Molecular ion sources for low energy semiconductor ion implantation (invited).

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.

Development of the ion source for cluster implantation.

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Project of electro-cyclotron resonance ion source test-bench for material investigation.

Development of new materials for future energy facilities with higher operating efficiency is a challenging and crucial task. However, full-scale testing of radiation hardness for reactor materials is quite sophisticated and difficult as it requires long session of reactor irradiation; moreover, induced radioactivity considerably complicates further investigation. Ion beam irradiation does not have such a drawback; on the contrary, it has certain advantages. One of them is high speed of defect formation. Therefore, it provides a useful tool for modeling of different radiation damages. Improved understanding of material behavior under high dose irradiation will probably allow to simulate reactor irradiation close to real conditions and to make an adequate estimation of material radiation hardness. Since 2008 in Institute for Theoretical and Experimental Physics, the ion beam irradiation experiments are under development at the heavy ion radio frequency quadrupole linac and very important results are obtained already [T. V. Kulevoy et al., in Proceedings of the International Topical Meeting on Nuclear Research Applications and Utilization of Accelerators, IAEA Vienna, Austria, 2009, http://www.pub.iaea.org/MTCD/publications/PDF/P1433_CD/darasets/papers/ap_p5_07.pdf]. Nevertheless, the new test bench based on electro-cyclotron resonance ion source and high voltage platform is developed. The project of the test bench is presented and discussed.

Numerical simulation of gridded electrostatic lens.

Gridded electrostatic lenses are frequently used in extraction systems and low energy ion beam transport line. Typically, for numerical simulation the grid is treated as a metal plate transparent for beam particles. The influence of real grid geometry on the beam dynamics in the gridded lens has been investigated by KOBRA-3d code. Beam emittance growth for different lens parameters has been investigated. Approximating expressions for obtained results are presented. The grid geometry providing minimal beam distortions is proposed.

Portable emittance measurement device.

In Institute for Theoretical and Experimental Physics (ITEP) the portable emittance measurements device is developed. It provides emittance measurements both with "pepper-pot" and "two slits" methods. Depending on the method of measurements, either slits or pepper-pot mask with scintillator are mounted on the two activators and are installed in two standard Balzer's cross chamber with CF-100 flanges. To match the angle resolution for measured beam, the length of the stainless steel pipe between two crosses changes is adjusted. The description of the device and results of emittance measurements at the ITEP ion source test bench are presented.

Carborane beam from ITEP Bernas ion source for semiconductor implanters.

A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C(2)B(10)H(12)) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

ITEP MEVVA ion beam for rhenium silicide production.

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

ITEP MEVVA ion beam for reactor material investigation.

Since 2008 the ion beam irradiation modeling experiments for the testing of reactor materials radiation hardness are under development at the ITEP heavy ion RFQ injector with MEVVA ion source. Ion beam irradiation method has certain advantages for such tests. One of them is high speed of defect formation. Moreover, the irradiated samples can be investigated by traditional investigation methodic because they have not radioactivity induced. The special sample support with electrostatic deflector was constructed and installed at the injector output. The result of ion beam dynamics simulation throughout the deflector as well as the detailed description of the test facility is presented. The first experimental results are presented as well. They have been demonstrated promising results.

Front-end simulation of injector for terawatt accumulator.

A terawatt accumulator (TWAC) accelerator/storage ring complex with the laser ion source is in progress at ITEP. The new injector I4 based on the radio frequency quadrupole (RFQ) and interdigital H-mode (IH) linear accelerator is under construction. The front end of the new TWAC injector consists of a laser ion source, an extraction system, and a low energy beam transport (LEBT). The KOBRA3-INP was used for the simulation and optimization of the ion source extraction system. The optimization parameter is the maximum brightness of the beam generated by the laser ion source. Also the KOBRA3-INP code was used for LEBT investigation. The LEBT based on electrostatic grid lenses is chosen for injector I4. The results of the extraction system and LEBT investigations for ion beam matching with RFQ are presented.

Ion sources for energy extremes of ion implantation.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.