Band Gap Opening in Borophene/GaN and Borophene/ZnO Van der Waals Heterostructures Using Axial Deformation: First-Principles Study.

One of the topical problems of materials science is the production of van der Waals heterostructures with the desired properties. Borophene is considered to be among the promising 2D materials for the design of van der Waals heterostructures and their application in electronic nanodevices. In this paper, we considered new atomic configurations of van der Waals heterostructures for a potential application in nano- and optoelectronics: (1) a configuration based on buckled triangular borophene and gallium nitride (GaN) 2D monolayers; and (2) a configuration based on buckled triangular borophene and zinc oxide (ZnO) 2D monolayers. The influence of mechanical deformations on the electronic structure of borophene/GaN and borophene/ZnO van der Waals heterostructures are studied using the first-principles calculations based on density functional theory (DFT) within a double zeta plus polarization (DZP) basis set. Four types of deformation are considered: uniaxial (along the Y axis)/biaxial (along the X and Y axes) stretching and uniaxial (along the Y axis)/biaxial (along the X and Y axes) compression. The main objective of this study is to identify the most effective types of deformation from the standpoint of tuning the electronic properties of the material, namely the possibility of opening the energy gap in the band structure. For each case of deformation, the band structure and density of the electronic states (DOS) are calculated. It is found that the borophene/GaN heterostructure is more sensitive to axial compression while the borophene/ZnO heterostructure is more sensitive to axial stretching. The energy gap appears in the band structure of borophene/GaN heterostructure at uniaxial compression by 14% (gap size of 0.028 eV) and at biaxial compression by 4% (gap size of 0.018 eV). The energy gap appears in the band structure of a borophene/ZnO heterostructure at uniaxial stretching by 10% (gap size 0.063 eV) and at biaxial compression by 6% (0.012 eV). It is predicted that similar heterostructures with an emerging energy gap can be used for various nano- and optoelectronic applications, including Schottky barrier photodetectors.

Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study.

At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current-voltage (I-V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.

2D Molybdenum Carbide MXenes for Enhanced Selective Detection of Humidity in Air.

2D transition metal carbides and nitrides (MXenes) open up novel opportunities in gas sensing with high sensitivity at room temperature. Herein, 2D Mo2 CTx flakes with high aspect ratio are successfully synthesized. The chemiresistive effect in a sub-µm MXene multilayer for different organic vapors and humidity at 101 -104  ppm in dry air is studied. Reasonably, the low-noise resistance signal allows the detection of H2 O down to 10 ppm. Moreover, humidity suppresses the response of Mo2 CTx to organic analytes due to the blocking of adsorption active sites. By measuring the impedance of MXene layers as a function of ac frequency in the 10-2 -106  Hz range, it is shown that operation principle of the sensor is dominated by resistance change rather than capacitance variations. The sensor transfer function allows to conclude that the Mo2 CTx chemiresistance is mainly originating from electron transport through interflake potential barriers with heights up to 0.2 eV. Density functional theory calculations, elucidating the Mo2 C surface interaction with organic analytes and H2 O, explain the experimental data as an energy shift of the density of states under the analyte's adsorption which induces increasing electrical resistance.

Thin Graphene-Nanotube Films for Electronic and Photovoltaic Devices: DFTB Modeling.

Supercell atomic models of composite films on the basis of graphene and single-wall carbon nanotubes (SWCNTs) with an irregular arrangement of SWCNTs were built. It is revealed that composite films of this type have a semiconducting type of conductivity and are characterized by the presence of an energy gap of 0.43-0.73 eV. It was found that the absorption spectrum of composite films contained specific peaks in a wide range of visible and infrared (IR) wavelengths. On the basis of calculated composite films volt-ampere characteristics (VAC), the dependence of the current flowing through the films on the distance between the nanotubes was identified. For the investigated composites, spectral dependences of the photocurrent were calculated. It was shown that depending on the distance between nanotubes, the maximum photocurrent might shift from the IR to the optical range.