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1.
Small ; 19(49): e2304872, 2023 Dec.
Article in English | MEDLINE | ID: mdl-37594722

ABSTRACT

Charge ordering (CO) phenomena have been widely debated in strongly-correlated electron systems mainly regarding their role in high-temperature superconductivity. Here, the structural and charge distribution in NdNiO2 thin films prepared with and without capping layers, and characterized by the absence and presence of CO are elucidated. The microstructural and spectroscopic analysis is done by scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) and hard X-ray photoemission spectroscopy (HAXPES). Capped samples show Ni1+ , with an out-of-plane (o-o-p) lattice parameter of around 3.30 Å indicating good stabilization of the infinite-layer structure. Bulk-sensitive HAXPES on Ni-2p shows weak satellite features indicating large charge-transfer energy. The uncapped samples evidence an increase of the o-o-p parameter up to 3.65 Å on the thin film top with a valence toward Ni2+ in this region. Here, 4D-STEM demonstrates (303)-oriented stripes which emerge from partially occupied apical oxygen. Those stripes form quasi-2D coherent domains viewed as rods in the reciprocal space with Δqz ≈ 0.24 reciprocal lattice units (r.l.u.) extension located at Q = ( ± 1 3 , 0 , ± 1 3 $\pm \frac{1}{3},0,\pm \frac{1}{3}$ ) and ( ± 2 3 , 0 , ± 2 3 $\pm \frac{2}{3},0,\pm \frac{2}{3}$ ) r.l.u. The stripes associated with oxygen re-intercalation concomitant with hole doping suggest a possible link to the previously reported CO in infinite-layer nickelate thin films.

2.
Adv Sci (Weinh) ; 9(27): e2201753, 2022 09.
Article in English | MEDLINE | ID: mdl-35901494

ABSTRACT

Resistive switching effects offer new opportunities in the field of conventional memories as well as in the booming area of neuromorphic computing. Here the authors demonstrate memristive switching effects produced by a redox-driven oxygen exchange in tunnel junctions based on NdNiO3 , a strongly correlated electron system characterized by the presence of a metal-to-insulator transition (MIT). Strikingly, a strong interplay exists between the MIT and the redox mechanism, which on the one hand modifies the MIT itself, and on the other hand radically affects the tunnel resistance switching and the resistance states' lifetime. That results in a very unique temperature behavior and endows the junctions with multiple degrees of freedom. The obtained results bring up fundamental questions on the interplay between electronic correlations and the creation and mobility of oxygen vacancies in nickelates, opening a new avenue toward mimicking neuromorphic functions by exploiting the electric-field control of correlated states.


Subject(s)
Electrons , Oxygen , Electronics , Metals
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