Ultrasensitive Detection of PSA Using Antibodies in Crowding Polyelectrolyte Multilayers on a Silicon Nanowire Field-Effect Transistor.

Immunosensors based on field-effect transistors with nanowire channels (NWFETs) provide fast and real-time detection of a variety of biomarkers without the need for additional labels. The key feature of the developed immunosensor is the coating of silicon NWs with multilayers of polyelectrolytes (polyethylenimine (PEI) and polystyrene sulfonate (PSS)). By causing a macromolecular crowding effect, it ensures the "soft fixation" of the antibodies into the 3-D matrix of the oppositely charged layers. We investigated the interaction of prostate-specific antigen (PSA), a biomarker of prostate cancer, and antibodies adsorbed in the PEI and PSS matrix. In order to visualize the formation of immune complexes between polyelectrolyte layers using SEM and AFM techniques, we employed a second clone of antibodies labeled with gold nanoparticles. PSA was able to penetrate the matrix and concentrate close to the surface layer, which is crucial for its detection on the nanowires. Additionally, this provides the optimal orientation of the antibodies' active centers for interacting with the antigen and improves their mobility. NWFETs were fabricated from SOI material using high-resolution e-beam lithography, thin film vacuum deposition, and reactive-ion etching processes. The immunosensor was characterized by a high sensitivity to pH (71 mV/pH) and an ultra-low limit of detection (LOD) of 0.04 fg/mL for PSA. The response of the immunosensor takes less than a minute, and the measurement is carried out in real time. This approach seems promising for further investigation of its applicability for early screening of prostate cancer and POC systems.

A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator.

BACKGROUND: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented. RESULTS: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode. CONCLUSION: The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.