Coulomb-mediated antibunching of an electron pair surfing on sound.

Electron flying qubits are envisioned as potential information links within a quantum computer, but also promise-like photonic approaches-to serve as self-standing quantum processing units. In contrast to their photonic counterparts, electron-quantum-optics implementations are subject to Coulomb interactions, which provide a direct route to entangle the orbital or spin degree of freedom. However, controlled interaction of flying electrons at the single-particle level has not yet been established experimentally. Here we report antibunching of a pair of single electrons that is synchronously shuttled through a circuit of coupled quantum rails by means of a surface acoustic wave. The in-flight partitioning process exhibits a reciprocal gating effect which allows us to ascribe the observed repulsion predominantly to Coulomb interaction. Our single-shot experiment marks an important milestone on the route to realize a controlled-phase gate for in-flight quantum manipulations.

The functions of a reservoir offset voltage applied to physically defined p-channel Si quantum dots.

We propose and define a reservoir offset voltage as a voltage commonly applied to both reservoirs of a quantum dot and study the functions in p-channel Si quantum dots. By the reservoir offset voltage, the electrochemical potential of the quantum dot can be modulated. In addition, when quantum dots in different channels are capacitively coupled, the reservoir offset voltage of one of the QDs can work as a gate voltage for the others. Our results show that the technique will lead to reduction of the number of gate electrodes, which is advantageous for future qubit integration.

4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot.

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

Designs for a two-dimensional Si quantum dot array with spin qubit addressability.

Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 × 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 × 3 quantum dot array can execute four-qubit Grover's algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 × 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times.

Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response.

Radio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

Surpassing the classical limit in magic square game with distant quantum dots coupled to optical cavities.

The emergence of quantum technologies is heating up the debate on quantum supremacy, usually focusing on the feasibility of looking good on paper algorithms in realistic settings, due to the vulnerability of quantum systems to myriad sources of noise. In this vein, an interesting example of quantum pseudo-telepathy games that quantum mechanical resources can theoretically outperform classical resources is the Magic Square game (MSG), in which two players play against a referee. Due to noise, however, the unit winning probability of the players can drop well below the classical limit. Here, we propose a timely and unprecedented experimental setup for quantum computation with quantum dots inside optical cavities, along with ancillary photons for realizing interactions between distant dots to implement the MSG. Considering various physical imperfections of our setup, we first show that the MSG can be implemented with the current technology, outperforming the classical resources under realistic conditions. Next, we show that our work gives rise to a new version of the game. That is, if the referee has information on the physical realization and strategy of the players, he can bias the game through filtered randomness, and increase his winning probability. We believe our work contributes to not only quantum game theory, but also quantum computing with quantum dots.

Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade.

Preparing large-scale multi-partite entangled states of quantum bits in each physical form such as photons, atoms or electrons for each specific application area is a fundamental issue in quantum science and technologies. Here, we propose a setup based on Pauli spin blockade (PSB) for the preparation of large-scale W states of electrons in a double quantum dot (DQD). Within the proposed scheme, two W states of n and m electrons respectively can be fused by allowing each W state to transfer a single electron to each quantum dot. The presence or absence of PSB then determines whether the two states have fused or not, leading to the creation of a W state of n + m - 2 electrons in the successful case. Contrary to previous works based on quantum dots or nitrogen-vacancy centers in diamond, our proposal does not require any photon assistance. Therefore the 'complex' integration and tuning of an optical cavity is not a necessary prerequisite. We also show how to improve the success rate in our setup. Because requirements are based on currently available technology and well-known sensing techniques, our scheme can directly contribute to the advances in quantum technologies and, in particular in solid state systems.

Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots.

Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters, and therefore, its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by radio frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 µs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.

Terahertz detection with an antenna-coupled highly-doped silicon quantum dot.

Nanostructured dopant-based silicon (Si) transistors are promising candidates for high-performance photodetectors and quantum information devices. For highly doped Si with donor bands, the energy depth of donor levels and the energy required for tunneling processes between donor levels are typically on the order of millielectron volts, corresponding to terahertz (THz) photon energy. Owing to these properties, highly doped Si quantum dots (QDs) are highly attractive as THz photoconductive detectors. Here, we demonstrate THz detection with a lithographically defined and highly phosphorus-doped Si QD. We integrate a 40 nm-diameter QD with a micrometer-scale broadband logarithmic spiral antenna for the detection of THz photocurrent in a wide frequency range from 0.58 to 3.11 THz. Furthermore, we confirm that the detection sensitivity is enhanced by a factor of ~880 compared to a QD detector without an antenna. These results demonstrate the ability of a highly doped-Si QD coupled with an antenna to detect broadband THz waves. By optimizing the dopant distribution and levels, further performance improvements are feasible.

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility 1-4 , has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations 5-7 . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations 8-10 . Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 µs) 11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise-rather than conventional magnetic noise-as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.

A fault-tolerant addressable spin qubit in a natural silicon quantum dot.

Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor Q (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum Q = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot-based qubits. This result can inspire contributions to quantum computing from industrial communities.

Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition.

We report the growth of germanium nanowires (Ge NWs) with single-step temperature method via vapour-liquid-solid (VLS) mechanism in the low pressure chemical vapour deposition (CVD) reactor at 300 degrees C, 280 degrees C, and 260 degrees C. The catalyst used in our experiment was Au nanoparticles with equivalent thicknesses of 0.1 nm (average diameter approximately 3 nm), 0.3 nm (average diameter approximately 4 nm), 1 nm (average diameter approximately 6 nm), and 3 nm (average diameter approximately 14 nm). The Gibbs-Thomson effect was used to explain our experimental results. The Ge NWs grown at 300 degrees C tend to have tapered structure while the Ge NWs grown at 280 degrees C and 260 degrees C tend to have straight structure. Tapering was caused by the uncatalysed deposition of Ge atoms via CVD mechanism on the sidewalls of nanowire and significantly minimised at lower temperature. We observed that the growth at lower temperature yielded Ge NWs with smaller diameter and also observed that the diameter and length of Ge NWs increases with the size of Au nanoparticles for all growth temperatures. For the same size of Au nanoparticles, Ge NWs tend to be longer with a decrease in temperature. The Ge NWs grown at 260 degrees C from 0.1-nm-thick Au had diameter as small as approximately 3 nm, offering an opportunity to fabricate high-performance p-type ballistic Ge NW transistor, to realise nanowire solar cell with higher efficiency, and also to observe the quantum confinement effect.