Investigation of the Effect of Double-Filler Atoms on the Thermoelectric Properties of Ce-YbCo4Sb12.

Skutterudite compounds have been studied as potential thermoelectric materials due to their high thermoelectric efficiency, which makes them attractive candidates for applications in thermoelectric power generation. In this study, the effects of double-filling on the thermoelectric properties of the CexYb0.2-xCo4Sb12 skutterudite material system were investigated through the process of melt spinning and spark plasma sintering (SPS). By replacing Yb with Ce, the carrier concentration was compensated for by the extra electron from Ce donors, leading to optimized electrical conductivity, Seebeck coefficient, and power factor of the CexYb0.2-xCo4Sb12 system. However, at high temperatures, the power factor showed a downturn due to bipolar conduction in the intrinsic conduction regime. The lattice thermal conductivity of the CexYb0.2-xCo4Sb12 skutterudite system was clearly suppressed in the range between 0.025 and 0.1 for Ce content, due to the introduction of the dual phonon scattering center from Ce and Yb fillers. The highest ZT value of 1.15 at 750 K was achieved for the Ce0.05Yb0.15Co4Sb12 sample. The thermoelectric properties could be further improved by controlling the secondary phase formation of CoSb2 in this double-filled skutterudite system.

NaCl Ionization-Based Moisture Sensor Prepared by Aerosol Deposition for Monitoring Respiratory Patterns.

A highly polarizable moisture sensor with multimodal sensing capabilities has great advantages for healthcare applications such as human respiration monitoring. We introduce an ionically polarizable moisture sensor based on NaCl/BaTiO3 composite films fabricated using a facile aerosol deposition (AD) process. The proposed sensing model operates based on an enormous NaCl ionization effect in addition to natural moisture polarization, whereas all previous sensors are based only on the latter. We obtained an optimal sensing performance in a 0.5 µm-thick layer containing NaCl-37.5 wt% by manipulating the sensing layer thickness and weight fraction of NaCl. The NaCl/BaTiO3 sensing layer exhibits outstanding sensitivity over a wide humidity range and a fast response/recovery time of 2/2 s; these results were obtained by performing the one-step AD process at room temperature without using any auxiliary methods. Further, we present a human respiration monitoring system using a sensing device that provides favorable and stable electrical signals under diverse respiratory scenarios.

Fabrication of Large-Area Mullite-Cordierite Composite Substrates for Semiconductor Probe Cards and Enhancement of Their Reliability.

This work aims to fabricate a large-area ceramic substrate for the application of probe cards. Mullite (M) and cordierite (C), which both have a low thermal expansion coefficient, excellent resistance to thermal shock, and high durability, were selected as starting powders. The mullite-cordierite composites were produced through different composition ratios of starting powders (M:C = 100:0, M:C = 90:10, M:C = 70:30, M:C = 50:50, M:C = 30:70, and M:C = 0:100). The effects of composition ratio and sintering temperature on the density, porosity, thermal expansion coefficient, and flexural strength of the mullite-cordierite composite pellets were investigated. The results showed that the mullite-cordierite composite pellet containing 70 wt% mullite and 30 wt% cordierite sintered at 1350 °C performed exceptionally well. Based on these findings, a large-area mullite-cordierite composite substrate with a diameter of 320 mm for use in semiconductor probe cards was successfully fabricated. Additionally, the changes in sheet resistance and flexural strength were measured to determine the effect of the environmental tests on the large-area substrate such as damp heat and thermal shock. The results indicated that the mullite-cordierite composite substrate was extremely reliable and durable.

Thermoelectric Properties of Cu2Te Nanoparticle Incorporated N-Type Bi2Te2.7Se0.3.

To develop highly efficient thermoelectric materials, the generation of homogeneous heterostructures in a matrix is considered to mitigate the interdependency of the thermoelectric compartments. In this study, Cu2Te nanoparticles were introduced onto Bi2Te2.7Se0.3 n-type materials and their thermoelectric properties were investigated in terms of the amount of Cu2Te nanoparticles. A homogeneous dispersion of Cu2Te nanoparticles was obtained up to 0.4 wt.% Cu2Te, whereas the Cu2Te nanoparticles tended to agglomerate with each other at greater than 0.6 wt.% Cu2Te. The highest power factor was obtained under the optimal dispersion conditions (0.4 wt.% Cu2Te incorporation), which was considered to originate from the potential barrier on the interface between Cu2Te and Bi2Te2.7Se0.3. The Cu2Te incorporation also reduced the lattice thermal conductivity, and the dimensionless figure of merit ZT was increased to 0.75 at 374 K for 0.4 wt.% Cu2Te incorporation compared with that of 0.65 at 425 K for pristine Bi2Te2.7Se0.3. This approach could also be an effective means of controlling the temperature dependence of ZT, which could be modulated against target applications.

