1.
Nanoscale Res Lett
; 5(12): 1878-81, 2010 Sep 02.
Article
in English
| MEDLINE
| ID: mdl-21170140
ABSTRACT
Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.