ABSTRACT
This study investigates the effects of hydrogen post-treatment on 3D NAND flash memory. Hydrogen post-treatment annealing (PTA) is suggested to passivate the defects in the tunneling oxide/poly-Si interface and inside the poly-Si channel. However, excess hydrogen PTA can release hydrogen atoms from the passivated defects, which may degrade device performance. Therefore, it is important to determine the appropriate PTA condition for optimization of the device performance. Three different conditions for hydrogen PTA, namely Reference, H, and H++, are applied to observe the effects on device performance. The activation energy (Ea) of the device parameters was extracted according to the hydrogen PTA condition to analyze the effects. The extractedEais about 74 meV for Reference, 53 meV for H, and 58 meV for H++conditions, with the best performance observed at the H condition. Optimal hydrogen PTA shows the best on-current (51% higher than Reference) and stable short-term retention (66% suppressedΔVTthan Reference) in 9X stacked 3D NAND flash memory.
ABSTRACT
The simple ways for creating buckled structures to enhance the light extraction from OLED devices have been investigated. The buckling instability was observed when the ITO was deposited on the polymer-coated glass by sputtering. The textured surface of the ITO layer after buckling was characterized by an atomic force microscopy. The wavelength of the resulting buckled structure was a few microns in a size. The buckling was easily modified by adjusting the pressure of the argon gas during the sputter deposition of ITO layer. The buckled ITO layer was used for fabricating OLED devices. The reduction in the operating voltage for the OLED with the buckled ITO anode was observed. The current and power efficiencies for the OLED with the buckeld structure were 5% and 44% higher than those for the conventional OLED. The broader light distribution was observed in the OLED with buckling when the angular dependence of the light intensity was measured.
