ABSTRACT
Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD lasers and the limited size due to mechanical exfoliation presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present room temperature lasing from a large-area tungsten disulfide (WS2) monolayer, grown by a wafer-scale chemical vapor deposition (CVD) technique. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission, resulting in an ultralow threshold operation (threshold well below 1 W/cm2). We provide a thorough study of the laser performance, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 µm, which is several times greater than what has been reported for 2D material lasers so far. Our realization of a single-mode laser from a CVD-grown monolayer presents exciting opportunities for integration and the development of real-world applications.
ABSTRACT
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets exhibits a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of ultra-thin tin films therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.
ABSTRACT
A promising strategy toward ultrathin, sensitive photodetectors is the combination of a photoactive semiconducting transition-metal dichalcogenide (TMDC) monolayer like MoS2 with highly conductive graphene. Such devices often exhibit a complex and contradictory photoresponse as incident light can trigger both photoconductivity and photoinduced desorption of molecules from the surface. Here, we use metal-organic chemical vapor deposition (MOCVD) to directly grow MoS2 on top of graphene that is deposited on a sapphire wafer via chemical vapor deposition (CVD) for realizing graphene-MoS2 photodetectors. Two-color optical pump-electrical probe experiments allow for separation of light-induced carrier transfer across the graphene-MoS2 heterointerface from adsorbate-induced effects. We demonstrate that adsorbates strongly modify both magnitude and sign of the photoconductivity. This is attributed to a change of the graphene doping from p- to n-type in case adsorbates are being desorbed, while in either case, photogenerated electrons are transferred from MoS2 to graphene. This nondestructive probing method sheds light on the charge carrier transfer mechanisms and the role of adsorbates in two-dimensional (2D) heterostructure photodetectors.
ABSTRACT
Three novel donor-acceptor molecules comprising the underexplored pyridazine (Pydz) acceptor moiety have been synthesized and their structural, electrochemical and photophysical properties thoroughly characterized. Combining Pydz with two phenoxazine donor units linked via a phenyl bridge in a meta configuration (dPXZMePydz) leads to high reverse intersystem crossing rate k RISC = 3.9 · 106 s-1 and fast thermally activated delayed fluorescence (TADF) with <500 ns delayed emission lifetime. Efficient triplet harvesting via the TADF mechanism is demonstrated in OLEDs using dPXZMePydz as the emitter but does not occur for compounds bearing weaker donor units.
ABSTRACT
High-efficiency pure blue phosphorescent organic light-emitting diodes (OLEDs) remain one of the grand challenges, principally because the emissive complexes employed either do not possess sufficiently high photoluminescence quantum yields or exhibit unsatisfactory Commission International de l'Éclairage (CIE) coordinates. Here two deep-blue-emitting homoleptic iridium(III) complexes are reported and OLEDs are demonstrated with CIE coordinates of (0.15, 0.05) and maximum external quantum efficiency of 13.4%, which decreases slightly to 12.5% at 100 cd m-2 . They represent examples of the most efficient OLEDs surpassing the CIEy requirement of the National Television System Committee (NTSC) and the European Broadcasting Union (EBU). Emitter orientation contributes to the excellent device performance.
ABSTRACT
A series of four novel deep-blue to sky-blue thermally activated delayed fluorescence (TADF) emitters (2CzdOXDMe, 2CzdOXD4MeOPh, 2CzdOXDPh, and 2CzdOXD4CF3Ph) have been synthesized and characterized. These oxadiazole-based emitters demonstrated bluer emission compared with the reference emitter 2CzPN thanks to the weaker acceptor strength of the oxadiazole moieties. The oxadiazole compounds doped in hosts (mCP and PPT) emitted from 435 to 474 nm with photoluminescence quantum yields ranging from 14-55%. The emitters possess singlet-triplet excited-state energy gaps (Δ EST) between 0.25 and 0.46 eV resulting in delayed components ranging from 4.8 to 25.8 ms. The OLED device with 2CzdOXD4CF3Ph shows a maximum external quantum efficiency of 11.2% with a sky-blue emission at CIE of (0.17, 0.25), while the device with 2CzdOXD4MeOPh shows a maximum external quantum efficiency of 6.6% with a deep-blue emission at CIE of (0.15, 0.11).
ABSTRACT
White organic light-emitting diodes (OLEDs) are promising candidates for future solid-state lighting applications and backplane illumination in large-area displays. One very specific feature of OLEDs, which is currently gaining momentum, is that they can enable tunable white light emission. This feature is conventionally realized either through the vertical stacking of independent OLEDs emitting different colors or in lateral arrangement of OLEDs. The vertical design is optically difficult to optimize and often results in efficiency compromises between the units. In contrast, the lateral concept introduces severe area losses to dark regions between the subunits, which requires a significantly larger overall device area to achieve equal brightness. Here we demonstrate a color-tunable, two-color OLED device realized by side-by-side alignment of yellow and blue p-i-n OLEDs structured down to 20 µm by a simple and up-scalable orthogonal photolithography technique. This layout eliminates the problems of conventional lateral approaches by utilizing all area for light emission. The corresponding emission of the photo-patterned two-unit OLED can be tuned over a wide range from yellow to white to blue colors. The independent control of the different units allows the desired overall spectrum to be set at any given brightness level. Operated as a white light source, the microstructured OLED reaches a luminous efficacy of 13 lm W-1 at 1000 cd m-2 without an additional light outcoupling enhancement and reaches a color rendering index of 68 when operated near the color point E. Finally, we demonstrate an improved device lifetime by means of size variation of the subunits.
