Coherent interaction of atoms with a beam of light confined in a light cage.

Controlling coherent interaction between optical fields and quantum systems in scalable, integrated platforms is essential for quantum technologies. Miniaturised, warm alkali-vapour cells integrated with on-chip photonic devices represent an attractive system, in particular for delay or storage of a single-photon quantum state. Hollow-core fibres or planar waveguides are widely used to confine light over long distances enhancing light-matter interaction in atomic-vapour cells. However, they suffer from inefficient filling times, enhanced dephasing for atoms near the surfaces, and limited light-matter overlap. We report here on the observation of modified electromagnetically induced transparency for a non-diffractive beam of light in an on-chip, laterally-accessible hollow-core light cage. Atomic layer deposition of an alumina nanofilm onto the light-cage structure was utilised to precisely tune the high-transmission spectral region of the light-cage mode to the operation wavelength of the atomic transition, while additionally protecting the polymer against the corrosive alkali vapour. The experiments show strong, coherent light-matter coupling over lengths substantially exceeding the Rayleigh range. Additionally, the stable non-degrading performance and extreme versatility of the light cage provide an excellent basis for a manifold of quantum-storage and quantum-nonlinear applications, highlighting it as a compelling candidate for all-on-chip, integrable, low-cost, vapour-based photon delay.

An efficient, tunable, and robust source of narrow-band photon pairs at the 87Rb D1 line.

We present an efficient and robust source of photons at the 87Rb D1-line (795 nm) with a narrow bandwidth of δ = 226(1) MHz. The source is based on non-degenerate, cavity-enhanced spontaneous parametric down-conversion in a monolithic optical parametric oscillator far below threshold. The setup allows for efficient coupling to single mode fibers. A heralding efficiency of ηheralded = 45(5) % is achieved, and the uncorrected number of detected photon pairs is 3.8 × 103/(s mW). For pair generation rates up to 5 × 105/s, the source emits heralded single photons with a normalized, heralded, second-order correlation function g c(2)<0.01. The source is intrinsically stable due to the monolithic configuration. Frequency drifts are on the order of δ/20 per hour without active feedback on the emission frequency. We achieved fine-tuning of the source frequency within a range of >2 GHz by applying mechanical strain.

Slow and fast single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line.

Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single-photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D1 transition. The delay of spectral components of the single-photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, "slow light" and "fast light" behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network.

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature.

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.