Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs.

If light beam propagates through matter containing point impurity centers, the amount of energy absorbed by the media is expected to be either independent of the impurity concentration N or proportional to N, corresponding to the intrinsic absorption or impurity absorption, respectively. Comparative studies of the resonant transmission of light in the vicinity of exciton resonances measured for 15 few-micron GaAs crystal slabs with different values of N, reveal a surprising tendency. While N spans almost five decimal orders of magnitude, the normalized spectrally-integrated absorption of light scales with the impurity concentration as N(1/6). We show analytically that this dependence is a signature of the diffusive mechanism of propagation of exciton-polaritons in a semiconductor.

Suris tetrons: possible spectroscopic evidence for four-particle optical excitations of a two-dimensional electron gas.

The excitations of a two-dimensional electron gas in quantum wells with intermediate carrier density (ne∼1011 cm-2), i.e., between the exciton-trion and the Fermi-sea range, are so far poorly understood. We report on an approach to bridge this gap by a magnetophotoluminescence study of modulation-doped (Cd,Mn)Te quantum well structures. Employing their enhanced spin splitting, we analyzed the characteristic magnetic-field behavior of the individual photoluminescence features. Based on these results and earlier findings by other authors, we present a new approach for understanding the optical transitions at intermediate densities in terms of four-particle excitations, the Suris tetrons, which were up to now only predicted theoretically. All characteristic photoluminescence features are attributed to emission from these quasiparticles when attaining different final states.

Exciton spin decay modified by strong electron-hole exchange interaction.

We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.