A Finite Element Analysis Study of Edentulous Model with Complete Denture to Simulate Masticatory Movement.

The purposes of this study are to establish and validate a finite element (FE) model using finite element analysis methods and to identify optimal loading conditions to simulate masticatory movement. A three-dimensional FE model of the maxillary and mandibular cortical bone, cancellous bone, and gingiva was constructed based on edentulous cone-beam-computed tomography data. Dental computer-aided design software was used to design the denture base and artificial teeth to produce a complete denture. Mesh convergence was performed to derive the optimal mesh size, and validation was conducted through comparison with mechanical test results. The mandible was rotated step-by-step to induce movements similar to actual mastication. Results showed that there was less than a 6% difference between the mechanical test and the alveolar bone-complete denture. It opened 10° as set in the first stage, confirming that the mouth closed 7° in the second stage. Occlusal contact occurred between the upper and lower artificial teeth as the mouth closed the remaining angle of 3° in the third stage while activating the masseter muscle. These results indicate that the FE model and masticatory loading conditions developed in this study can be applied to analyze biomechanical effects according to the wearing of dentures with various design elements applied.

SOCS1 counteracts ROS-mediated survival signals and promotes apoptosis by modulating cell cycle to increase radiosensitivity of colorectal cancer cells.

As negative regulators of cytokine signaling pathways, suppressors of cytokine signaling (SOCS) proteins have been reported to possess both pro-tumor and anti-tumor functions. Our recent studies have demonstrated suppressive effects of SOCS1 on epithelial to mesenchymal signaling in colorectal cancer cells in response to fractionated ionizing radiation or oxidative stress. The objective of the present study was to determine the radiosensitizing action of SOCS1 as an anti-tumor mechanism in colorectal cancer cell model. In HCT116 cells exposed to ionizing radiation, SOCS1 over-expression shifted cell cycle arrest from G2/M to G1 and promoted radiation-induced apoptosis in a p53-dependent manner with down-regulation of cyclin B and up-regulation of p21. On the other hand, SOCS1 knock-down resulted in a reduced apoptosis with a decrease in G1 arrest. The regulatory action of SOCS1 on the radiation response was mediated by inhibition of radiation-induced Jak3/STAT3 and Erk activities, thereby blocking G1 to S transition. Radiation-induced early ROS signal was responsible for the activation of Jak3/Erk/STAT3 that led to cell survival response. Our data collectively indicate that SOCS1 can promote radiosensitivity of colorectal cancer cells by counteracting ROS-mediated survival signal, thereby blocking cell cycle progression from G1 to S. The resulting increase in G1 arrest with p53 activation then contributes to the promotion of apoptotic response upon radiation. Thus, induction of SOCS1 expression may increase therapeutic efficacy of radiation in tumors with low SOCS1 levels. [BMB Reports 2022; 55(4): 198-203].

Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.

We proposed a novel material named sodium hypochlorite (NaClO) solution as a source of activation for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). We reduced the activation temperature from 300 to 150 °C using NaClO solution (concentration: 50%) and obtained satisfactory electrical characteristics of a-IGZO TFTs. The field-effect mobility, threshold voltage, on/off ratio, subthreshold swing, and threshold voltage (Vth) shift under negative bias illumination stress (VG = -20 V and VD = 10.1 V for 10,000 s) of NaClO (50%)-activated a-IGZO TFTs were 10.41 cm2/V·s, 1.51 V, 2.78 × 108, 0.37 V/dec, and -5.43 V, respectively. Also, the Vth shifts of the NaClO (50%)-activated a-IGZO TFTs (150 °C) under the positive bias stress test decreased from 5.01 to 1.87 V (VG = 20 V and VD = 10.1 V for 10,000 s) compared with that of only-annealed (300 °C) a-IGZO TFTs. Also, the mechanism of NaClO activation for a-IGZO TFTs is clarified through photo-assisted oxygen radical (POR) and heat-driven oxygen radical (HOR) effects. The POR and HOR effects generated the reactive oxygen species (ROS) from NaClO solution (50%), which activated a-IGZO TFTs at a low temperature (150 °C). When the NaClO solution (50%) was exposed to external energy, it generated ROS such as hydroxyl radicals (OH•), hydroperoxyl radicals (HO2•), and oxygen radicals (O•), which promoted the formation of strong metal-oxide bonds in a-IGZO TFTs. Furthermore, NaClO solution (50%) was applied to a-IGZO TFTs on a flexible polyimide substrate and electrohydrodynamic printing process for selective deposition.

