Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films.

Antiferromagnetic insulators are a prospective materials platform for magnonics, spin superfluidity, THz spintronics, and non-volatile data storage. A magnetomechanical coupling in antiferromagnets offers vast advantages in the control and manipulation of the primary order parameter yet remains largely unexplored. Here, we discover a new member in the family of flexoeffects in thin films of Cr2O3. We demonstrate that a gradient of mechanical strain can impact the magnetic phase transition resulting in the distribution of the Néel temperature along the thickness of a 50-nm-thick film. The inhomogeneous reduction of the antiferromagnetic order parameter induces a flexomagnetic coefficient of about 15 µB nm-2. The antiferromagnetic ordering in the inhomogeneously strained films can persist up to 100 °C, rendering Cr2O3 relevant for industrial electronics applications. Strain gradient in Cr2O3 thin films enables fundamental research on magnetomechanics and thermodynamics of antiferromagnetic solitons, spin waves and artificial spin ice systems in magnetic materials with continuously graded parameters.

Defect Nanostructure and its Impact on Magnetism of α-Cr2 O3 Thin Films.

Thin films of the magnetoelectric insulator α-Cr2 O3 are technologically relevant for energy-efficient magnetic memory devices controlled by electric fields. In contrast to single crystals, the quality of thin Cr2 O3 films is usually compromised by the presence of point defects and their agglomerations at grain boundaries, putting into question their application potential. Here, the impact of the defect nanostructure, including sparse small-volume defects and their complexes is studied on the magnetic properties of Cr2 O3 thin films. By tuning the deposition temperature, the type, size, and relative concentration of defects is tailored, which is analyzed using the positron annihilation spectroscopy complemented with electron microscopy studies. The structural characterization is correlated with magnetotransport measurements and nitrogen-vacancy microscopy of antiferromagnetic domain patterns. Defects pin antiferromagnetic domain walls and stabilize complex multidomain states with a domain size in the sub-micrometer range. Despite their influence on the domain configuration, neither small open-volume defects nor grain boundaries in Cr2 O3 thin films affect the Néel temperature in a broad range of deposition parameters. The results pave the way toward the realization of spin-orbitronic devices where magnetic domain patterns can be tailored based on defect nanostructures without affecting their operation temperature.

Printable and Stretchable Giant Magnetoresistive Sensors for Highly Compliant and Skin-Conformal Electronics.

Highly compliant electronics, naturally conforming to human skin, represent a paradigm shift in the interplay with the surroundings. Solution-processable printing technologies are yet to be developed to comply with requirements to mechanical conformability of on-skin appliances. Here, it is demonstrated that high-performance spintronic elements can be printed on ultrathin 3 µm thick polymeric foils enabling the mechanically imperceptible printed magnetoelectronics, which can adapt to the periodic buckling surface to be biaxially stretched over 100%. They constitute the first example of printed and stretchable giant magnetoresistive sensors, revealing 2 orders of magnitude improvements in mechanical stability and sensitivity at small magnetic fields, compared to the state-of-the-art printed magnetoelectronics. The key enabler of this performance enhancement is the use of elastomeric triblock copolymers as a binder for the magnetosensitive paste. Even when bent to a radius of 16 µm, the sensors printed on ultrathin foils remain intact and possess unmatched sensitivity for printed magnetoelectronics of 3 T-1 in a low magnetic field of 0.88 mT. The compliant printed sensors can be used as components of on-skin interactive electronics as it is demonstrated with a touchless control of virtual objects including zooming in and out of interactive maps and scrolling through electronic documents.

Two Orders of Magnitude Boost in the Detection Limit of Droplet-Based Micro-Magnetofluidics with Planar Hall Effect Sensors.

