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1.
J Eur Acad Dermatol Venereol ; 29(2): 209-214, 2015 Feb.
Article in English | MEDLINE | ID: mdl-25201706

ABSTRACT

Acute generalized exanthematous pustulosis (AGEP) is an acute drug eruption characterized by erythematous plaques and papules studded with numerous, pinpoint pustules. Several atypical clinical presentations and triggers of AGEP have been described in the literature. These include systemic presentations similar to toxic epidermal necrolysis (TEN) and drug-induced hypersensitivity syndrome (DIHS) and localized presentations mimicking other medication reactions. We herein aim to review atypical presentations and medication triggers of AGEP to assist clinicians in recognizing this condition and making appropriate therapeutic interventions.


Subject(s)
Acute Generalized Exanthematous Pustulosis , Drug-Related Side Effects and Adverse Reactions/complications , Acute Generalized Exanthematous Pustulosis/complications , Acute Generalized Exanthematous Pustulosis/diagnosis , Acute Generalized Exanthematous Pustulosis/pathology , Acute Generalized Exanthematous Pustulosis/therapy , Drug Eruptions/complications , Drug Eruptions/therapy , Drug-Related Side Effects and Adverse Reactions/diagnosis , Drug-Related Side Effects and Adverse Reactions/therapy , Exanthema/complications , Exanthema/diagnosis , Exanthema/therapy , Humans
2.
Nanotechnology ; 23(30): 305201, 2012 Aug 03.
Article in English | MEDLINE | ID: mdl-22750795

ABSTRACT

This paper presents a field-effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. The gate length is L = 2 µm, its width is W = 180 µm, and the source-drain separation is 188 µm, the role of the gate dielectric being played by the surface states of the ultrathin metal layer. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field-effect transistor based on graphene. The drain current is 2 mA at a drain voltage of 3 V and a gate voltage of 1.07 V, while the transconductance is 0.6 mS for a drain voltage of 6 V and a gate voltage of 1 V. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.

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