Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits.

Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP2S6) layer. Controlling the state encoded in the program gate enables switching between p, n, and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 106 and hysteresis windows of up to 10 V width. The homojunction can change from Ohmic-like to diode behavior with a large rectification ratio of 104. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy-harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with a long retention time exceeding 104 s. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key nonvolatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates high compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit promising potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.

Assessing the Role of the Kohn-Sham Density in the Calculation of the Low-Lying Bethe-Salpeter Excitation Energies.

We adopt the GW many-body perturbation theory in conjunction with the Bethe-Salpeter equation (BSE) to compute 57 excitation energies of a set of 37 molecules. By using the PBEh global hybrid functional and a self-consistent scheme on the eigenvalues in GW, we show a strong dependence of the BSE energy on the starting Kohn-Sham (KS) density functional. This arises from both the quasiparticle energies and the spatial localization of the frozen KS orbitals employed to compute the BSE. In order to address the arbitrariness in the mean field choice, we adopt an orbital-tuning scheme where the amount of Fock exchange, α, is tuned to impose that the KS HOMO matches the GW quasiparticle eigenvalue, thus fulfilling the ionization potential theorem in DFT. The performance of the proposed scheme yields excellent results and it is similar to M06-2X and PBEh with α = 75%, consistent with tuned values of α ranging between 60% and 80%.

Twin boundary migration in an individual platinum nanocrystal during catalytic CO oxidation.

At the nanoscale, elastic strain and crystal defects largely influence the properties and functionalities of materials. The ability to predict the structural evolution of catalytic nanocrystals during the reaction is of primary importance for catalyst design. However, to date, imaging and characterising the structure of defects inside a nanocrystal in three-dimensions and in situ during reaction has remained a challenge. We report here an unusual twin boundary migration process in a single platinum nanoparticle during CO oxidation using Bragg coherent diffraction imaging as the characterisation tool. Density functional theory calculations show that twin migration can be correlated with the relative change in the interfacial energies of the free surfaces exposed to CO. The x-ray technique also reveals particle reshaping during the reaction. In situ and non-invasive structural characterisation of defects during reaction opens new avenues for understanding defect behaviour in confined crystals and paves the way for strain and defect engineering.

Strongly Bound Excitons in Metal-Organic Framework MOF-5: A Many-Body Perturbation Theory Study.

During the past years, one of the most iconic metal-organic frameworks (MOFs), MOF-5, has been characterized as a semiconductor by theory and experiments. Here we employ the GW many-body perturbation theory in conjunction with the Bethe-Salpeter equation to compute the electronic structure and optical properties of this MOF. The GW calculations show that MOF-5 is a wide-band-gap insulator with a fundamental gap of ∼8 eV. The strong excitonic effects, arising from highly localized states and low screening, result in an optical gap of 4.5 eV and in an optical absorption spectrum in excellent agreement with experiments. The origin of the incorrect conclusion reported by past studies and the implication of this result are also discussed.

Accurate Prediction of the S1 Excitation Energy in Solvated Azobenzene Derivatives via Embedded Orbital-Tuned Bethe-Salpeter Calculations.

By employing the Bethe-Salpeter formalism coupled with a nonequilibrium embedding scheme, we demonstrate that the paradigmatic case of S1 band separation between cis and trans in azobenzene derivatives can be computed with excellent accuracy compared to experimental optical spectra. Besides embedding, we show that the choice of the Kohn-Sham exchange correlation functional for DFT is critical, despite the iterative convergence of GW quasiparticle energies. We address this by adopting an orbital-tuning approach via the global hybrid functional, PBEh, yielding an environment-consistent ionization potential. The vertical excitation energy of 20 azo molecules is predicted with a mean absolute error as low as 0.06 eV, up to three times smaller compared to standard functionals such as M06-2X and PBE0, and five times smaller compared to recent TDDFT results.

Tuning Gas Adsorption by Metal Node Blocking in Photoresponsive Metal-Organic Frameworks.

By combining first-principles calculations and classical molecular simulations, an atomistic-level of understanding was provided towards the notable change in CO2 adsorption upon light treatment in two recently reported photoactive metal-organic frameworks, PCN-123 and Cu2 (AzoBPDC)2 (AzoBiPyB). It was demonstrated that the reversible decrease in gas adsorption upon isomerization can be primarily attributed to the blocking of the strong adsorbing sites at the metal nodes by azobenzene molecules in a cis configuration. The same mechanism was found to apply also to other molecules, for example, alkanes and toxic gases. Such understandings are instrumental to the future design of photoresponsive metal-organic frameworks. For example, the metal node-blocking mechanism can be leveraged to achieve optimal adsorption properties as a function of metal substitution and/or ligand functionalization. As a proof of concept, it was shown that the working capacity could be increased by a factor of two in PCN-123 by replacing the Zn4 O node with the more strongly adsorbing Mg4 O.