ABSTRACT
We study the use of random nanocomposite material as a photomask absorber layer for the next generation of extreme ultraviolet (EUV) lithography. By introducing nickel nanoparticles (NPs) randomly into a TaN host, the nanocomposite absorber layer can greatly reduce the reflectivity as compared with the standard TaN layer of the same thickness. Finite integral simulations show that the reduction in the reflectivity is mainly due to the enhanced absorption by the Ni NPs. The fluctuation in reflectivity induced by scattering and random position of the NPs is found to be on the order of 0.1%. Based on these observations, we build an effective medium model for the nanocomposite absorber layer and use the transfer matrix method to identify optimal absorber designs that utilize cavity effects to reduce the required volume fraction of Ni NPs. We further perform a process simulation and show that our approach can greatly reduce the HV bias in the lithography process.
ABSTRACT
A Fourier spectrum method to determine the dose-to-clear in a photoresist is proposed. The frequency content of scanning electron microscope resist images is used to determine whether the resist has been dissolved. Using this method, the dose to clear the resist is calculated automatically instead of via visual inspection, a method in which operator influence can affect the result.
ABSTRACT
Bragg grating reflectors etched in amorphous silicon overlay films have been integrated with Ti:LiNbO3 optical waveguides to obtain a narrow (0.05 nm) reflectance spectrum with a > 20 dB dip in the transmittance spectrum. These results were realized at a wavelength of 1542.7 nm for TE polarization on an x-cut, y-propagating substrate with gratings etched to a depth of approximately 93 nm in a 105 nm thick silicon film over a length of 12.5 mm. The reflectance in the channel waveguides is found to be strongly dependent on the depth of the etched grating. The effect of the Bragg waveguide loss factor on the transmittance and reflectance spectra is investigated by using a model for contradirectional coupling that includes an attenuation coefficient. The values for coupling constants kappa and amplitude attenuation constants alpha of samples etched for different time durations to control the grating depths are obtained from the model through the use of the depth of the dips in the transmittance spectra and the spectral widths of the reflectance peaks. It is concluded that the corrugated Si overlay film increases the insertion loss by approximately 2.7 dB, and the loss is not significantly affected by the grating depth.