ABSTRACT
A method for controlling the pretilt angles of liquid crystals (LC) was developed. Hexamethyldisiloxane polymer films were first deposited on indium tin oxide coated glass plates using a linear atmospheric pressure plasma source. The films were subsequently treated with the rubbing method for LC alignment. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy measurements were used to characterize the film composition, which could be varied to control the surface energy by adjusting the monomer feed rate and input power. The results of LC alignment experiments showed that the pretilt angle continuously increased from 0° to 90° with decreasing film surface energy.
ABSTRACT
The fabrication process of Al/diamond Schottky diodes on single crystalline diamond rods (SCDRs) was demonstrated. SCDRs of submicron diameters were obtained by etching a polished polycrystalline diamond film in oxygen plasma. The as-scratched SCDR was confirmed to be single crystalline diamond by electron diffraction measurements showing the same fuzzy spot pattern at different parts of an SCDR. Each SCDR was extracted from a grain in the polycrystalline film where the grain size served as a limit of the length of an SCDR. Al/Ti and Al metals were deposited to form ohmic and Schottky contacts, respectively. A hydrogen plasma treatment is an essential step prior to the formation of an Al/diamond Schottky contact in order to improve the device performance. The submicron scale Al/diamond Schottky diode exhibits a very high current density of 1.4 × 10(4) A cm(-2) at a forward bias (V(F)) voltage of - 3 V.
