Room-temperature spin injection from Fe into GaAs.

Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.

Self-starting mode locking of a Nd:glass fiber laser by use of the third-order nonlinearity of low-temperature-grown GaAs.

We present a diode-pumped Nd:glass fiber laser, emitting at 1060 nm, that is passively mode locked by fast nonlinear loss in low-temperature-grown GaAs (LT-GaAs). This new mode-locking mechanism is based on intensity-dependent defocusing in LT-GaAs that occurs after nonresonant generation of free carriers by two-photon absorption. Mode locking is self-starting and produces pulses as short as 4.1 ps.