Quantum bath suppression in a superconducting circuit by immersion cooling.

Quantum circuits interact with the environment via several temperature-dependent degrees of freedom. Multiple experiments to-date have shown that most properties of superconducting devices appear to plateau out at T ≈ 50 mK - far above the refrigerator base temperature. This is for example reflected in the thermal state population of qubits, in excess numbers of quasiparticles, and polarisation of surface spins - factors contributing to reduced coherence. We demonstrate how to remove this thermal constraint by operating a circuit immersed in liquid 3He. This allows to efficiently cool the decohering environment of a superconducting resonator, and we see a continuous change in measured physical quantities down to previously unexplored sub-mK temperatures. The 3He acts as a heat sink which increases the energy relaxation rate of the quantum bath coupled to the circuit a thousand times, yet the suppressed bath does not introduce additional circuit losses or noise. Such quantum bath suppression can reduce decoherence in quantum circuits and opens a route for both thermal and coherence management in quantum processors.

Bottom-Up Growth of Monolayer Honeycomb SiC.

The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While sp^{2} bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200 °C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity.

Spin-Echo Silencing Using a Current-Biased Frequency-Tunable Resonator.

The ability to control microwave emission from a spin ensemble is a requirement of several quantum memory protocols. Here, we demonstrate such ability by using a resonator whose frequency can be rapidly tuned with a bias current. We store excitations in an ensemble of rare-earth ions and suppress on demand the echo emission ("echo silencing") by two methods: (1) detuning the resonator during the spin rephasing, and (2) subjecting spins to magnetic field gradients generated by the bias current itself. We also show that spin coherence is preserved during silencing.

Two-level systems in superconducting quantum devices due to trapped quasiparticles.

A major issue for the implementation of large-scale superconducting quantum circuits is the interaction with interfacial two-level system (TLS) defects that lead to qubit parameter fluctuations and relaxation. Another major challenge comes from nonequilibrium quasiparticles (QPs) that result in qubit relaxation and dephasing. Here, we reveal a previously unexplored decoherence mechanism in the form of a new type of TLS originating from trapped QPs, which can induce qubit relaxation. Using spectral, temporal, thermal, and magnetic field mapping of TLS-induced fluctuations in frequency tunable resonators, we identify a highly coherent subset of the general TLS population with a low reconfiguration temperature ∼300 mK and a nonuniform density of states. These properties can be understood if the TLS are formed by QPs trapped in shallow subgap states formed by spatial fluctutations of the superconducting order parameter. This implies that even very rare QP bursts will affect coherence over exponentially long time scales.

Near-Field Scanning Microwave Microscopy in the Single Photon Regime.

The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to 109 times lower power than in typical NSMMs. We discuss the remaining challenges towards developing nano-scale NSMM for quantum coherent interaction with two-level systems as an enabling tool for the development of quantum technologies in the microwave regime.

Suppression of low-frequency charge noise in superconducting resonators by surface spin desorption.

Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge about their chemical and physical nature. Here, by combining dielectric loss, frequency noise and on-chip electron spin resonance measurements in superconducting resonators, we demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the charge-induced frequency noise in the resonators. These measurements provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and highlights their role in generating charge noise in solid-state quantum devices.

Direct Identification of Dilute Surface Spins on Al_{2}O_{3}: Origin of Flux Noise in Quantum Circuits.

An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al_{2}O_{3}. We measure a spin density of 2.2×10^{17} spins/m^{2}, attributed to physisorbed atomic hydrogen and S=1/2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.

Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene.

Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.

Coherent interaction with two-level fluctuators using near field scanning microwave microscopy.

Near field Scanning Microwave Microscopy (NSMM) is a scanning probe technique that non-invasively can obtain material properties on the nano-scale at microwave frequencies. While focus has been on developing room-temperature systems it was recently shown that this technique can potentially reach the quantum regime, opening up for applications in materials science and device characterization in solid state quantum information processing. In this paper we theoretically investigate this new regime of NSMM. Specifically we show that interaction between a resonant NSMM probe and certain types of two-level systems become possible when the NSMM probe operates in the (sub-) single photon regime, and we expect a high signal-to-noise ratio if operated under the right conditions. This would allow to detect single atomic material defects with energy splittings in the GHz range with nano-scale resolution, provided that individual defects in the material under study are well enough separated. We estimate that this condition is fulfilled for materials with loss tangents below tan δ ∼ 10(-3) which holds for materials used in today's quantum circuits and devices where typically tan δ < 10(-5). We also propose several extensions to a resonant NSMM that could improve sensitivity and functionality also for microscopes operating in a high power regime.

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene.

Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of T(4) at carrier temperatures from 1.4 K up to ∼100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence n(e)(-1.5) in the scaling of the T(4) power law is observed in bilayer graphene, in contrast to the n(e)(-0.5) dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems.

Quantum resistance metrology using graphene.

In this paper, we review the recent extraordinary progress in the development of a new quantum standard for resistance based on graphene. We discuss the unique properties of this material system relating to resistance metrology and discuss results of the recent highest-ever precision direct comparison of the Hall resistance between graphene and traditional GaAs. We mainly focus our review on graphene expitaxially grown on SiC, a system which so far resulted in the best results. We also briefly discuss progress in the two other graphene material systems, exfoliated graphene and chemical vapour deposition graphene, and make a critical comparison with SiC graphene. Finally, we discuss other possible applications of graphene in metrology.

