Comparing Ammonium and Tetraaminophosphonium Anion-Exchange Membranes Derived from Vinyl-Addition Polynorbornene Copolymers.

Herein, we systematically examined how composition influenced the properties of vinyl addition polynorbornene anion exchange membranes (AEMs) prepared from 5-n-hexyl-2-norbornene and 5-(4-bromobutyl)-2-norbornene. Copolymerization kinetics revealed that 5-n-hexyl-2-norbornene is consumed faster than 5-(4-bromobutyl)-2-norbornene, leading to a portion of the chain being richer in bromoalkyl groups. The alkyl halide pendants can then be converted to either trimethylammonium or tetrakis(dialkylamino)phosphonium cations through straightforward substitution with trimethylamine or a tris(dialkylamino)phosphazene. A series of cationic ammonium polymers were synthesized first, where conductivity and water uptake increased as a function of increasing ionic content in the polymer. The optimized copolymer had a hydroxide conductivity of 95 ± 6 mS/cm at 80 °C. The living polymerization of the two monomers catalyzed by a cationic tert-butylphosphine palladium catalyst also enabled precise changes in the molecular weight while keeping the functional group concentration constant. Molecular weight did not have a significant impact on hydroxide conductivity over the range of ∼60-190 kg/mol (Mn). The optimized tetraaminophosphonium AEM had the highest conductivity for any tetraaminophosphonium polymer to date (70 ± 3 mS/cm at 80 °C). Clear phase separation and larger domains were observed for the phosphonium-based AEM compared to the ammonium at an identical composition, which is attributed to the larger occupied volume of the phosphorus cation. Fuel cell studies with the two membranes resulted in peak power densities of 1.59 and 0.79 W/cm2 for the ammonium and tetraaminophosphonium membrane electrode assemblies, respectively. The ammonium-based membrane was more water permeable as evidenced by water limiting current studies, which likely contributed to the improved performance.

Endotaxial stabilization of 2D charge density waves with long-range order.

Charge density waves are emergent quantum states that spontaneously reduce crystal symmetry, drive metal-insulator transitions, and precede superconductivity. In low-dimensions, distinct quantum states arise, however, thermal fluctuations and external disorder destroy long-range order. Here we stabilize ordered two-dimensional (2D) charge density waves through endotaxial synthesis of confined monolayers of 1T-TaS2. Specifically, an ordered incommensurate charge density wave (oIC-CDW) is realized in 2D with dramatically enhanced amplitude and resistivity. By enhancing CDW order, the hexatic nature of charge density waves becomes observable. Upon heating via in-situ TEM, the CDW continuously melts in a reversible hexatic process wherein topological defects form in the charge density wave. From these results, new regimes of the CDW phase diagram for 1T-TaS2 are derived and consistent with the predicted emergence of vestigial quantum order.

Conjugate Multimode Heat Transfer Analysis of Cryogenic EXLO Manipulation.

In this study, a conjugate radiation/conduction multimode heat transfer analysis of cryogenic focused ion beam (FIB) milling steps necessary for producing ex situ lift out specimens under cryogenic conditions (cryo-EXLO) is performed. Using finite volume for transient heat conduction and enclosure theory for radiation heat transfer, the analysis shows that as long as the specimen is attached or touching the FIB side wall trenches, the specimen will remain vitreous indefinitely, while actively cooled at liquid nitrogen (LN2) temperatures. To simulate the time needed to perform a transfer step to move the bulk sample containing the FIB-thinned specimen from the cryo-FIB to the cryo-EXLO cryostat, the LN2 temperature active cooling is turned off after steady-state conditions are reached and the specimen is monitored over time until the critical devitrification temperature is reached. Under these conditions, the sample will remain vitreous for >3 min, which is more than enough time needed to perform the cryo-transfer step from the FIB to the cryostat, which takes only ∼10 s. Cryo-transmission electron microscopy images of a manipulated cryo-EXLO yeast specimen prepared with cryo-FIB corroborates the heat transfer analysis.

In operando cryo-STEM of pulse-induced charge density wave switching in TaS2.

The charge density wave material 1T-TaS2 exhibits a pulse-induced insulator-to-metal transition, which shows promise for next-generation electronics such as memristive memory and neuromorphic hardware. However, the rational design of TaS2 devices is hindered by a poor understanding of the switching mechanism, the pulse-induced phase, and the influence of material defects. Here, we operate a 2-terminal TaS2 device within a scanning transmission electron microscope at cryogenic temperature, and directly visualize the changing charge density wave structure with nanoscale spatial resolution and down to 300 µs temporal resolution. We show that the pulse-induced transition is driven by Joule heating, and that the pulse-induced state corresponds to the nearly commensurate and incommensurate charge density wave phases, depending on the applied voltage amplitude. With our in operando cryogenic electron microscopy experiments, we directly correlate the charge density wave structure with the device resistance, and show that dislocations significantly impact device performance. This work resolves fundamental questions of resistive switching in TaS2 devices, critical for engineering reliable and scalable TaS2 electronics.

