ABSTRACT
The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic.
ABSTRACT
In this study, optical and surface properties of the optically transparent Li3 PO4 solid electrolyte layer for transparent solid battery have been investigated for the first time. To determine the optical properties, transmittance, absorbance, reflection, refractive index spectra, and optical band gap were determined by UV-Vis spectrophotometer and optical interferometer. The surface property of the transparent Li3 PO4 solid electrolyte was analyzed using atomic force microscopy. One another important parameter is contact angle (CA) surface free energy (SFE). CA and SFE were determined by optical tensiometer. These values probably are a most important parameter for polymer and hybrid battery performance. For the best performance, value of CA should be low. As a result, solid electrolyte layer is a highly transparent and it has a high wettability. SCANNING 38:317-321, 2016. © 2015 Wiley Periodicals, Inc.
ABSTRACT
A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016. © 2015 Wiley Periodicals, Inc.
ABSTRACT
In this paper, nanostructured vanadium carbide thin films were deposited on glass substrates and their optical and surface properties were analyzed. All produced samples were transparent in the optical region. Refractive index values were calculated using the Drude model. According to contact angle measurements of the coated surfaces, the samples show high wettability. The surface free energies of the samples were found to be very similar. The influence of the nitrogen content in the buffer gas mixture was determined; it was concluded that the microstructure, refractive index, surface morphology, surface free energy, and thickness of thin films can change in response to the nitrogen concentration of the radio frequency (RF) buffer gas.
