Macroscopic-ranged proximity effect in graphite.

We report proximity-induced superconducting features over macroscopic lengths in highly oriented pyrolytic graphite. The phenomenon is triggered when electrical currents are injected in the material through superconducting electrodes, few millimeters apart from each other. Such a large range is anomalous, as proximity-induced features in normal conductors hardly surpass few micrometers. The results can be explained as due to the presence of pre-existing superconductivity in graphite on small, localized regions.

Piezoelectric Actuation of Graphene-Coated Polar Structures.

Ferroelectric materials based on lead zirconate titanate (PZT) are widely used as sensors and actuators because of their strong piezoelectric activity. However, their application is limited because of the high processing temperature, brittleness, lack of conformal deposition, and a limited possibility to be integrated with the microelectromechanical systems (MEMS). Recent studies on the piezoelectricity in the 2-D materials have demonstrated their potential in these applications, essentially due to their flexibility and integrability with the MEMS. In this work, we deposited a few layer graphene (FLG) on the amorphous oxidized Si3N4 membranes and studied their piezoelectric response by sensitive laser interferometry and rigorous finite-element modeling (FEM) analysis. Modal analysis by FEM and comparison with the experimental results show that the driving force for the piezoelectric-like response can be a polar interface layer formed between the residual oxygen in Si3N4 and the FLG. The response was about 14 nm/V at resonance and could be further enhanced by adjusting the geometry of the device. These phenomena are fully consistent with the earlier piezoresponse force microscopy (PFM) observations of the piezoelectricity of the graphene on SiO2 and open up an avenue for using graphene-coated structures in the MEMS.

Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

Signatures of electron fractionalization in ultraquantum bismuth.

Because of the long Fermi wavelength of itinerant electrons, the quantum limit of elemental bismuth (unlike most metals) can be attained with a moderate magnetic field. The quantized orbits of electrons shrink with increasing magnetic field. Beyond the quantum limit, the circumference of these orbits becomes shorter than the Fermi wavelength. We studied transport coefficients of a single crystal of bismuth up to 33 tesla, which is deep in this ultraquantum limit. The Nernst coefficient presents three unexpected maxima that are concomitant with quasi-plateaus in the Hall coefficient. The results suggest that this bulk element may host an exotic quantum fluid reminiscent of the one associated with the fractional quantum Hall effect and raise the issue of electron fractionalization in a three-dimensional metal.

Oscillating Nernst-Ettingshausen effect in bismuth across the quantum limit.

In elemental bismuth, 10(5) atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the nonoscillating background. When the first Landau level attains the Fermi energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. These features are yet to be understood. We note a qualitative agreement with a theory invoking current-carrying edge excitations.

Nernst effect in semimetals: the effective mass and the figure of merit.

We present a study of electric, thermal, and thermoelectric transport in elemental bismuth, which presents a Nernst coefficient much larger than what was found in correlated metals. We argue that this is due to the combination of an exceptionally low carrier density with a very long electronic mean-free path. The low thermomagnetic figure of merit is traced to the lightness of electrons. Heavy-electron semimetals, which keep a metallic behavior in the presence of a magnetic field, emerge as promising candidates for thermomagnetic cooling at low temperatures.

Dirac and normal fermions in graphite and graphene: implications of the quantum Hall effect.

Spectral analysis of the Shubnikov-de Haas magnetoresistance oscillations and the quantum Hall effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHEs for bilayer and single-layer graphenes take place simultaneously in HOPG samples.

Phase analysis of quantum oscillations in graphite.

The quantum de Haas-van Alphen (dHvA) and Shubnikov-de Haas oscillations measured in graphite were decomposed by pass-band filtering onto contributions from three different groups of carriers. Generalizing the theory of dHvA oscillations for 2D carriers with an arbitrary spectrum and by detecting the oscillation frequencies using a method of two-dimensional phase-frequency analysis which we developed, we identified these carriers as (i) minority holes having a 2D parabolic massive spectrum p(2)(perpendicular)/2m(perpendicular), (ii) massive majority electrons with a 3D spectrum and (iii) majority holes with a 2D Dirac-like spectrum +/-vp(perpendicular) which seems to be responsible for the unusual strongly-correlated electronic phenomena in graphite.