Synthesis of graded CdS1-xSex nanoplatelet alloys and heterostructures from pairs of chalcogenoureas with tailored conversion reactivity.

A mixture of N,N,N'-trisubstituted thiourea and cyclic N,N,N',N'-tetrasubstituted selenourea precursors were used to synthesize three monolayer thick CdS1-xSex nanoplatelets in a single synthetic step. The microstructure of the nanoplatelets could be tuned from homogeneous alloys, to graded alloys to core/crown heterostructures depending on the relative conversion reactivity of the sulfur and selenium precursors. UV-visible absorption and photoluminescence spectroscopy and scanning transmission electron microscopy electron energy loss spectroscopy (STEM-EELS) images demonstrate that the elemental distribution is governed by the relative precursor conversion kinetics. Slow conversion kinetics produced nanoplatelets with larger lateral dimensions, behavior that is characteristic of precursor conversion limited growth kinetics. Across a 10-fold range of reactivity, CdS nanoplatelets have 4× smaller lateral dimensions than CdSe nanoplatelets grown under identical conversion kinetics. The difference in size is consistent with a rate of CdSe growth that is 4× greater than the rate of CdS. The influence of the relative sulfide and selenide growth rates, the duration of the nucleation phase, and the solute composition on the nanoplatelet microstructure are discussed.

Heterogeneity in Cation Exchange Ag+ Doping of CdSe Nanocrystals.

Cation exchange is becoming extensively used for nanocrystal (NC) doping in order to produce NCs with unique optical and electronic properties. However, despite its ever-increasing use, the relationships between the cation exchange process, its doped NC products, and the resulting NC photophysics are not well characterized. For example, similar doping procedures on NCs with the same chemical compositions have resulted in quite different photophysics. Through a detailed single molecule investigation of a postsynthesis Ag+ doping of CdSe NCs, a number of species were identified within a single doped NC sample, suggesting the differences in the optical properties of the various synthesis methods are due to the varied contributions of each species. Electrostatic force microscopy (EFM), electron energy loss spectroscopy (EELS) mapping, and single molecule photoluminescence (PL) studies were used to identify four possible species resulting from the Ag+-CdSe cation exchange doping process. The heterogeneity of these samples shows the difficulty in controlling a postsynthesis cation exchange method to produce homogeneous samples needed for use in any potential application. Additionally, the heterogeneity in the doped samples demonstrates that significant care must be taken in describing the ensemble or average characteristics of the sample.

Emergent layer stacking arrangements in c-axis confined MoTe2.

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe2 possesses two stacking arrangements, the ferroelectric Weyl semimetal Td phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe2, it is unclear if the layer stacking follows the Td, 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe2 layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and Td domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe2 stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe2 flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3.

The alkaline earth stannates are touted for their wide band gaps and the highest room-temperature electron mobilities among all of the perovskite oxides. CaSnO3 has the highest measured band gap in this family and is thus a particularly promising ultrawide band gap semiconductor. However, discouraging results from previous theoretical studies and failed doping attempts had described this material as "undopable". Here we redeem CaSnO3 using hybrid molecular beam epitaxy, which provides an adsorption-controlled growth for the phase-pure, epitaxial, and stoichiometric CaSnO3 films. By introducing lanthanum (La) as an n-type dopant, we demonstrate the robust and predictable doping of CaSnO3 with free electron concentrations, n3D, from 3.3 × 1019 cm-3 to 1.6 × 1020 cm-3. The films exhibit a maximum room-temperature mobility of 42 cm2 V-1 s-1 at n3D = 3.3 × 1019 cm-3. Despite having a comparable radius as the host ion, La expands the lattice parameter. Using density functional calculations, this effect is attributed to the energy gain by lowering the conduction band upon volume expansion. Finally, we exploit robust doping by fabricating CaSnO3-based field-effect transistors. The transistors show promise for CaSnO3's high-voltage capabilities by exhibiting low off-state leakage below 2 × 10-5 mA/mm at a drain-source voltage of 100 V and on-off ratios exceeding 106. This work serves as a starting point for future studies on the semiconducting properties of CaSnO3 and many devices that could benefit from CaSnO3's exceptionally wide band gap.