Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit.

A gate stack that facilitates a high-quality interface and tight electrostatic control is crucial for realizing high-performance and low-power field-effect transistors (FETs). However, when constructing conventional metal-oxide-semiconductor structures with two-dimensional (2D) transition metal dichalcogenide channels, achieving these requirements becomes challenging due to inherent difficulties in obtaining high-quality gate dielectrics through native oxidation or film deposition. Here, a gate-dielectric-less device architecture of van der Waals Schottky gated metal-semiconductor FETs (vdW-SG MESFETs) using a molybdenum disulfide (MoS2) channel and surface-oxidized metal gates such as nickel and copper is reported. Benefiting from the strong SG coupling, these MESFETs operate at remarkably low gate voltages, <0.5 V. Notably, they also exhibit Boltzmann-limited switching behavior featured by a subthreshold swing of ≈60 mV dec-1 and negligible hysteresis. These ideal FET characteristics are attributed to the formation of a Fermi-level (EF) pinning-free gate stack at the Schottky-Mott limit. Furthermore, authors experimentally and theoretically confirm that EF depinning can be achieved by suppressing both metal-induced and disorder-induced gap states at the interface between the monolithic-oxide-gapped metal gate and the MoS2 channel. This work paves a new route for designing high-performance and energy-efficient 2D electronics.

Breech Presentation in Twins as a Risk Factor for Developmental Dysplasia of the Hip.

INTRODUCTION: Identifying risk factors associated with developmental dysplasia of the hip (DDH) is essential for early diagnosis and treatment. Breech presentation is a major DDH risk factor, possibly because of crowding of the fetus within the uterus. In multifetal pregnancy, fetuses are generally smaller than singletons, which may obscure the effect of breech presentation on fetal hips. Only a few studies have investigated the occurrence of DDH in multifetal pregnancies. In this study, we aimed to evaluate whether the breech presentation is a major risk factor of DDH in twin pregnancies. METHODS: This retrospective study included 491 consecutive live births (after 23+0 weeks gestation) delivered through cesarean section with at least 1 baby with noncephalic presentation in single or twin pregnancies from April 2013 to October 2018. We analyzed the incidence of DDH and its associated factors, including sex, breech, and multifetal pregnancy, with a generalized linear mixed model. RESULTS: The incidence of DDH was 12.5% in singleton with breech presentation, 9.8% in twin-breech presentation, and 0.7% in twin-cephalic presentation. Multivariate analysis showed that singleton-breech presentation (P=0.003), twin-breech presentation (P=0.003), and female sex (P=0.008) were independent risk factors for DDH. CONCLUSION: Breech presentation is an independent risk factor for DDH in twin pregnancies, although twin pregnancy itself is not an independent risk factor for DDH.

Rashba Effect in Functional Spintronic Devices.

Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

Facile synthesis of free-standing silicon membranes with three-dimensional nanoarchitecture for anodes of lithium ion batteries.

We propose a facile method for synthesizing a novel Si membrane structure with good mechanical strength and three-dimensional (3D) configuration that is capable of accommodating the large volume changes associated with lithiation in lithium ion battery applications. The membrane electrodes demonstrated a reversible charge capacity as high as 2414 mAh/g after 100 cycles at current density of 0.1 C, maintaining 82.3% of the initial charge capacity. Moreover, the membrane electrodes showed superiority in function at high current density, indicating a charge capacity >1220 mAh/g even at 8 C. The high performance of the Si membrane anode is assigned to their characteristic 3D features, which is further supported by mechanical simulation that revealed the evolution of strain distribution in the membrane during lithiation reaction. This study could provide a model system for rational and precise design of the structure and dimensions of Si membrane structures for use in high-performance lithium ion batteries.

Simple, large-scale patterning of hydrophobic ZnO nanorod arrays.

Here we describe a simple, versatile technique to produce large-scale arrays of highly ordered ZnO nanorods. Patterning of three distinct ZnO crystal morphologies is demonstrated through use of different ZnO seed layers. Array formation is accomplished through a simple variation on nanosphere lithography that imprints a thickness variation across a PMMA mask layer. The area of exposed seed layer is controlled through etching time in an oxygen plasma. Subsequent hydrothermal growth from the patterned seed layer produces high-quality ZnO crystals in uniform arrays. The high uniformity of the patterned array is shown to induce a high contact angle hydrophobic state even without the need for chemical modification of the ZnO surface. This technique provides a straightforward way to integrate the optical and electrical properties of high-quality ZnO nanorods with the tunable fluidic properties at the surface of well-ordered arrays.