ABSTRACT
Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.
Subject(s)
Models, Chemical , Nanotechnology/methods , Quantum Dots , Silicon/chemistry , Silicon/radiation effects , Light , Materials TestingABSTRACT
By means of ultraviolet-induced (254nm) RNA-protein cross-links it is shown, that tRNAfMet inside the preinitiation complex, formed by binding of fMet-tRNAfMet with 30S subunit of E. coli ribosome and RNA of the phage MS2 in the presence of initiation factors, directly interacts with proteins S4, S5, S9, S11, S14 and S15-S17.