Enhanced Production of Bacterial Cellulose from Miscanthus as Sustainable Feedstock through Statistical Optimization of Culture Conditions.

Biorefineries are attracting attention as an alternative to the petroleum industry to reduce carbon emissions and achieve sustainable development. In particular, because forests play an important role in potentially reducing greenhouse gas emissions to net zero, alternatives to cellulose produced by plants are required. Bacterial cellulose (BC) can prevent deforestation and has a high potential for use as a biomaterial in various industries such as food, cosmetics, and pharmaceuticals. This study aimed to improve BC production from lignocellulose, a sustainable feedstock, and to optimize the culture conditions for Gluconacetobacter xylinus using Miscanthus hydrolysates as a medium. The productivity of BC was improved using statistical optimization of the major culture parameters which were as follows: temperature, 29 °C; initial pH, 5.1; and sodium alginate concentration, 0.09% (w/v). The predicted and actual values of BC production in the optimal conditions were 14.07 g/L and 14.88 g/L, respectively, confirming that our prediction model was statistically significant. Additionally, BC production using Miscanthus hydrolysates was 1.12-fold higher than in the control group (commercial glucose). Our result indicate that lignocellulose can be used in the BC production processes in the near future.

Development of Colorimetric Whole-Cell Biosensor for Detection of Heavy Metals in Environment for Public Health.

Heavy metals cause various fetal diseases in humans. Heavy metals from factory wastewater can contaminate drinking water, fish, and crops. Inductively coupled plasma-mass spectrometry (ICP-MS) and atomic absorption spectrometry (AAS) are commonly used to analyze heavy metal contents; however, these methods require pre-treatment processes and are expensive and complex. To overcome these limitations, three metal-sensing materials using a whole-cell biosensor in Escherichia coli (E. coli) were developed. Strains were engineered to harbor three kinds of plasmids containing the copA, zntA, and mer promoters for sensing copper, cadmium, and mercury, respectively. The luciferase (lux) gene was inserted as a reporter into the plasmid, which was later replaced with a fused protein sequence containing OmpA (1-159) and mCherry for optical detection. The constructed strains could detect mercury, cadmium, and copper at 0.1-0.75 ppm, 0.2-0.75 ppm, and 2-7.5 ppm, respectively, with linearity values of 0.99030, 0.99676, and 0.95933, respectively. The immobilization linearity value was 0.99765. Notably, these three heavy metals could be detected by visual analysis of the strains. Overall, these findings establish this novel sensor as a potential approach for heavy metal detection in biological samples and foods.

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC.

It is shown in this work that annealing of Schottky barrier diodes (SBDs) in the form of Ni/AlN/SiC heterojunction devices in an atmosphere of nitrogen and oxygen leads to a significant improvement in the electrical properties of the structures. Compared to the non-annealed device, the on/off ratio of the annealed SBD devices increased by approximately 100 times. The ideality factor, derived from the current-voltage (IV) characterization, decreased by a factor of ~5.1 after annealing, whereas the barrier height increased from ~0.52 to 0.71 eV. The bonding structure of the AlN layer was characterized by X-ray photoelectron spectroscopy. Examination of the N 1 s and O 1 s peaks provided direct indication of the most prevalent chemical bonding states of the elements.

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter.

In this study, static induction transistors (SITs) with beta gallium oxide (ß-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V-1s-1). The gate leakage current is as low as 1.0 × 10-11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices.

Classification of Standing and Walking States Using Ground Reaction Forces.