Magnetofluidics is a dynamic research field, which requires novel sensor solutions to boost the detection limit of tiny quantities of magnetized objects. Here, we present a sensing strategy relying on planar Hall effect sensors in droplet-based micro-magnetofluidics for the detection of a multiphase liquid flow, i.e., superparamagnetic aqueous droplets in an oil carrier phase. The high resolution of the sensor allows the detection of nanoliter-sized superparamagnetic droplets with a concentration of 0.58 mg/cm3, even when they are biased in a geomagnetic field only. The limit of detection can be boosted another order of magnitude, reaching 0.04 mg/cm3 (1.4 million particles in a single 100 nL droplet) when a magnetic field of 5 mT is applied to bias the droplets. With this performance, our sensing platform outperforms the state-of-the-art solutions in droplet-based micro-magnetofluidics by a factor of 100. This allows us to detect ferrofluid droplets in clinically and biologically relevant concentrations and even below without the need of externally applied magnetic fields. These results open the route for new strategies of the utilization of ferrofluids in microfluidic geometries in, e.g., bio(-chemical) or medical applications.

Nanomagnetism of Magnetoelectric Granular Thin-Film Antiferromagnets.

Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared with their ferromagnetic counterparts. Whereas nanoscale thin-film materials are key to the development of future antiferromagnetic spintronic technologies, existing experimental tools tend to suffer from low resolution or expensive and complex equipment requirements. We offer a simple, high-resolution alternative by addressing the ubiquitous surface magnetization of magnetoelectric antiferromagnets in a granular thin-film sample on the nanoscale using single-spin magnetometry in combination with spin-sensitive transport experiments. Specifically, we quantitatively image the evolution of individual nanoscale antiferromagnetic domains in 200 nm thin films of Cr2O3 in real space and across the paramagnet-to-antiferromagnet phase transition, finding an average domain size of 230 nm, several times larger than the average grain size in the film. These experiments allow us to discern key properties of the Cr2O3 thin film, including the boundary magnetic moment density, the variation of critical temperature throughout the film, the mechanism of domain formation, and the strength of exchange coupling between individual grains comprising the film. Our work offers novel insights into the magnetic ordering mechanism of Cr2O3 and firmly establishes single-spin magnetometry as a versatile and widely applicable tool for addressing antiferromagnetic thin films on the nanoscale.

Purely antiferromagnetic magnetoelectric random access memory.

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.

All-Electric Access to the Magnetic-Field-Invariant Magnetization of Antiferromagnets.

The rich physics of thin film antiferromagnets can be harnessed for prospective spintronic devices given that all-electric assessment of the tiny uncompensated magnetic moment is achieved. On the example of magnetoelectric antiferromagnetic Cr2O3, we prove that spinning-current anomalous Hall magnetometry serves as an all-electric method to probe the field-invariant uncompensated magnetization of antiferromagnets. We obtain direct access to the surface magnetization of magnetoelectric antiferromagnets providing a read-out method for ferromagnet-free magnetoelectric memory. Owing to the great sensitivity, the technique bears a strong potential to address the physics of antiferromagnets. Exemplarily, we apply the method to access the criticality of the magnetic transition for an antiferromagnetic thin film. We reveal the presence of field-invariant uncompensated magnetization even in 6-nm-thin IrMn films and clearly distinguish two contributions, of which only the minor one is involved in interfacial magnetic coupling. This approach is likely to advance the fundamental understanding of the anomalous Hall and magnetic proximity effects.

Magnetically capped rolled-up nanomembranes.

Modifying the curvature in magnetic nanostructures is a novel and elegant way toward tailoring physical phenomena at the nanoscale, allowing one to overcome limitations apparent in planar counterparts. Here, we address curvature-driven changes of static magnetic properties in cylindrically curved magnetic segments with different radii of curvature. The curved architectures are prepared by capping nonmagnetic micrometer- and nanometer-sized rolled-up membranes with a soft-magnetic 20 nm thick permalloy (Ni(80)Fe(20)) film. A quantitative comparison between the magnetization reversal processes in caps with different diameters is given. The phase diagrams of magnetic equilibrium domain patterns (diameter versus length) are generated. For this, joint experimental, including X-ray magnetic circular dichroism photoelectron emission microscopy (XMCD-PEEM), and theoretical studies are carried out. The anisotropic magnetostatic interaction in cylindrically curved architectures originating from the thickness gradient reduces substantially the magnetostatic interaction between closely packed curved nanowires. This feature is beneficial for racetrack memory devices, since a much higher areal density might be achieved than possible with planar counterparts.