First principles study of electronic structure and thermoelectric transport in tin selenide and phase separated tin selenide-copper selenide alloy.

The electronic structure and thermoelectric transport in SnSe and its alloy with Cu2Se have been studied using the first principles technique and semi classical Boltzmann transport theory. Our study reveals that SnSe is p-type with indirect band gap of 0.66 eV, while the alloy is phase separated and n-type with negligible indirect band gap of 0.064 eV. In both cases, two fold degeneracy in band extrema have been observed within the range of 25 meV. Delocalization of Se lone pair has been observed due to Cu substitution in Sn sites, which is supposed to lower its lattice thermal conductivity. A chemical potential map has been generated obeying thermodynamic restrictions to predict the possible existence of secondary phases. Our study shows the existence of SnSe2 as a secondary phase, while the possibility of Cu2Se as a secondary phase is negligible due to its higher formation energy. We calculated the transport coefficients as a function of carrier concentration and temperature to understand the range of optimized thermoelectric performance. The transport coefficients are similar along in plane direction whereas significant deviation is observed along the cross plane direction due to anisotropy in effective masses in SnSe. The effective masses are more isotropic in alloy than SnSe, thus transport properties show less anisotropy along three directions. Significant contribution of bipolar transport is observed in SnSe, while that is not noticed in the alloy. The behaviors of the Seebeck coefficients in both cases are discussed in terms of Mott's theory and density of states modification near Fermi energy. Electron mobilities limited by acoustic phonon, ionized impurities, alloy scattering and inter carrier scattering have been examined relying on deformation potential approach and effective mass theory. The results indicate that acoustic phonon scattering is dominant scattering mechanism in SnSe over inter carrier scattering, whereas for the alloy the former contribute very weakly. Ionized impurity scattering and inter carrier scattering are most dominant in the alloy. Alloy scattering with U = 2 eV also contribute significantly.

A Promising Proton Conducting Electrolyte BaZr1-xHoxO3-δ (0.05 ≤ x ≤ 0.20) Ceramics for Intermediate Temperature Solid Oxide Fuel Cells.

In this study, the Ho-substituted BaZrO3 electrolyte ceramics (BaZr1-xHoxO3-δ, 0.05 ≤ x ≤ 0.20) were synthesized through a low-cost flash pyrolysis process followed by conventional sintering. The effects of Ho-substitution in BaZrO3 studied in terms of the structural phase relationship, microstructure and electrical conductivity to substantiate augmented total electrical conductivity for intermediate temperature solid oxide fuel cells (IT-SOFCs). The Rietveld refined X-ray diffraction (XRD) patterns revealed that pure phase with [Formula: see text] space group symmetry of cubic crystal system as originated in all samples sintered at 1600 °C for 8 h. The Raman spectroscopic investigations also approved that Ho incorporation in BaZrO3 ceramics. Field Emission Scanning Microscopic (FESEM) study informed a mixture of fine and coarse grains in the fracture surface of Ho-substituted BaZrO3 sintered samples. The relative density and average grain size of samples were observed to decrease as per the addition of Ho-substitution in BaZrO3 ceramics. The electrical conductivity study was accomplished by Electrical Impedance Spectroscopy (EIS) under 3% humidified O2 atmosphere from 300 to 800 °C. Furthermore, the total electrical conductivity of BaZr0.8Ho0.2O3-δ ceramic was found to be 5.8 × 10-3 S-cm-1 at 600 °C under 3% humidified atmosphere, which may be a promising electrolyte for IT-SOFCs.

Nanoporous Ca3Co4O9 Thin Films for Transferable Thermoelectrics.

The development of high-performance and transferable thin-film thermoelectric materials is important for low-power applications, e.g., to power wearable electronics, and for on-chip cooling. Nanoporous films offer an opportunity to improve thermoelectric performance by selectively scattering phonons without affecting electronic transport. Here, we report the growth of nanoporous Ca3Co4O9 thin films by a sequential sputtering-annealing method. Ca3Co4O9 is promising for its high Seebeck coefficient and good electrical conductivity and important for its nontoxicity, low cost, and abundance of its constituent raw materials. To grow nanoporous films, multilayered CaO/CoO films were deposited on sapphire and mica substrates by rf-magnetron reactive sputtering from elemental Ca and Co targets, followed by annealing at 700 °C to form the final phase of Ca3Co4O9. This phase transformation is accompanied by a volume contraction causing formation of nanopores in the film. The thermoelectric propoperties of the nanoporous Ca3Co4O9 films can be altered by controlling the porosity. The lowest electrical resistivity is ∼7 mΩ cm, yielding a power factor of 2.32 × 10-4 Wm-1K-2 near room temperature. Furthermore, the films are transferable from the primary mica substrates to other arbitrary polymer platforms by simple dry transfer, which opens an opportunity of low-temperature use these materials.