1.
Micron
; 134: 102864, 2020 Jul.
Article
in English
| MEDLINE
| ID: mdl-32251927
ABSTRACT
A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3×1019cm-3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).
2.
Phys Rev B Condens Matter
; 49(18): 12464-12474, 1994 May 01.
Article
in English
| MEDLINE
| ID: mdl-10010147