The operation of wearable robots, such as gait rehabilitation robots, requires real-time classification of the standing or walking state of the wearer. This report explains a technique that measures the ground reaction force (GRF) using an insole device equipped with force sensing resistors, and detects whether the insole wearer is standing or walking based on the measured results. The technique developed in the present study uses the waveform length that represents the sum of the changes in the center of pressure within an arbitrary time window as the determining factor, and applies this factor to a conventional threshold method and an artificial neural network (ANN) model for classification of the standing and walking states. The results showed that applying the newly developed technique could significantly reduce classification errors due to shuffling movements of the patient, typically noticed in the conventional threshold method using GRF, i.e., real-time classification of the standing and walking states is possible in the ANN model. The insole device used in the present study can be applied not only to gait analysis systems used in wearable robot operations, but also as a device for remotely monitoring the activities of daily living of the wearer.

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature Sensors.

In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N2 or O2 gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current-voltage (I-V) curve. The voltage-temperature (V-T) characteristics of the sensor were extracted from the current-voltage-temperature (I-V-T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N2-annealed, and O2-annealed samples, respectively.

Effect of Sacrificial AlN (Aluminum Nitride) Layer on the Deep Surface States of 4H-SiC.

We investigated the effect of a sacrificial AlN layer on the deep energy level states of 4H-SiC surface. The samples with and without AlN layer have been annealed at 1300 °C for 30 minutes duration using a tube furnace. After annealing the samples, the changes of the carbon vacancy (VC) related Z1/2 defect characteristics were analyzed by deep level transient spectroscopy. The trap energy associated with double negative acceptor (VC(2-/0)) appears at ˜0.7 eV and was reduced from ˜0.687 to ˜0.582 eV in the sacrificial AlN layer samples. In addition, the capture cross section was significantly improved from ˜2.1×10-14 to ˜3.8×10-16 cm-2 and the trap concentration was reduced by approximately 40 times.

Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes.

We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 µA, the PiN diode presented the highest sensitivity peak (4.11 mV K-1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K-1 and 1.9 mV K-1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 µA±10 µA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 µA±10 µA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

Effect of ZnO and SnO2 Nanolayers at Grain Boundaries on Thermoelectric Properties of Polycrystalline Skutterudites.

Nanostructuring is considered one of the key approaches to achieve highly efficient thermoelectric alloys by reducing thermal conductivity. In this study, we investigated the effect of oxide (ZnO and SnO2) nanolayers at the grain boundaries of polycrystalline In0.2Yb0.1Co4Sb12 skutterudites on their electrical and thermal transport properties. Skutterudite powders with oxide nanolayers were prepared by atomic layer deposition method, and the number of deposition cycles was varied to control the coating thickness. The coated powders were consolidated by spark plasma sintering. With increasing number of deposition cycle, the electrical conductivity gradually decreased, while the Seebeck coefficient changed insignificantly; this indicates that the carrier mobility decreased due to the oxide nanolayers. In contrast, the lattice thermal conductivity increased with an increase in the number of deposition cycles, demonstrating the reduction in phonon scattering by grain boundaries owing to the oxide nanolayers. Thus, we could easily control the thermoelectric properties of skutterudite materials through adjusting the oxide nanolayer by atomic layer deposition method.

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.

The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density-voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.

Enzymatic Synthesis of Formate Ester through Immobilized Lipase and Its Reuse.

Octyl formate is an important substance used in the perfume industry in products such as cosmetics, perfumes, and flavoring. Octyl formate is mostly produced by chemical catalysts. However, using enzymes as catalysts has gathered increasing interest due to their environment-friendly proprieties. In the present study, we aimed to identify the optimal conditions for the synthesis of octyl formate through immobilized enzyme-mediated esterification. We investigated the effects of enzymatic reaction parameters including the type of immobilized enzyme, enzyme concentration, molar ratio of reactants, reaction temperature, and type of solvent using the optimization method of one factor at a time (OFAT). The maximum conversion achieved was 96.51% with Novozym 435 (15 g/L), a 1:7 formic acid to octanol ratio, a reaction temperature of 40 °C, and with 1,2-dichloroethane as solvent. Moreover, we demonstrated that the Novozym 435 can be reused under the optimal conditions without affecting the octyl formate yield, which could help reduce the economic burden associated with enzymatic synthesis.

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes.

Ga2O3/4H-SiC n-n isotype heterojunction diodes were fabricated by depositing Ga2O3 thin films by RF magnetron sputtering. The influence of annealing atmosphere on the film quality and electrical properties of Ga2O3 layers was investigated. X-ray diffraction (XRD) analysis showed a significant increase in the peak intensities of different faces of ß-Ga2O3 {(-201), (-401) and (002)}. X-ray photoelectron spectroscopy (XPS) measurement showed that the atomic ratio of oxygen increases under high-temperature annealing. Moreover, an N2-annealed diode exhibited a greater rectifying ratio and a lower thermal activation energy owing to the decrease in oxygen-related traps and vacancies on the Ga2O3 film and Ga2O3-metal interface.

