ABSTRACT
Single-walled carbon nanotubes theoretically possess ultimate intrinsic tensile strengths in the 100-200 GPa range, among the highest in existing materials. However, all of the experimentally reported values are considerably lower and exhibit a considerable degree of scatter, with the lack of structural information inhibiting constraints on their associated mechanisms. Here, we report the first experimental measurements of the ultimate tensile strengths of individual structure-defined, single-walled carbon nanotubes. The strength depends on the chiral structure of the nanotube, with small-diameter, near-armchair nanotubes exhibiting the highest tensile strengths. This observed structural dependence is comprehensively understood via the intrinsic structure-dependent inter-atomic stress, with its concentration at structural defects inevitably existing in real nanotubes. These findings highlight the target nanotube structures that should be synthesized when attempting to fabricate the strongest materials.
ABSTRACT
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.