High Photosensitive Indium-Gallium-Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection.

Visible light can be detected using an indium-gallium-zinc oxide (IGZO)-based phototransistor, with a selenium capping layer (SCL) that functions as a visible light absorption layer. Selenium (Se) exhibits photoconductive properties as its conductivity increases with illumination. We report an IGZO phototransistor with an SCL (SCL/IGZO phototransistor) that demonstrated optimal photoresponse characteristics when the SCL was 150 nm thick. The SCL/IGZO phototransistor exhibited a photoresponsivity of 1.39 × 103 A/W, photosensitivity of 4.39 × 109, detectivity of 3.44 × 1013 Jones, and external quantum efficiency of 3.52 × 103% when illuminated by green light (532 nm). Ultraviolet-visible spectroscopy and ultraviolet photoelectron spectroscopy analysis showed that Se has a narrow energy band gap, in which visible light is absorbed and forms a p-n junction with IGZO so that photogenerated electron-hole pairs are easily separated, which makes recombination more challenging. We show that electrons generated in the SCL flow through the IGZO layer, which enables the phototransistor to detect visible light. Furthermore, the SCL/IGZO phototransistor exhibited excellent durability and reversibility owing to the constant light and dark current and the time-dependent photoresponse characteristics over 8000 s when a red light (635 nm) source was turned on and off at a frequency of 0.1 Hz.

Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors.

In recent decades, oxide thin-film transistors (TFTs) have attracted a great deal of attention as a promising technology in terms of next-generation electronics due to their outstanding electrical performance. However, achieving robust electrical characteristics under various environments is a crucial challenge for successful realization of oxide-based electronic applications. To resolve the limitation, we propose a highly flexible and reliable heterogeneous organic passivation layer composed of stacked parylene-C and diketopyrrolopyrrole-polymer films for improving stability of oxide TFTs under various environments and mechanical stress. The presented multifunctional heterogeneous organic (MHO) passivation leads to high-performance oxide TFTs by: (1) improving their electrical characteristics, (2) protecting them from external reactive molecules, and (3) blocking light exposure to the oxide layer. As a result, oxide TFTs with MHO passivation exhibit outstanding stability in ambient air as well as under light illumination: the threshold voltage shift of the device is almost 0 V under severe negative bias illumination stress condition (white light of 5700 lx, gate voltage of -20 V, and drain voltage of 10.1 V for 20 000 s). Furthermore, since the MHO passivation layer exhibits high mechanical stability at a bending radius of ≤5 mm and can be deposited at room temperature, this technique is expected to be useful in the fabrication of flexible/wearable devices.

Artificially Fabricated Subgap States for Visible-Light Absorption in Indium-Gallium-Zinc Oxide Phototransistor with Solution-Processed Oxide Absorption Layer.

We present a solution-processed oxide absorption layer (SAL) for detecting visible light of long wavelengths (635 and 532 nm) for indium-gallium-zinc oxide (IGZO) phototransistors. The SALs were deposited onto sputtered IGZO using precursor solutions composed of IGZO, which have the same atomic configuration as that of the channel layer, resulting in superior interface characteristics. We artificially generated subgap states in the SAL using a low annealing temperature (200 °C), minimizing the degradation of the electrical characteristics of thin-film transistor. These subgap states improved the photoelectron generation in SALs under visible light of long wavelength despite the wide band gap of IGZO (∼3.7 eV). As a result, IGZO phototransistors with SALs have both high optical transparency and superior optoelectronic characteristics such as a high photoresponsivity of 206 A/W and photosensitivity of ∼106 under the influence of a green (532 nm) laser. Furthermore, endurance tests proved that the IGZO phototransistor with SALs can operate stably under red laser illumination switched on and off at 0.05 Hz for 7200 s.

High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget.