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices.

Schottky diode-based temperature sensors are the most common commercially available temperature sensors, and they are attracting increasing interest owing to their higher Schottky barrier height compared to their silicon counterparts. Therefore, this paper presents a comparison of the thermal sensitivity variation trend in temperature sensors, based on dual 4H-SiC junction barrier Schottky (JBS) diodes and Schottky barrier diodes (SBDs). The forward bias current-voltage characteristics were acquired by sweeping the DC bias voltage from 0 to 3 V. The dual JBS sensor exhibited a higher peak sensitivity (4.32 mV/K) than the sensitivity exhibited by the SBD sensor (2.85 mV/K), at temperatures ranging from 298 to 573 K. The JBS sensor exhibited a higher ideality factor and barrier height owing to the p-n junction in JBS devices. The developed sensor showed good repeatability, maintaining a stable output over several cycles of measurements on different days. It is worth noting that the ideality factor and barrier height influenced the forward biased voltage, leading to a higher sensitivity for the JBS device compared to the SBD device. This allows the JBS device to be suitably integrated with SiC power management and control circuitry to create a sensing module capable of working at high temperatures.

Enhanced Electrical Mobilities of Laser Annealed Ga Doped ZnO Thin Films.

In this study, Ga-doped ZnO thin films were prepared, and their potential for transparent conducting oxide applications was assessed. To increase the electrical mobility and reduce the resistance of Ga-doped ZnO thin films, CO2 laser annealing was employed. Recently, the use of transparent conducting oxides (TCOs) have increased, particularly ZnO-based TCOs have been intensively investigated for display applications. To enhance the electrical and optical properties of ZnO thin films, Ga was used as a dopant. First, Ga-doped ZnO thin-film precursors were prepared by the sol-gel method. Subsequently, Ga-doped ZnO thin films were coated on glass substrates by spin coating. Electrical furnace treatment and rapid thermal annealing were employed to obtain and anneal a wurtzite ZnO based structure. The electrical and optical properties of the annealed thin films were optimized by varying the Ga doping concentration. Via Ga doping and optimized laser annealing, the resistivity of the ZnO film could be decreased from 16.32 Ω· cm to 0.45 Ω·cm; notably, the transmittance was similar (85%) in the 380-800 nm range. The transmittance properties of the films are not presented in this paper. Moreover, after an optical CO2 laser annealing process, the conductivity of the films improved by more than 40 times. Furthermore, the electrical properties (mobility, resistivity, and bulk and sheet concentrations) of the CO2-laser-annealed Ga-doped ZnO thin films were optimized.

Possibility of Thermal Energy Recycling Based Light Emitting Diodes Grid System.

Light Emitting Diodes (LED) are highly energy efficient and offer long-life times for display applications. Long life and minimal energy consumption are often the most attractive advantages for electronic devices. Because LEDs are based on compound semiconductors, which explore the direct transition between the conduction and valance band edges, thermal energy loss can be minimized during operation. However, even though these types of LEDs are based on direct transition type semiconductors, thermal energy is still emitted during operation owing to forward conduction and reverse leakage currents. This research proposes capturing this energy loss through thermoelectric module-based energy recycling methods to improve the energy efficiency of LED applications, achieving savings of up to 18%. Additional analysis was performed on high power LED sources resulting in the manufacture of a high-power LED light grid system.

Applicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects.

In this paper, we demonstrated the feasibility of the Aerosol Deposition (AD) method which can be adapted as a future fabrication process for flexible electronic devices. On the basis of this method's noticeable advantages such as room-temperature processing, suitability for mass production, wide material selectivity, and direct fabrication on a flexible substrate, we fabricated and evaluated a flexible conductive bridge random access memory (CBRAM) to confirm the feasibility of this method. The CBRAM was fabricated by the AD-method, and a novel film formation mechanism was observed and analyzed. Considering that the analyzed film formation mechanism is notably different with previously reported for film formation mechanisms of the AD method, these results of study will provide strong guidance for the fabrication of flexible electronic device on ductile substrate.