Charge qubit coupled to an intense microwave electromagnetic field in a superconducting Nb device: evidence for photon-assisted quasiparticle tunneling.

We study a superconducting charge qubit coupled to an intensive electromagnetic field and probe changes in the resonance frequency of the formed dressed states. At large driving strengths, exceeding the qubit energy-level splitting, this reveals the well known Landau-Zener-Stückelberg interference structure of a longitudinally driven two-level system. For even stronger drives, we observe a significant change in the Landau-Zener-Stückelberg pattern and contrast. We attribute this to photon-assisted quasiparticle tunneling in the qubit. This results in the recovery of the qubit parity, eliminating effects of quasiparticle poisoning, and leads to an enhanced interferometric response. The interference pattern becomes robust to quasiparticle poisoning and has a good potential for accurate charge sensing.

Phase space for the breakdown of the quantum Hall effect in epitaxial graphene.

We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I(c)) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρ(xx)=0) shows a [1-(T/T(c))2] dependence and persists up to T(c)>45 K at 29 T. With magnetic field I(c) was found to increase ∝B(3/2) and T(c)∝B2. As the Fermi energy pproaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.

A near-field scanning microwave microscope based on a superconducting resonator for low power measurements.

We report on the design and performance of a cryogenic (300 mK) near-field scanning microwave microscope. It uses a microwave resonator as the near-field sensor, operating at a frequency of 6 GHz and microwave probing amplitudes down to 100 µV, approaching low enough photon population (N ∼ 1000) of the resonator such that coherent quantum manipulation becomes feasible. The resonator is made out of a miniaturized distributed fractal superconducting circuit that is integrated with the probing tip, micromachined to be compact enough such that it can be mounted directly on a quartz tuning-fork, and used for parallel operation as an atomic force microscope (AFM). The resonator is magnetically coupled to a transmission line for readout, and to achieve enhanced sensitivity we employ a Pound-Drever-Hall measurement scheme to lock to the resonance frequency. We achieve a well localized near-field around the tip such that the microwave resolution is comparable to the AFM resolution, and a capacitive sensitivity down to 6.4 × 10(-20) F/Hz, limited by mechanical noise. We believe that the results presented here are a significant step towards probing quantum systems at the nanoscale using near-field scanning microwave microscopy.

Magnetic quantum ratchet effect in graphene.

A periodically driven system with spatial asymmetry can exhibit a directed motion facilitated by thermal or quantum fluctuations. This so-called ratchet effect has fascinating ramifications in engineering and natural sciences. Graphene is nominally a symmetric system. Driven by a periodic electric field, no directed electric current should flow. However, if the graphene has lost its spatial symmetry due to its substrate or adatoms, an electronic ratchet motion can arise. We report an experimental demonstration of such an electronic ratchet in graphene layers, proving the underlying spatial asymmetry. The orbital asymmetry of the Dirac fermions is induced by an in-plane magnetic field, whereas the periodic driving comes from terahertz radiation. The resulting magnetic quantum ratchet transforms the a.c. power into a d.c. current, extracting work from the out-of-equilibrium electrons driven by undirected periodic forces. The observation of ratchet transport in this purest possible two-dimensional system indicates that the orbital effects may appear and be substantial in other two-dimensional crystals such as boron nitride, molybdenum dichalcogenides and related heterostructures. The measurable orbital effects in the presence of an in-plane magnetic field provide strong evidence for the existence of structure inversion asymmetry in graphene.

Fully gapped superconductivity in a nanometre-size YBa2Cu3O(7-δ) island enhanced by a magnetic field.

The symmetry of Cooper pairs is central to constructing a superconducting state. The demonstration of a d(x²-y²)-wave order parameter with nodes represented a breakthrough for high critical temperature superconductors (HTSs). However, despite this fundamental discovery, the origin of superconductivity remains elusive, raising the question of whether something is missing from the global picture. Deviations from d(x²-y²)-wave symmetry, such as an imaginary admixture d(x²-y²)+ is (or id(xy)), predict a ground state with unconventional properties exhibiting a full superconducting gap and time reversal symmetry breaking. The existence of such a state, until now highly controversial, can be proved by highly sensitive measurements of the excitation spectrum. Here, we present a spectroscopic technique based on an HTS nanoscale device that allows an unprecedented energy resolution thanks to Coulomb blockade effects, a regime practically inaccessible in these materials previously. We find that the energy required to add an extra electron depends on the parity (odd/even) of the excess electrons on the island and increases with magnetic field. This is inconsistent with a pure d(x²-y²)-wave symmetry and demonstrates a complex order parameter component that needs to be incorporated into any theoretical model of HTS.

Terahertz radiation driven chiral edge currents in graphene.

We observe photocurrents induced in single-layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left to right handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory based on Boltzmann's kinetic equation is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.

Dynamic Hall effect driven by circularly polarized light in a graphene layer.

We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates--under oblique incidence--an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed E and B fields which are, however rotating with the light's frequency.

Spontaneous shape distortion in quench-condensed bismuth clusters below 8 K.

We study single-electron transport in quench-condensed bismuth films. By lateral confinement, we select a specific cluster of about 10(3) atoms and use tunneling barriers that appear naturally during thin-film formation. A remarkable reversible increase of the sample conductance up to 5 times was found as the temperature was lowered from 11 to 4 K. We attribute this effect to a spontaneous distortion of the cluster shape and discuss its relation to a phase transition predicted for free metallic clusters.