Sputter-processed oxide films are typically annealed at high temperature (activation process) to achieve stable electrical characteristics through the formation of strong metal-oxide chemical bonds. For instance, indium-gallium-zinc oxide (IGZO) films typically need a thermal treatment at 300 °C for ≥1 h as an activation process. We propose an open-air plasma treatment (OPT) to rapidly and effectively activate sputter-processed IGZO films. The OPT effectively induces metal-oxide chemical bonds in IGZO films at temperatures as low as 240 °C, with a dwell time on the order of a second. Furthermore, by controlling the plasma-processing conditions (scan speed, distance a between plasma nozzle and samples, and gas flow rate), the electrical characteristics and the microstructure of the IGZO films can be easily tuned. Finally, OPT can be utilized to implement a selective activation process. Plasma-treated IGZO thin-film transistors (TFTs) exhibit comparable electrical characteristics to those of conventionally thermal treated IGZO TFTs. Through in-depth optical, chemical, and physical characterizations, we confirm that OPT simultaneously dissociates weak chemical bonds by UV radiation and ion bombardment and re-establishes the metal-oxide network by radical reaction and OPT-induced heat.

Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors.

We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium-gallium-zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal-oxide (M-O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V-1 s-1, subthreshold swing of 0.37 V dec-1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M-O bonds due to enhancement of the magnetic interaction per unit time as the rpm value increases. We suggest that this new process of activating IGZO TFTs at low temperature widens the choice of substrates in flexible or transparent devices.

Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.

We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films.

To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH3NH3PbI3) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 106, detectivity of 9.42 × 1010 Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH3NH3PbI3 could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.

Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection.

A homojunction-structured amorphous indium gallium zinc oxide (a-IGZO) phototransistor that can detect visible light is reported. The key element of this technology is an absorption layer composed of hydrogen-doped a-IGZO. This absorption layer is fabricated by simple hydrogen plasma doping, and subgap states are induced by increasing the amount of hydrogen impurities. These subgap states, which lead to a higher number of photoexcited carriers and aggravate the instability under negative bias illumination stress, enabled the detection of a wide range of visible light (400-700 nm). The optimal condition of the hydrogen-doped absorption layer (HAL) is fabricated at a hydrogen partial pressure ratio of 2%. As a result, the optimized a-IGZO phototransistor with the HAL exhibits a high photoresponsivity of 1932.6 A/W, a photosensitivity of 3.85 × 106, and a detectivity of 6.93 × 1011 Jones under 635 nm light illumination.

Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.

In this research, nitrocellulose is proposed as a new material for the passivation layers of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs). The a-IGZO TFTs with nitrocellulose passivation layers (NC-PVLs) demonstrate improved electrical characteristics and stability. The a-IGZO TFTs with NC-PVLs exhibit improvements in field-effect mobility (µFE) from 11.72 ± 1.14 to 20.68 ± 1.94 cm2/(V s), threshold voltage (Vth) from 1.85 ± 1.19 to 0.56 ± 0.35 V, and on/off current ratio (Ion/off) from (5.31 ± 2.19) × 107 to (4.79 ± 1.54) × 108 compared to a-IGZO TFTs without PVLs, respectively. The Vth shifts of a-IGZO TFTs without PVLs, with poly(methyl methacrylate) (PMMA) PVLs, and with NC-PVLs under positive bias stress (PBS) test for 10,000 s represented 5.08, 3.94, and 2.35 V, respectively. These improvements were induced by nitrogen diffusion from NC-PVLs to a-IGZO TFTs. The lone-pair electrons of diffused nitrogen attract weakly bonded oxygen serving as defect sites in a-IGZO TFTs. Consequently, the electrical characteristics are improved by an increase of carrier concentration in a-IGZO TFTs, and a decrease of defects in the back channel layer. Also, NC-PVLs have an excellent property as a barrier against ambient gases. Therefore, the NC-PVL is a promising passivation layer for next-generation display devices that simultaneously can improve electrical characteristics and stability against ambient gases.

Comparative study of postoperative stability between conventional orthognathic surgery and a surgery-first orthognathic approach after bilateral sagittal split ramus osteotomy for skeletal class III correction.

