P-type Inversion at the Surface of ß-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles.

The electric properties and chemical and thermal stability of gallium oxide ß-Ga2O3 make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of ß-Ga2O3 still remains a challenge. A ß-Ga2O3 epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al2O3 substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C2H6S (DMS). After the impregnation of the ß-Ga2O3 epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface.

Morphology of Ga2O3 Nanowires and Their Sensitivity to Volatile Organic Compounds.

Gas sensitive structures made of nanowires exhibit extremally large specific surface area, and a great number of chemically active centres that can react with the ambient atmosphere. This makes the use of nanomaterials promising for super sensitive gas sensor applications. Monoclinic ß-Ga2O3 nanowires (NWs) were synthesized from metallic gallium at atmospheric pressure in the presence of nitrogen and water vapor. The nanowires were grown directly on interdigitated gold electrodes screen printed on Al2O3 substrates, which constituted the gas sensor structure. The observations made with transmission electron microscope (TEM) have shown that the nanowires are monocrystalline and their diameters vary from 80 to 300 nm with the average value of approximately 170 nm. Au droplets were found to be anchored at the tips of the nanowires which may indicate that the nanowires followed the Vapor-Liquid-Solid (VLS) mechanism of growth. The conductivity of ß-Ga2O3 NWs increases in the presence of volatile organic compounds (VOC) even in the temperature below 600 °C. The gas sensor based on the synthesized ß-Ga2O3 NWs shows peak sensitivity to 100 ppm of ethanol of 75.1 at 760 °C, while peak sensitivity to 100 ppm of acetone is 27.5 at 690 °C.