ABSTRACT
A total of 46 species and two varieties of the traditionally interpreted genus Orthotrichum are currently known to occur in China. They represent five genera, including Orthotrichum (29 species), Lewinskya (14 species and two varieties), and Nyholmiella and Leratia that are represented by a single species each. The fifth genus Florschuetziella, also consisting of only one species, F. scaberrima, is an entirely neglected representative of the China's moss flora. A list of all accepted taxa is presented and for each taxon all literature records and herbarium specimens are enumerated for provinces in which they have been recorded, and their distribution is mapped. A key to determination of Chinese orthotrichalean mosses is presented. A chronological list of 63 species and varieties and two designations, O. catagonioides and O. microsporum which have never been validly published, reported from China in the years 1892-2020 is presented. Four species, Orthotrichum brasii, O. hooglandii, O. elegans and O. gymnostomum are excluded from the bryoflora of China and Lewinskya affinis var. bohemica and Orthotrichum schimperi are recorded for the first time from this country. Phytogeography of the Chinese taxa of the orthotrichalean mosses is considered and they are grouped into eight phytogeographical elements and five sub-elements.
ABSTRACT
The efficient manipulation of the optoelectronic properties of layered semiconductors is essential for future applications of these unique materials. Here, we demonstrate that single-layer, large-area graphene can serve as a conductive spacer between an electrolyte solution and single-layer MoS2. In situ Raman and photoluminescence (PL) spectroscopies were employed to monitor the charge transfer from graphene to MoS2. The Raman G and 2D bands were used to quantify the carrier concentration in graphene. The high efficiency of the charge transfer via graphene in a broad carrier concentration range of ±2.1 × 1013 cm-2 was documented by the extreme sensitivity of the MoS2 Raman mode to the electron-doping (shift rate of â¼2.5 cm-1/1 × 1013 cm-2 electron concentration) and the high sensitivity of the PL yield, which drops by more than one and two orders of magnitude in the hole and electron doping regimes, respectively. The easy implementation, and the lithography-free effectiveness of the setup, in terms of the achievable carrier concentration range and the charge-transfer efficiency, could be an asset in near-future research and in the development of optoelectronic devices.
ABSTRACT
Double-walled carbon nanotubes (DWCNTs) are materials in high demand due to their superior properties. However, it is very challenging to prepare DWCNTs samples of high purity. In particular, the removal of single-walled carbon nanotubes (SWCNTs) contaminants is a major problem. Here, a procedure for a selective removal of thin-diameter SWCNTs from their mixtures with DWCNTs by lithium vapor treatment is investigated. The results are evaluated by Raman spectroscopy and in situ Raman spectroelectrochemistry. It is shown that the amount of SWCNTs was reduced by about 35 % after lithium vapor treatment of the studied SWCNTs-DWCNTs mixture.
ABSTRACT
Evolutionary technique differential evolution (DE) is used for the evolutionary tuning of controller parameters for the stabilization of set of different chaotic systems. The novelty of the approach is that the selected controlled discrete dissipative chaotic system is used also as the chaotic pseudorandom number generator to drive the mutation and crossover process in the DE. The idea was to utilize the hidden chaotic dynamics in pseudorandom sequences given by chaotic map to help differential evolution algorithm search for the best controller settings for the very same chaotic system. The optimizations were performed for three different chaotic systems, two types of case studies and developed cost functions.