OBJECTIVES: The purpose of this study is to compare the postoperative stability of conventional orthognathic surgery to a surgery-first orthognathic approach after bilateral sagittal split ramus osteotomy (BSSRO). MATERIALS AND METHODS: The study included 20 patients who underwent BSSRO for skeletal class III conventional orthognathic surgery and 20 patients who underwent a surgery-first orthognathic approach. Serial lateral cephalograms were analyzed to identify skeletal changes before surgery (T0), immediately after surgery (T1), and after surgery (T2, after 1 year or at debonding). RESULTS: The amount of relapse of the mandible in the conventional orthognathic surgery group from T1 to T2 was 2.23±0.92 mm (P<0.01) forward movement and -0.87±0.57 mm (non-significant, NS) upward movement on the basis of point B and 2.54±1.37 mm (P<0.01) forward movement and -1.18±0.79 mm (NS) upward movement on the basis of the pogonion (Pog) point. The relapse amount of the mandible in the surgery-first orthognathic approach group from T1 to T2 was 3.49±1.71 mm (P<0.01) forward movement and -1.78±0.81 mm (P<0.01) upward movement on the basis of the point B and 4.11±1.93 mm (P<0.01) forward movement and -2.40±0.98 mm (P<0.01) upward movement on the basis of the Pog. CONCLUSION: The greater horizontal and vertical relapse may appear because of counter-clockwise rotation of the mandible in surgery-first orthognathic approach. Therefore, careful planning and skeletal stability should be considered in orthognathic surgery.

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors.

A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this 'electrical activation', the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

Mini-plate removal in maxillofacial trauma patients during a five-year retrospective study.

OBJECTIVES: The purpose of this study was to analyze the incidence of indications for the removal of mini-plates over a five-year period in maxillofacial trauma patients. MATERIALS AND METHODS: The medical records of 530 patients who underwent treatment with mini-plate fixation after maxillofacial trauma were reviewed for a five-year period (May 2007 to May 2012). Patients were evaluated concerning the number of mini-plates removed, age and gender distributions, time between insertion and removal, indication for removal, and site of removal. RESULTS: The plates of 120 patients were removed (26 females and 94 males). The removal rate was 22.6%. The most frequent indication for removal was patient demand (81.7%), followed by tooth extraction (7.5%), and pain (3.3%). The most frequent removal site was the mandible (95.0%). CONCLUSION: The number of mini-plates removed was small, and the most common indication for removal was patient demand. There is no evidence to support a recommendation for the routine removal of titanium mini-plates.

High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.

We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N2) and oxygen (O2) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O2 at 2 MPa were superior to those annealed in N2 at 4 MPa, despite the lower pressure. For O2 HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.

Nanotubular oxide surface and layer formed on the Ti-35Ta-xZr alloys for biomaterials.

Titanium and its alloys are widely used as a dental implant material in clinical dentistry and as an orthopedic implant materials due to their good mechanical properties, corrosion resistance, and biocompatibility. In this study, nanotubular oxide surface and layer formed on the Ti-35Ta-xZr alloys for biomaterials have been investigated by using electrochemical methods. Ti-35Ta-xZr alloys were prepared by arc melting and heat treated for 24 hr at 1000 degrees C in argon atmosphere, and then water quenching. Ti oxide nanotubes were formed on the Ti-35Ta-xZr alloys by anodizing in H3PO4 containing 0.8 wt% NaF solution at 25 degrees C. Anodization was carried out using a scanning potentiostat. Microstructures of the alloys and nanotube surface were examined by FE-SEM, EDX, and XRD. Crystallization treatment of nanotube surface was carried out for 3 hr at 450 degrees C. Microstructures of the Ti-35Ta-xZr alloys were changed from beta phase to alpha'' phase, and changed from an equiaxed to a needle-like structure with increasing Zr content. Nanotubular oxide surface and layers consisting of highly ordered nanotubes with a wide range of diameters (approximately 150-200 nm) and lengths (approximately 4-10 microm) can be formed on alloys in the Ti-35Ta-xZr alloys with Zr content. As the Zr content increased from 3% to 15%, length of step between the bamboo knob-like had increasing values of approximately 50 nm, 80 nm, and 140 nm, respectively. The nanotubes formed on the Ti-35Ta-xZr alloy surface were amorphous structure before heat treatment, but oxide surface had mainly an anatase structure by heat treatment.

Electrochemical behavior of nano and femtosecond laser textured titanium alloy for implant surface modification.

In this study, the electrochemical behavior of nano and femtosecond laser textured titanium alloy for implant surface modification has been researched using the potentiostat equipment. Cp-Ti and Ti-6Al-4V alloy, located on X-Y motorized stage, were irradiated using femtosecond laser. The corrosion properties were examined by a potentiodynamic and AC impedance test.