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1.
Nano Lett ; 18(7): 4331-4337, 2018 07 11.
Article in English | MEDLINE | ID: mdl-29860834

ABSTRACT

Although vapor-liquid-solid (VLS) growth of nanowires from alloy seed particles is common in various semiconductor systems, related wire growth in all-metal systems is rare. Here, we report the spontaneous growth of nano- and microwires from metal seed particles during the cooling of Li-rich bulk alloys containing Au, Ag, or In. The as-grown wires feature Au-, Ag-, or In-rich metal tips and LiOH shafts; the results indicate that the wires grow as Li metal and are converted to polycrystalline LiOH during and/or after growth due to exposure to H2O and O2. This new process is a simple way to create nanostructures, and the findings suggest that metal nanowire growth from alloy seeds is possible in a variety of systems.

2.
ACS Appl Mater Interfaces ; 9(37): 32394-32404, 2017 Sep 20.
Article in English | MEDLINE | ID: mdl-28846377

ABSTRACT

Nanoscale transition-metal dichalcogenide (TMDC) materials, such as MoS2, exhibit promising behavior in next-generation electronics and energy-storage devices. TMDCs have a highly anisotropic crystal structure, with edge sites and basal planes exhibiting different structural, chemical, and electronic properties. In virtually all applications, two-dimensional or bulk TMDCs must be interfaced with other materials (such as electrical contacts in a transistor). The presence of edge sites vs basal planes (i.e., the crystallographic orientation of the TMDC) could influence the chemical and electronic properties of these solid-state interfaces, but such effects are not well understood. Here, we use in situ X-ray photoelectron spectroscopy (XPS) to investigate how the crystallography and structure of MoS2 influence chemical transformations at solid-state interfaces with various other materials. MoS2 materials with controllably aligned crystal structures (horizontal vs vertical orientation of basal planes) were fabricated, and in situ XPS was carried out by sputter-depositing three different materials (Li, Ge, and Ag) onto MoS2 within an XPS instrument while periodically collecting photoelectron spectra; these deposited materials are of interest due to their application in electronic devices or energy storage. The results showed that Li reacts readily with both crystallographic orientations of MoS2 to form metallic Mo and Li2S, while Ag showed very little chemical or electronic interaction with either type of MoS2. In contrast, Ge showed significant chemical interactions with MoS2 basal planes, but only minor chemical changes were observed when Ge contacted MoS2 edge sites. These findings have implications for electronic transport and band alignment at these interfaces, which is of significant interest for a variety of applications.

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