL pellicle for the mass production of nanodevices beyond 10 nm.