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1.
Nat Mater ; 9(10): 803-5, 2010 Oct.
Article in English | MEDLINE | ID: mdl-20657588

ABSTRACT

Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates for spin electronic applications using the magnetoelectric effect, which couples magnetism and ferroelectricity. Furthermore, because ferroelectrics are insulators with a reasonable bandgap, photons can efficiently interact with electrons leading to photoconduction or photovoltaic effects. However, until now, coupling of light with mechanical degrees of freedom has been elusive, although ferroelasticity is a well-known property of these materials. Here, we report on the observation, for the first time, of a substantial visible-light-induced change in the dimensions of BiFeO(3) crystals at room temperature. The relative light-induced photostrictive effect is of the order of 10(-5) with response times below 0.1 s. It depends on the polarization of incident light as well as applied magnetic fields. This opens the perspective of combining mechanical, magnetic, electric and optical functionalities in future generations of remote switchable devices.

2.
Opt Lett ; 31(15): 2284-6, 2006 Aug 01.
Article in English | MEDLINE | ID: mdl-16832460

ABSTRACT

We demonstrate all-optical switching in an active two-dimensional photonic crystal waveguide, observing as large as 16 nm blueshifts of a leaky eigenmode at 839 nm and switching ratios of almost 70%. These results are larger than those previously observed in similar experiments performed on passive photonic crystal waveguides; the enhancement is due to resonant photogeneration of carriers by In(0.12)Al(0.2)Ga(0.68)As quantum wells in the core of the waveguide. The effective change in the refractive index of the structure is approximately10(-2), with a rise time of approximately1 ps and a decay time of approximately10 ps, potentially allowing high-speed switching and fast modulation rates.

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